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SI9933CDY-T1-E3

Vishay Intertechnology

SI9933CDY-T1-E3 by Vishay Intertechnology

Vishay Intertechnology's SI9933CDY-T1-E3 is a P-CHANNEL FET with 2 elements and built-in diode for switching applications. Features include 20V DS breakdown voltage, 4A max drain current, and 0.058 ohm max on resistance. Ideal for enhancement mode operation in small outline packages at temperatures ranging from -50 to 150°C.

Median Price

$0.334

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 117 parts In-Stock

1+ parts

$0.079

100+ parts

$0.079

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$0.079

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117

$0.079

$0.079

$0.079

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Arrow

USA . 563 parts In-Stock

1+ parts

$0.334

100+ parts

$0.139

1k+ parts

$0.097

10k+ parts

-

563

$0.334

$0.139

$0.097

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Mouser Electronics

USA . 27,174 parts In-Stock

1+ parts

$0.890

100+ parts

$0.312

1k+ parts

$0.229

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-

27,174

$0.890

$0.312

$0.229

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DigiKey

USA . 4,644 parts In-Stock

1+ parts

$1.000

100+ parts

$0.406

1k+ parts

$0.283

10k+ parts

$0.220

4,644

$1.000

$0.406

$0.283

$0.220

Farnell

UK . 2,437 parts In-Stock

1+ parts

-

100+ parts

$0.254

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$0.209

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2,437

-

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Element14

Singapore . 2,437 parts In-Stock

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$0.356

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$0.334

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2,437

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$0.334

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Chip1Stop

Japan . 985 parts In-Stock

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985

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Verical

USA . 563 parts In-Stock

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-

100+ parts

$0.139

1k+ parts

$0.097

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563

-

$0.139

$0.097

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 40,822 parts In-Stock

1+ parts

$0.079

100+ parts

-

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40,822

$0.079

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-

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Martec Srl

Italy . 991 parts In-Stock

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991

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ComSIT Distribution GmbH

Germany . 743 parts In-Stock

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743

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Nova Conductors

Japan . 33 parts In-Stock

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LWI Electronics Inc

India . 8 parts In-Stock

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8

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,194 parts In-Stock

1+ parts

$0.067

100+ parts

-

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7,194

$0.067

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Component Stockers USA

USA . 43,297 parts In-Stock

1+ parts

$0.080

100+ parts

$0.080

1k+ parts

$0.240

10k+ parts

$0.190

43,297

$0.080

$0.080

$0.240

$0.190

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.936

100+ parts

$0.852

1k+ parts

$0.768

10k+ parts

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600

$0.936

$0.852

$0.768

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Corohmni

South Africa . 757 parts In-Stock

1+ parts

$1.885

100+ parts

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757

$1.885

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Netroflash

USA . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 1,586 parts In-Stock

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$0.302

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$0.195

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1,586

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$0.302

$0.195

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Argo Parts USA

USA . 1,465 parts In-Stock

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1,465

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Overview

Unleash the power of cutting-edge technology with the SI9933CDY-T1-E3 by Vishay Intertechnology. As a leader in the industry, Vishay Intertechnology delivers top-quality small signal field effect transistors that are perfect for a wide range of switching applications. Offering enhanced performance and reliability, this P-channel transistor features a unique configuration with built-in diodes for added functionality. With a maximum drain current of 4A and a low on-resistance of 0.058 ohm, the SI9933CDY-T1-E3 ensures efficient operation at all times. Experience the difference with Vishay Intertechnology and elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Optimal for applications where P-channel transistors are required, allowing for efficient performance.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers versatility and flexibility in circuit design, with built-in diode enhancing functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing high performance in such tasks.

Surface Mount: YES

Enables easy and convenient installation on PCBs, reducing assembly time and effort.

Minimum DS Breakdown Voltage: 20 V

Withstands voltage spikes and surges, ensuring reliability in various operating conditions.

Package Shape: RECTANGULAR

Compact design that saves space on the PCB and allows for efficient layout.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for improved performance and efficiency in signal amplification.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance.

Maximum Power Dissipation (Abs): 3.1 W

Handles power dissipation effectively, preventing overheating and damage to the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI9933CDY-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

.058 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI9933CDY-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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