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SIS443DN-T1-GE3

Vishay Intertechnology

SIS443DN-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SIS443DN-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With -55 to 150 °C operating temperature range, this transistor has 0.035A ID and 0.0117 ohm Drain-Source On Resistance.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 19,948 parts In-Stock

1+ parts

$1.420

100+ parts

$0.784

1k+ parts

$0.708

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19,948

$1.420

$0.784

$0.708

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Element14

Singapore . 52,184 parts In-Stock

1+ parts

$1.661

100+ parts

$1.060

1k+ parts

$0.679

10k+ parts

$0.624

52,184

$1.661

$1.060

$0.679

$0.624

Mouser Electronics

USA . 11,833 parts In-Stock

1+ parts

$2.290

100+ parts

$0.992

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$0.725

10k+ parts

$0.667

11,833

$2.290

$0.992

$0.725

$0.667

Newark

USA . 5,080 parts In-Stock

1+ parts

$2.520

100+ parts

$1.220

1k+ parts

$0.954

10k+ parts

-

5,080

$2.520

$1.220

$0.954

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TTI Europe

Germany . 18,000 parts In-Stock

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$0.499

18,000

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$0.499

Arrow

USA . 6,000 parts In-Stock

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$0.816

6,000

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$0.816

TTI

USA . 6,000 parts In-Stock

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$0.643

6,000

-

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$0.643

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.654

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$0.654

Verical

USA . 951 parts In-Stock

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$1.000

1k+ parts

$0.824

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951

-

$1.000

$0.824

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.941

100+ parts

-

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50

$0.941

-

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TME

Poland . 951 parts In-Stock

1+ parts

$2.160

100+ parts

$0.960

1k+ parts

$0.720

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951

$2.160

$0.960

$0.720

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Chip Stock

USA . 73,340 parts In-Stock

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73,340

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Vyrian

USA . 24,683 parts In-Stock

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24,683

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Rutronik

Germany . 6,000 parts In-Stock

1+ parts

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$0.592

6,000

-

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$0.592

ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

1+ parts

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6,000

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.773

6,000

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$0.773

Speed Components Ltd

Israel . 2,515 parts In-Stock

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2,515

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Sensible Micro Corp

USA . 2,390 parts In-Stock

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2,390

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Bristol Electronics

USA . 678 parts In-Stock

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678

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ComSIT Distribution GmbH

Germany . 52 parts In-Stock

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Holdelec - ElecDif-Pro

France . 35 parts In-Stock

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35

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 25,562 parts In-Stock

1+ parts

$0.424

100+ parts

-

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25,562

$0.424

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Semicontronic

India . 23,024 parts In-Stock

1+ parts

$0.424

100+ parts

$0.413

1k+ parts

$0.411

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23,024

$0.424

$0.413

$0.411

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Aztec Data Supply Inc.

USA . 4,878 parts In-Stock

1+ parts

$0.650

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4,878

$0.650

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Corohmni

South Africa . 278 parts In-Stock

1+ parts

$0.919

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278

$0.919

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.922

100+ parts

-

1k+ parts

$0.885

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50

$0.922

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$0.885

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Argo Parts USA

USA . 3,562 parts In-Stock

1+ parts

$0.941

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3,562

$0.941

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Modulus Dynamics

Lithuania . 71 parts In-Stock

1+ parts

$1.045

100+ parts

$1.034

1k+ parts

$1.003

10k+ parts

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71

$1.045

$1.034

$1.003

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Continental Prestige Electronics

USA . 50,708 parts In-Stock

1+ parts

$1.600

100+ parts

$0.962

1k+ parts

$0.636

10k+ parts

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50,708

$1.600

$0.962

$0.636

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.922

100+ parts

$1.826

1k+ parts

$1.826

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3,000

$1.922

$1.826

$1.826

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Microchip USA

USA . 5,890 parts In-Stock

1+ parts

$4.395

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5,890

$4.395

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CoreStaff

Japan . 2,910 parts In-Stock

1+ parts

$6.786

100+ parts

$1.081

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2,910

$6.786

$1.081

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Metaverse IC Inc.

Canada . 142,300 parts In-Stock

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142,300

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RC Electronics

USA . 38,971 parts In-Stock

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38,971

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QUARKTWIN TECHNOLOGY LTD

USA . 29,796 parts In-Stock

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Perfect Parts

USA . 13,472 parts In-Stock

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13,472

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Robosynatics

Brazil . 12,371 parts In-Stock

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12,371

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Lucentia Tech

USA . 12,371 parts In-Stock

1+ parts

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$0.373

1k+ parts

$0.366

10k+ parts

$0.366

12,371

-

$0.373

$0.366

$0.366

Eastek

USA . 9,000 parts In-Stock

1+ parts

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$0.880

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9,000

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$0.880

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Infinite Electronics LLP (Excess)

. 6,206 parts In-Stock

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6,206

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Cyclops Electronics Ltd (Excess)

UK . 6,000 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 14 parts In-Stock

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14

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Overview

Unlock the full potential of your electronic devices with the Vishay Intertechnology SIS443DN-T1-GE3 P-Channel Small Signal Field Effect Transistor. Crafted with precision and expertise, this versatile component is perfect for switching applications, offering enhanced performance and reliability. Say goodbye to compromised functionality and experience seamless operation with the built-in diode feature. Trust in Vishay's legacy of quality and innovation, and elevate your projects to new heights with this high-performance transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components from damage, making the product long-lasting.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are preferred, offering compatibility for specific circuit requirements.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a built-in diode, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it ideal for applications that require quick on/off transitions.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 40 V

Provides a high breakdown voltage, ensuring reliable performance in demanding voltage conditions.

Package Shape: SQUARE

Offers a compact form factor, suitable for applications where space-saving is essential.

Terminal Form: C BEND

Facilitates easy soldering and connection to other components, ensuring a stable electrical connection.

Operating Mode: ENHANCEMENT MODE

Allows for enhanced control over the transistor's operation, offering flexibility in various circuit configurations.

No. of Terminals: 5

Provides multiple connection points for added versatility in circuit design and integration.

Package Style (Meter): SMALL OUTLINE

Offers a streamlined design that saves space on PCBs and enhances the overall aesthetic of the product.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers efficient performance and low power consumption, making it suitable for battery-operated devices.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliable performance in challenging environmental conditions.

Transistor Element Material: SILICON

Provides good thermal stability and high conductivity, contributing to the overall reliability and efficiency of the product.

Minimum Operating Temperature: -55 °C

Suitable for use in extreme cold environments, ensuring operation in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Enhances the solderability of the terminals and ensures a secure electrical connection for improved performance.

Maximum Drain Current (ID): 0.035 A

Offers a high drain current capacity, suitable for applications requiring robust power handling capabilities.

Maximum Drain-Source On Resistance: 0.0117 ohm

Provides low on-resistance, minimizing power loss and heat generation during operation for efficient performance.

Terminal Position: DUAL

Allows for versatile mounting options and simplifies circuit layouts, offering flexibility in design and integration.

Case Connection: DRAIN

Enables easy connection to the drain terminal, ensuring a secure and stable electrical connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for a specified duration, ensuring reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures, making it suitable for lead-free soldering processes and ensuring proper solder joints.

Technical Specifications

Small Signal Field Effect Transistors (FET) SIS443DN-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

.035 A

Maximum Drain-Source On Resistance:

.0117 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-C5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIS443DN-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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