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NTR1P02LT1H

Onsemi

NTR1P02LT1H by Onsemi

NTR1P02LT1H by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and can handle up to 1.3A Drain Current. This ENHANCEMENT MODE transistor comes in a RECTANGULAR package with GULL WING terminals, suitable for surface mount technology.

Median Price

$0.075

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.078

1k+ parts

$0.065

10k+ parts

$0.058

12,000

-

$0.078

$0.065

$0.058

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.072

12,000

-

-

-

$0.072

Distributors (In-Stock)

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Digiode

USA . 150 parts In-Stock

1+ parts

$0.061

100+ parts

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150

$0.061

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Vyrian

USA . 4,678 parts In-Stock

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4,678

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,662 parts In-Stock

1+ parts

$0.054

100+ parts

-

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-

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11,662

$0.054

-

-

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Corphita

USA . 630 parts In-Stock

1+ parts

$0.058

100+ parts

-

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630

$0.058

-

-

-

Corohmni

South Africa . 81 parts In-Stock

1+ parts

$0.064

100+ parts

-

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81

$0.064

-

-

-

AZTECH Wire

Italy . 830 parts In-Stock

1+ parts

$12.270

100+ parts

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830

$12.270

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Kulean Microsystems

USA . 8,284 parts In-Stock

1+ parts

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8,284

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A-Z Elektronik GmbH

Germany . 6,761 parts In-Stock

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6,761

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Problanco Electronics

Mexico . 6,609 parts In-Stock

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6,609

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SupplyDigital Components

Austria . 3,359 parts In-Stock

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3,359

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TANS Electronics

Latvia . 2,483 parts In-Stock

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2,483

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Kepictronics

USA . 2,389 parts In-Stock

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2,389

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Microchip USA

USA . 1,878 parts In-Stock

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1,878

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UHIMA Technologies

Türkiye . 436 parts In-Stock

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436

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Overview

Boost your electronics projects with the NTR1P02LT1H by Onsemi, a top-quality P-channel small signal field effect transistor with built-in diode. Ideal for switching applications, this surface-mount transistor offers a minimum DS breakdown voltage of 20V and a maximum drain current of 1.3A. Onsemi's reputation for excellence ensures reliability and performance. Enhance your designs with the value and benefits this product provides, delivering efficiency and precision to your projects. Upgrade now and experience the advantages of the NTR1P02LT1H in your next electronic endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for high-side switching applications and have lower ON-resistance compared to N-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such circuits.

Surface Mount: YES

Suitable for surface mount technology assembly, making it ideal for compact and densely populated PCBs.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle a wide range of voltage levels in switching operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment during assembly.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and easy soldering during PCB assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer low ON-resistance and fast switching speeds for improved performance.

No. of Terminals: 3

Having 3 terminals allows for flexible circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and enables high-density mounting.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high input impedance and low power consumption for efficient operation.

Transistor Element Material: SILICON

Silicon transistors offer reliable and consistent performance over a wide temperature range.

Terminal Finish: MATTE TIN

The matte tin finish ensures good solderability and reliable electrical connections.

Maximum Drain Current (ID): 1.3 A

With a maximum drain current of 1.3 A, this transistor can handle moderate current levels in switching applications.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable solder joints during assembly.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260 °C, suitable for lead-free soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR1P02LT1H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.3 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR1P02LT1H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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