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NTR1P02T1G

Onsemi

NTR1P02T1G by Onsemi

NTR1P02T1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.18 ohm RDS(on), and 1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals. Operating up to 150°C, it's designed for high-performance electronic systems.

Median Price

$0.093

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 4,883 parts In-Stock

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$0.067

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Mouser Electronics

USA . 7,230 parts In-Stock

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Chip1Stop

Japan . 174,000 parts In-Stock

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Arrow

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Verical

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Rochester

USA . 15,000 parts In-Stock

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Element14

Singapore . 14,029 parts In-Stock

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Digiode

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Nova Conductors

Japan . 300 parts In-Stock

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Forefront Electronics and Design

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IBS Electronics

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Chip Stock

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NAC Semi

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ComSIT Distribution GmbH

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Semicontronic

India . 75,872 parts In-Stock

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Ampacity Inc.

Singapore . 75,713 parts In-Stock

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Corohmni

South Africa . 478 parts In-Stock

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Corphita

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Argo Parts USA

USA . 1,378 parts In-Stock

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Continental Prestige Electronics

USA . 2,190 parts In-Stock

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Aztec Data Supply Inc.

USA . 323 parts In-Stock

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$1.350

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Perfect Parts

USA . 441,725 parts In-Stock

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Lucentia Tech

USA . 13,204 parts In-Stock

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SupplyDigital Components

Austria . 7,517 parts In-Stock

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Problanco Electronics

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iodParts Technologies Inc.

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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Netroflash

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$0.980

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Overview

Enhance your electronic projects with the NTR1P02T1G by Onsemi - a high-quality P-channel Small Signal Field Effect Transistor with a built-in diode. Perfect for switching applications, this surface-mount transistor offers reliable performance and maximum power dissipation of 0.4W. With a minimum DS breakdown voltage of 20V and a maximum drain current of 1A, this transistor is designed to meet your project needs efficiently. Trust in Onsemi's reputation for superior manufacturing and choose the NTR1P02T1G for optimal results in your circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-resistance and high input impedance, making them ideal for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can protect against reverse voltage.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Surface mount packaging saves space and allows for automated assembly, making it convenient for use in various electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer easier circuit design and better control of the device's operation.

Maximum DS Breakdown Voltage: 20 V

This voltage rating ensures the transistor can handle typical voltage levels in switching applications.

Maximum Drain Current (ID): 1 A

With a high drain current rating, this FET can handle moderate to high current loads with ease.

Maximum Power Dissipation (Abs): 0.4 W

The low power dissipation helps prevent overheating, improving the reliability of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency and fast switching speeds, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in a wide range of environments.

Maximum Drain-Source On Resistance: 0.18 ohm

Low on-resistance reduces power losses and improves overall efficiency in the circuit.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and ensures a reliable electrical connection.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR1P02T1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR1P02T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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