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BS170-D26Z

Onsemi

BS170-D26Z by Onsemi

BS170-D26Z by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.5A Drain Current, 0.83W Power Dissipation, and 5 ohm On Resistance. With a max operating temperature of 150°C, this ENHANCEMENT MODE transistor in CYLINDRICAL package is suitable for various electronic circuits.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 22,289 parts In-Stock

1+ parts

$0.590

100+ parts

$0.231

1k+ parts

$0.174

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22,289

$0.590

$0.231

$0.174

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Newark

USA . 2,032 parts In-Stock

1+ parts

$0.608

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$0.238

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$0.161

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2,032

$0.608

$0.238

$0.161

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Element14

Singapore . 2,258 parts In-Stock

1+ parts

$0.737

100+ parts

$0.206

1k+ parts

$0.157

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$0.106

2,258

$0.737

$0.206

$0.157

$0.106

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$1.915

100+ parts

$1.819

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$1.819

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1,000

$1.915

$1.819

$1.819

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Rochester

USA . 100,646 parts In-Stock

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$0.118

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$0.098

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$0.087

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$0.098

$0.087

DigiKey

USA . 100,646 parts In-Stock

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$0.150

100,646

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Verical

USA . 18,000 parts In-Stock

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Master Electronics

USA . 18,000 parts In-Stock

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Arrow

USA . 12,000 parts In-Stock

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$0.092

12,000

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$0.092

Chip1Stop

Japan . 8,000 parts In-Stock

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$0.093

8,000

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RS (Exports)

UK . 2,650 parts In-Stock

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$0.256

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$0.188

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2,650

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$0.188

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Distributors (In-Stock)

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Digiode

USA . 1,176 parts In-Stock

1+ parts

$0.087

100+ parts

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1,176

$0.087

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IBS Electronics

USA . 91,478 parts In-Stock

1+ parts

$0.115

100+ parts

$0.105

1k+ parts

$0.144

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$0.140

91,478

$0.115

$0.105

$0.144

$0.140

Nova Conductors

Japan . 700 parts In-Stock

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$0.130

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700

$0.130

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TME

Poland . 1,963 parts In-Stock

1+ parts

$0.530

100+ parts

$0.227

1k+ parts

$0.145

10k+ parts

$0.110

1,963

$0.530

$0.227

$0.145

$0.110

DigiKey Marketplace

USA . 152,646 parts In-Stock

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$0.100

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Flip Electronics

USA . 48,000 parts In-Stock

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Vyrian

USA . 42,306 parts In-Stock

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Electro Sonic

Canada . 30,000 parts In-Stock

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$0.090

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$0.090

NAC Semi

USA . 24,000 parts In-Stock

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$0.229

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VNN

France . 6,529 parts In-Stock

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6,529

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Schukat

Germany . 6,500 parts In-Stock

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$0.180

1k+ parts

$0.135

10k+ parts

$0.107

6,500

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$0.180

$0.135

$0.107

Chip Stock

USA . 4,870 parts In-Stock

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Micros

Poland . 3,770 parts In-Stock

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$0.144

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$0.139

3,770

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$0.139

Partservice

France . 3,720 parts In-Stock

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$0.139

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$0.134

3,720

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$0.134

Micros sp.j. W. Kędra i J. Lic

Poland . 3,720 parts In-Stock

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$0.149

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$0.144

3,720

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$0.144

Semtec, LLC

USA . 800 parts In-Stock

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800

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Anansix

USA . 724 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 203 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 129,036 parts In-Stock

1+ parts

$0.066

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129,036

$0.066

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Semicontronic

India . 85,961 parts In-Stock

1+ parts

$0.066

100+ parts

$0.064

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$0.064

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85,961

$0.066

$0.064

$0.064

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Corphita

USA . 2,485 parts In-Stock

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$0.083

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Continental Prestige Electronics

USA . 8,101 parts In-Stock

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$0.127

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$0.124

8,101

$0.127

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$0.124

Argo Parts USA

USA . 4,341 parts In-Stock

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$0.127

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$0.123

4,341

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Netroflash

USA . 2,050 parts In-Stock

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$0.130

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2,050

$0.130

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Corohmni

South Africa . 66 parts In-Stock

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$0.963

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66

$0.963

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Aztec Data Supply Inc.

USA . 2,841 parts In-Stock

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$1.801

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2,841

$1.801

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Advanced Electronics

New Zealand . 10,000 parts In-Stock

1+ parts

$2.052

100+ parts

$1.867

1k+ parts

$1.683

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10,000

$2.052

$1.867

$1.683

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RC Electronics

USA . 75,532 parts In-Stock

1+ parts

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$0.130

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$0.120

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$0.120

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$0.120

Perfect Parts

USA . 20,204 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Lixinc

USA . 9,045 parts In-Stock

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SupplyDigital Components

Austria . 8,253 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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Kulean Microsystems

USA . 7,271 parts In-Stock

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iodParts Technologies Inc.

India . 6,850 parts In-Stock

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Problanco Electronics

Mexico . 6,627 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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TANS Electronics

Latvia . 3,599 parts In-Stock

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Kepictronics

USA . 2,400 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,106 parts In-Stock

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Supply Digital

USA . 1,455 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,404 parts In-Stock

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Modulus Dynamics

Lithuania . 927 parts In-Stock

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Robosynatics

Brazil . 350 parts In-Stock

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$8.295

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$8.295

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$8.295

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$8.295

Lucentia Tech

USA . 350 parts In-Stock

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$8.295

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$8.295

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$8.295

350

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$8.295

$8.295

$8.295

UHIMA Technologies

Türkiye . 24 parts In-Stock

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Overview

Enhance your electronic projects with the BS170-D26Z Small Signal Field Effect Transistor by Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance that you can trust. Ideal for switching applications, this N-CHANNEL transistor offers a convenient single configuration with a built-in diode. With a 60V breakdown voltage and maximum drain current of 0.5A, this transistor provides efficient power management in a compact cylindrical package. Elevate your designs with the value and benefits of the BS170-D26Z, perfect for a wide range of applications where precision and durability are essential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of environments and applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics than P-channel FETs, making this transistor a reliable choice for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide additional protection against reverse voltage conditions, enhancing the functionality of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in control circuits.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages without risk of damage or malfunction, increasing its versatility in various applications.

Maximum Drain Current (Abs) (ID): 0.5 A

The high maximum drain current rating allows for reliable operation in circuits requiring higher current levels, making this transistor suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 0.83 W

The high power dissipation rating ensures that the transistor can handle significant heat dissipation, improving its overall reliability and longevity in operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for high-temperature environments and applications.

Maximum Drain-Source On Resistance: 5 ohm

The low drain-source on resistance results in minimal power loss and heat generation, enhancing the efficiency and performance of the transistor in switching applications.

Maximum Feedback Capacitance (Crss): 10 pF

The low feedback capacitance reduces the risk of signal distortion and improves the stability of the transistor in high-frequency applications, making it an ideal choice for fast-switching circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BS170-D26Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.5 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BS170-D26Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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