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NDS7002A/D87Z

National Semiconductor

NDS7002A/D87Z by National Semiconductor

NDS7002A/D87Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features GULL WING terminals in PLASTIC/EPOXY package style.

Median Price

$66.950

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Adafruit Industries

USA . 2,500 parts In-Stock

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$63.603

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Digiode

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Vyrian

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Component Stockers USA

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Overview

Enhance your electronic projects with the NDS7002A/D87Z by National Semiconductor. This small signal field-effect transistor offers high-quality performance in switching applications, thanks to its N-channel configuration and built-in diode. With a maximum power dissipation of 0.3W and a minimum DS breakdown voltage of 60V, this transistor provides reliable operation even in demanding conditions. Whether you're a hobbyist or a professional, the NDS7002A/D87Z delivers value and efficiency that will take your projects to the next level. Trust National Semiconductor for top-notch components that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds compared to P-channel transistors, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and helps protect against voltage spikes and reverse currents.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount design allows for easy and compact integration onto circuit boards, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle high voltages and provide a reliable switching capability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off and require a positive voltage at the gate to turn on, offering better control and efficiency in switching applications.

Maximum Power Dissipation (Abs): 0.3 W

The low power dissipation of 0.3W helps in maintaining lower operating temperatures and improving overall efficiency.

Maximum Drain Current (ID): 0.28 A

With a maximum drain current of 0.28A, this transistor can handle moderate current loads in switching applications.

Maximum Drain-Source On Resistance: 2 ohm

Having a low on-resistance of 2 ohms minimizes power losses and improves the efficiency of the switching circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS7002A/D87Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from National Semiconductor

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.28 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS7002A/D87Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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