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TN2404KL-TR1-E3

Vishay Intertechnology

TN2404KL-TR1-E3 by Vishay Intertechnology

Vishay Intertechnology TN2404KL-TR1-E3 is a N-channel FET with 240V DS breakdown voltage, 0.3A drain current, and 4 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.8W. Package style is small outline with matte tin finish and can withstand temperatures from -55 to 150 °C.

Median Price

$2.310

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 850 parts In-Stock

1+ parts

$2.310

100+ parts

$1.730

1k+ parts

$1.500

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850

$2.310

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$1.500

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Vyrian

USA . 37,553 parts In-Stock

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EMSNET

USA . 60 parts In-Stock

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60

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Inland Empire Components Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 76 parts In-Stock

1+ parts

$0.845

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76

$0.845

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Ampacity Inc.

Singapore . 1,466 parts In-Stock

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$53.050

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1,466

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Argo Parts USA

USA . 3,869 parts In-Stock

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3,869

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GreenTree Electronics

Israel . 3,500 parts In-Stock

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3,500

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Continental Prestige Electronics

USA . 3,476 parts In-Stock

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3,476

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your electronic designs with the TN2404KL-TR1-E3 Small Signal Field Effect Transistor by Vishay Intertechnology. Crafted with precision and quality, this N-CHANNEL transistor with built-in diode is perfect for switching applications. With a high DS breakdown voltage of 240V and low on-resistance, this transistor offers reliable performance in a compact package. Trust Vishay Intertechnology to deliver superior components for your projects, ensuring efficiency and durability every step of the way. Elevate your designs with the TN2404KL-TR1-E3 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: N-CHANNEL

N-Channel type allows for efficient switching applications, making this transistor suitable for use in various electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and enhances efficiency, making this transistor a cost-effective choice for switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers reliable performance and fast response times in electronic circuits.

Minimum DS Breakdown Voltage: 240 V

High breakdown voltage provides protection against voltage spikes, ensuring the longevity and reliability of the transistor in various operating conditions.

Package Shape: ROUND

Round shape is compact and space-saving, making it easier to integrate this transistor into electronic designs with limited space.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical connections, ensuring secure mounting and reliable performance in various applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control and modulation of the transistor, making it versatile and suitable for a wide range of circuit designs.

Maximum Drain Current (Abs) (ID): 0.3 A

High maximum drain current rating ensures that the transistor can handle high current loads without overheating or failing, making it reliable in demanding applications.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit connections and configurations, enabling versatile usage in electronic designs.

Maximum Power Dissipation (Abs): 0.8 W

High power dissipation rating allows the transistor to handle heat effectively, ensuring stable performance even in high-power applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs, making this transistor suitable for compact electronic designs and applications with limited board space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, ensuring optimal performance and long-term durability in electronic circuits.

Maximum Power Dissipation Ambient: 0.8 W

High power dissipation in ambient conditions allows the transistor to operate reliably in various environmental conditions without overheating or degrading performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature rating ensures that the transistor can withstand elevated temperatures, making it suitable for use in applications with thermal challenges.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor a durable and efficient choice for electronic applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature rating allows the transistor to function reliably in cold environments, making it suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures reliable connections, extending the lifespan of the transistor in various applications.

Maximum Drain Current (ID): 0.3 A

High maximum drain current rating allows the transistor to handle current spikes and surges, ensuring stable operation in demanding conditions.

Maximum Drain-Source On Resistance: 4 ohm

Low drain-source on resistance minimizes power loss and ensures efficient switching performance, making this transistor suitable for high-frequency applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy mounting and connections, simplifying the integration of this transistor into electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures fast and efficient soldering of the transistor on PCBs, reducing assembly time and improving manufacturing efficiency.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures that the transistor can withstand soldering processes without damage, ensuring reliable performance in manufacturing environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) TN2404KL-TR1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (Abs) (ID):

.3 A

Maximum Drain Current (ID):

.3 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TN2404KL-TR1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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