Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Vishay Intertechnology's SI9926CDY-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 8A max drain current, and 0.018 ohm max drain-source resistance. With a small outline package style and operating up to 150°C, it suits various electronic designs.
Median Price
$0.775
Lifecycle Status
Suppliers In-Stock
23
In-Stock Inventory
1k+
Chip1Stop
1+ parts
$1.850
100+ parts
$0.794
1k+ parts
$0.569
10k+ parts
$0.554
DigiKey
$1.990
$0.852
$0.675
-
Mouser Electronics
$0.849
$0.598
$0.547
TTI Europe
$0.370
Arrow
$0.428
Element14
$0.683
$0.534
Farnell
$0.585
$0.384
TTI
Verical
$0.498
Newark
$0.934
$0.660
Nova Conductors
$0.855
Component Electronics Inc.
$1.150
$0.870
$0.750
Bristol Electronics
$1.238
$0.458
$0.322
TME
$1.870
$0.816
$0.575
$0.474
ComSIT Distribution GmbH
NAC Semi
$1.370
IBS Electronics
$1.073
Vyrian
Dan-Mar Components
Component Sense
Q Components
North Shore Components
Prism Electronics
Semicontronic
$0.281
$0.274
$0.273
Ampacity Inc.
Argo Parts USA
$0.493
$0.478
Advanced Electronics
$0.622
Modulus Dynamics
$0.677
$0.670
$0.650
Aranea Global
$0.838
$0.804
Continental Prestige Electronics
$0.972
$0.446
Corohmni
$1.226
Aztec Data Supply Inc.
$1.610
S.R.D Solutions
iodParts Technologies Inc.
Authorized Procurement Solutions
Robosynatics
Lucentia Tech
$6.849
Futuretech Components
This material is durable and provides good protection to the internal components of the transistor.
N-channel FETs typically have better performance and efficiency compared to P-channel FETs.
Designed specifically for switching applications, ensuring optimal performance in such scenarios.
Provides a safety margin for voltage spikes and ensures the transistor can handle higher voltages.
High drain current rating allows for handling larger currents without overheating or damage.
With a high power dissipation capability, this FET can handle power effectively without getting damaged.
Capable of operating at high temperatures, making it suitable for a wide range of applications.
Low on-resistance leads to lower power losses and higher efficiency in the circuit.
Small Signal Field Effect Transistors (FET) SI9926CDY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SI9926CDY-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - New Solder Plating Site 18/Apr/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
SS14
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Onsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
1N4148
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MMSZ5245BT1G
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
Semitron
RECTIFIER DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Maximum Reverse Recovery Time: .004 us;
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW04020000Z0EDHP
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
Bytesonic Electronics
EU2B-YS3103F
Idec
ROTARY SWITCH;
2N7002
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
L2N7002LT1G
Leshan Radio
Leshan Radio's L2N7002LT1G is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.115A ID. Ideal for small signal applications, it features a built-in diode, GULL WING terminals, and operates in enhancement mode. With a max power dissipation of 0.3W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
ZXMP6A13FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; No. of Terminals: 3; Minimum DS Breakdown Voltage: 60 V;
IRF7820TRPBF
Infineon Technologies
IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.
2N7000
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;
2N7000BU
2N7000BU by Onsemi is a N-CHANNEL FET with max drain current of 0.2A and power dissipation of 0.4W. Ideal for low-power applications, it operates at up to 150°C temp, featuring metal-oxide semiconductor tech. Suitable for single configuration circuits requiring efficient switching capabilities.
FDN339AN
Onsemi's FDN339AN is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3A Drain Current, 0.035 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body, it's designed for surface mount in small outline packages.
BSS84AK,215
NXP Semiconductors' BSS84AK,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.18A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.14W.
LND150N3-GP013
Microchip Technology
LND150N3-GP013 by Microchip is a N-CHANNEL FET with 500V DS breakdown voltage, 0.03A ID, and 1000 ohm RDS(on). Ideal for switching applications, it operates in depletion mode with a max temp of 150°C. The transistor features a built-in diode and has a package style of cylindrical.
SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 40V breakdown voltage and 4.4A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.5W. The small outline package and -55 to 150°C operating temperature range make it suitable for various electronic designs.
BSS314PEH6327XTSA1
BSS314PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.5A ID. It features SINGLE configuration with built-in diode, 0.14 ohm RDS(on), and 11pF Crss. Ideal for applications requiring small signal amplification in compact electronic devices due to its ENHANCEMENT MODE operation and GULL WING terminals.
LND150N3-GP005
LND150N3-GP005 by Microchip is a N-CHANNEL FET with 0.03A ID and 1000Ω RDS(on). Ideal for switching applications, it operates in depletion mode with built-in diode. Featuring 3 terminals, cylindrical package style, and 1pF Crss, it is designed for efficient performance in various electronic circuits.
NDS331N
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Application: SWITCHING;
2N7002BKV,115
NXP Semiconductors' 2N7002BKV,115 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.34A Drain Current, and 1.6 ohm On Resistance. With a max temp of 150°C, it's ideal for small outline packages in ENHANCEMENT MODE circuits.
BSS83PL6327
BSS83PL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.33A ID, and 2 ohm RDS(on). Ideal for small signal applications in electronics due to its compact size, ENHANCEMENT MODE operation, and low feedback capacitance of 9pF. Suitable for surface mount designs with GULL WING terminals.
FDN327N
FDN327N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.07 ohm On Resistance and can handle up to 0.46W power dissipation at 150°C.
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
FDC602P
The Onsemi FDC602P is a P-CHANNEL FET with 20V DS Breakdown Voltage, 5.5A ID, and 0.033 ohm RDS. Ideal for SWITCHING applications in small outline packages with -55 to 150 °C operating range.
MMBF170LT3
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
FDG8850NZ
FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
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SI9945BDY-T1-GE3
Vishay Intertechnology's SI9945BDY-T1-GE3 is a N-channel FET with 60V DS breakdown voltage and 5.3A max drain current, ideal for switching applications. It features separate elements with built-in diode in a small outline package, operating in enhancement mode at up to 150°C. Suitable for surface mount assembly with gull wing terminals and matte tin finish.
SI9953DY
Vishay Siliconix
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 2.3 A; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN LEAD;
Temic Semiconductors
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 2 W; Terminal Position: DUAL; Maximum Drain Current (ID): 2.3 A;
SI9933CDY-T1-GE3
SI9933CDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
SI9926CDY-T1-E3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Terminal Finish: Matte Tin (Sn) - annealed; Package Body Material: PLASTIC/EPOXY;
SI9953DY-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); JESD-30 Code: R-PDSO-G8; Transistor Element Material: SILICON;
SI9953DY-T1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI9953DY-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 20 V; Terminal Position: DUAL;
SI9933CDY-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Terminal Finish: PURE MATTE TIN; Maximum Operating Temperature: 150 Cel;
SI9925DY/T3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE; No. of Elements: 2;
SI9926ADY
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 8; JESD-30 Code: R-PDSO-G8;
SI9926ADY-E3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; No. of Terminals: 8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI9926BDY-E3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 8; Operating Mode: ENHANCEMENT MODE;
Supply Digital Components
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