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TN2404K-T1-E3

Vishay Intertechnology

TN2404K-T1-E3 by Vishay Intertechnology

Vishay Intertechnology TN2404K-T1-E3 is a N-CHANNEL FET with 240V DS Breakdown Voltage, 0.2A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.

Median Price

$0.399

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 50,391 parts In-Stock

1+ parts

$0.256

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$0.256

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$0.256

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50,391

$0.256

$0.256

$0.256

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DigiKey

USA . 31,474 parts In-Stock

1+ parts

$1.390

100+ parts

$0.575

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$0.407

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31,474

$1.390

$0.575

$0.407

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Mouser Electronics

USA . 30,724 parts In-Stock

1+ parts

$1.390

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$0.576

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$0.408

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$0.334

30,724

$1.390

$0.576

$0.408

$0.334

Element14

Singapore . 54,090 parts In-Stock

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$1.790

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$1.790

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TTI Europe

Germany . 90,000 parts In-Stock

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$0.293

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Verical

USA . 50,391 parts In-Stock

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$0.399

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$0.322

50,391

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$0.322

Future Electronics

Canada . 36,000 parts In-Stock

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$0.320

36,000

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$0.320

TTI

USA . 5,880 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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$0.424

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$0.424

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.323

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$0.323

Distributors (In-Stock)

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DF Sales Co.

USA . 4,000 parts In-Stock

1+ parts

$0.250

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$0.250

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DF Sales Co.

USA . 4,000 parts In-Stock

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$0.250

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$0.250

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Greenchips

USA . 2,462 parts In-Stock

1+ parts

$0.337

100+ parts

$0.321

1k+ parts

$0.305

10k+ parts

$0.276

2,462

$0.337

$0.321

$0.305

$0.276

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.530

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100

$0.530

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IBS Electronics

USA . 336,000 parts In-Stock

1+ parts

$0.533

100+ parts

$0.505

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$0.351

336,000

$0.533

$0.505

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$0.351

Bristol Electronics

USA . 5,511 parts In-Stock

1+ parts

$0.750

100+ parts

$0.278

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$0.195

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5,511

$0.750

$0.278

$0.195

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Maritex

Poland . 781 parts In-Stock

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$0.833

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781

$0.833

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TME

Poland . 672 parts In-Stock

1+ parts

$1.300

100+ parts

$0.538

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$0.453

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672

$1.300

$0.538

$0.453

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Ozdisan Elektronik

Türkiye . 1,234 parts In-Stock

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$1.607

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Chip Stock

USA . 51,500 parts In-Stock

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NAC Semi

USA . 51,000 parts In-Stock

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Vyrian

USA . 38,563 parts In-Stock

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Next Level Components, LLC

USA . 7,070 parts In-Stock

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Rutronik

Germany . 6,000 parts In-Stock

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$0.450

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$0.450

Rebound Electronics

UK . 6,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

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Q Components

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NexGen Digital

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Distributors (Availability)

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Semicontronic

India . 37,469 parts In-Stock

1+ parts

$0.238

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$0.232

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$0.231

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37,469

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$0.231

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Ampacity Inc.

Singapore . 36,046 parts In-Stock

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$0.244

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36,046

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Argo Parts USA

USA . 4,143 parts In-Stock

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$0.514

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$0.499

4,143

$0.514

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$0.499

Continental Prestige Electronics

USA . 2,420 parts In-Stock

1+ parts

$0.514

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$0.504

2,420

$0.514

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$0.504

Modulus Dynamics

Lithuania . 9,553 parts In-Stock

1+ parts

$0.514

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$0.514

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9,553

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Corohmni

South Africa . 2 parts In-Stock

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$0.514

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2

$0.514

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.529

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$0.503

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$0.503

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50

$0.529

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$0.503

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Netroflash

USA . 1,000 parts In-Stock

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$0.530

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$0.519

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1,000

$0.530

$0.519

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Aztec Data Supply Inc.

USA . 3,929 parts In-Stock

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$0.540

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GreenTree Electronics

Israel . 102,000 parts In-Stock

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Glotronic Ltd.

UK . 45,900 parts In-Stock

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Robosynatics

Brazil . 20,512 parts In-Stock

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$0.504

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$0.493

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$0.493

20,512

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$0.504

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$0.493

Lucentia Tech

USA . 20,512 parts In-Stock

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$0.504

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$0.493

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$0.493

20,512

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$0.493

Kepictronics

USA . 1,616 parts In-Stock

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Authorized Procurement Solutions

USA . 1,239 parts In-Stock

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Overview

Elevate your electronic designs with the TN2404K-T1-E3 by Vishay Intertechnology. As a leader in small signal field effect transistors, Vishay Intertechnology delivers top-notch quality and reliability. This N-channel transistor with a built-in diode is perfect for switching applications, offering high performance and efficiency. With a minimum breakdown voltage of 240V and a maximum drain current of 0.2A, this enhancement mode transistor is designed to meet your needs. Trust Vishay Intertechnology for innovative solutions that bring value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for long-term use in various environments.

Polarity or Channel Type: N-CHANNEL

Enhances conductivity and efficiency in the transistor's operation, allowing for faster switching speeds.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for protection and efficient current flow, minimizing the need for external components in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and rapid transitions between on and off states.

Surface Mount: YES

Enables easy and secure installation on PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 240 V

Provides a high level of voltage tolerance, making the transistor suitable for applications where voltage spikes may occur.

Maximum Drain Current (Abs) (ID): 0.2 A

Capable of handling moderate current levels, suitable for low-power switching applications.

Maximum Power Dissipation (Abs): 0.36 W

Efficient power handling capability, ensuring stable performance without overheating.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, providing reliability in various conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced MOSFET technology for improved performance and energy efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) TN2404K-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.36 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN2404K-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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