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FDG8850NZ

Onsemi

FDG8850NZ by Onsemi

FDG8850NZ by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a small outline package style and operating temp up to 150°C, it's suitable for various electronic devices.

Median Price

$0.230

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,331 parts In-Stock

1+ parts

$0.181

100+ parts

$0.170

1k+ parts

$0.154

10k+ parts

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3,331

$0.181

$0.170

$0.154

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Arrow

USA . 5,370 parts In-Stock

1+ parts

$0.534

100+ parts

$0.321

1k+ parts

$0.203

10k+ parts

$0.159

5,370

$0.534

$0.321

$0.203

$0.159

Mouser Electronics

USA . 64,803 parts In-Stock

1+ parts

$0.770

100+ parts

$0.335

1k+ parts

$0.228

10k+ parts

$0.209

64,803

$0.770

$0.335

$0.228

$0.209

Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$1.653

100+ parts

$1.570

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$1.570

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600

$1.653

$1.570

$1.570

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Future Electronics

Canada . 90,000 parts In-Stock

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$0.147

90,000

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$0.147

Chip1Stop

Japan . 51,000 parts In-Stock

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$0.163

51,000

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$0.163

Verical

USA . 6,000 parts In-Stock

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$0.204

6,000

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Farnell

UK . 99 parts In-Stock

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$0.230

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$0.181

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$0.165

99

-

$0.230

$0.181

$0.165

Element14

Singapore . 3 parts In-Stock

1+ parts

-

100+ parts

$0.658

1k+ parts

$0.534

10k+ parts

$0.484

3

-

$0.658

$0.534

$0.484

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,721 parts In-Stock

1+ parts

$0.172

100+ parts

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2,721

$0.172

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Nova Conductors

Japan . 10 parts In-Stock

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$0.232

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10

$0.232

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Chip Stock

USA . 183,500 parts In-Stock

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183,500

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Semtec, LLC

USA . 34,191 parts In-Stock

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Vyrian

USA . 28,241 parts In-Stock

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Cyclops Electronics Ltd

UK . 10,950 parts In-Stock

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Atlantic Semiconductor

USA . 3,399 parts In-Stock

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3,399

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Schukat

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.341

1k+ parts

$0.256

10k+ parts

$0.205

3,000

-

$0.341

$0.256

$0.205

Bristol Electronics

USA . 591 parts In-Stock

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591

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Microfarads

USA . 284 parts In-Stock

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284

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SPM Sales

USA . 56 parts In-Stock

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56

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Flip Electronics

USA . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 22,219 parts In-Stock

1+ parts

$0.125

100+ parts

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22,219

$0.125

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Semicontronic

India . 21,851 parts In-Stock

1+ parts

$0.125

100+ parts

$0.122

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$0.121

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21,851

$0.125

$0.122

$0.121

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Corohmni

South Africa . 83 parts In-Stock

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$0.147

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83

$0.147

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Corphita

USA . 458 parts In-Stock

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$0.163

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458

$0.163

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.227

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$0.218

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2,000

$0.227

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$0.218

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Continental Prestige Electronics

USA . 3,634 parts In-Stock

1+ parts

$0.232

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$0.227

3,634

$0.232

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$0.227

Argo Parts USA

USA . 2,236 parts In-Stock

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$0.232

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$0.225

2,236

$0.232

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$0.225

Component Stockers USA

USA . 88,095 parts In-Stock

1+ parts

$0.540

100+ parts

$0.320

1k+ parts

$0.190

10k+ parts

$0.150

88,095

$0.540

$0.320

$0.190

$0.150

Aztec Data Supply Inc.

USA . 2,445 parts In-Stock

1+ parts

$1.305

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2,445

$1.305

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.653

100+ parts

$1.570

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$1.570

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600

$1.653

$1.570

$1.570

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Perfect Parts

USA . 103,935 parts In-Stock

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103,935

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RC Electronics

USA . 80,079 parts In-Stock

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$0.240

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$0.220

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$0.210

80,079

-

$0.240

$0.220

$0.210

Kepictronics

USA . 30,911 parts In-Stock

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30,911

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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Futuretech Components

Singapore . 12,000 parts In-Stock

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Lixinc

USA . 11,381 parts In-Stock

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SupplyDigital Components

Austria . 7,870 parts In-Stock

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7,870

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Problanco Electronics

Mexico . 7,511 parts In-Stock

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Kulean Microsystems

USA . 6,249 parts In-Stock

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6,249

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Alle Elektronik GmbH

Germany . 5,046 parts In-Stock

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Supply Digital

USA . 1,917 parts In-Stock

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TANS Electronics

Latvia . 1,771 parts In-Stock

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1,771

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Robosynatics

Brazil . 1,614 parts In-Stock

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$0.984

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$0.964

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$0.964

1,614

-

$0.984

$0.964

$0.964

Lucentia Tech

USA . 1,614 parts In-Stock

1+ parts

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$0.984

1k+ parts

$0.964

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$0.964

1,614

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$0.984

$0.964

$0.964

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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A-Z Elektronik GmbH

Germany . 881 parts In-Stock

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881

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UHIMA Technologies

Türkiye . 812 parts In-Stock

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812

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Overview

Discover the FDG8850NZ by Onsemi, a top-quality N-CHANNEL Small Signal Field Effect Transistor designed for SWITCHING applications. With a maximum DS Breakdown Voltage of 30V and a maximum Drain Current of 0.75A, this transistor offers superior performance in a compact, RECTANGULAR package. Manufactured by Onsemi, a trusted leader in semiconductor technology, this FET delivers reliable operation and exceptional efficiency. Ideal for a wide range of electronic devices, the FDG8850NZ provides customers with value, reliability, and cutting-edge technology that meets their needs. Experience the advantages of Onsemi's innovative technology with the FDG8850NZ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistors, making them suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer high efficiency and faster switching speeds compared to P-channel transistors, making them ideal for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and built-in diode allows for versatile circuit design and improved performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, these transistors offer reliable performance and efficient operation in various electronic circuits.

Surface Mount: YES

With surface-mount capability, these transistors are easy to install on PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 30 V

The 30V minimum breakdown voltage ensures protection against voltage spikes and overloads, making the transistors suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into circuit designs and provides stability during assembly and mounting.

Terminal Form: GULL WING

The gull wing terminal form offers secure solder connections and enhances thermal performance, ensuring reliable operation in demanding environments.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's conductivity, enabling efficient switching and improved performance in various applications.

No. of Elements: 2

Having 2 elements in the transistor provides versatility in circuit design and allows for more complex switching configurations.

Maximum Drain Current (Abs) (ID): 0.75 A

The maximum drain current of 0.75A enables the transistors to handle high current loads, making them suitable for power switching applications.

No. of Terminals: 6

With 6 terminals, these transistors offer flexible connectivity options and allow for easy integration into circuit designs.

Maximum Power Dissipation (Abs): 0.36 W

The maximum power dissipation of 0.36W ensures efficient heat dissipation and reliable performance under high load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and allows for high-density mounting, making these transistors ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high-speed switching and low power consumption, making these transistors efficient and reliable for various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, these transistors can withstand high-temperature environments and maintain stable performance in demanding conditions.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability, ensuring long-term performance and stability in electronic circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers corrosion resistance and low contact resistance, ensuring reliable connections and efficient operation in various environments.

Maximum Drain-Source On Resistance: 0.4 ohm

With a low drain-source on resistance of 0.4 ohm, these transistors reduce power losses and improve efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easy integration into various electronic systems.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures reliable solder connections and prevents thermal damage during assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, these transistors can withstand high-temperature soldering processes, ensuring secure and durable solder connections.

Maximum Feedback Capacitance (Crss): 25 pF

The maximum feedback capacitance of 25 pF ensures stable high-frequency performance and efficient signal processing in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDG8850NZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.75 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

25 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDG8850NZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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