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NTR1P02LT3G

Onsemi

NTR1P02LT3G by Onsemi

NTR1P02LT3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A Drain Current, and 0.22 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating b/w -55 to 150°C with Matte Tin finish for enhanced performance.

Median Price

$0.215

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 130 parts In-Stock

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$0.023

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$0.023

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$0.023

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130

$0.023

$0.023

$0.023

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Arrow

USA . 2,878 parts In-Stock

1+ parts

$0.388

100+ parts

$0.152

1k+ parts

$0.063

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2,878

$0.388

$0.152

$0.063

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DigiKey

USA . 8,375 parts In-Stock

1+ parts

$0.410

100+ parts

$0.159

1k+ parts

$0.106

10k+ parts

$0.075

8,375

$0.410

$0.159

$0.106

$0.075

Mouser Electronics

USA . 1,506 parts In-Stock

1+ parts

$0.530

100+ parts

$0.205

1k+ parts

$0.122

10k+ parts

$0.110

1,506

$0.530

$0.205

$0.122

$0.110

Element14

Singapore . 32,659 parts In-Stock

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-

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$0.221

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$0.133

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$0.115

32,659

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$0.221

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$0.115

Farnell

UK . 27,299 parts In-Stock

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$0.209

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$0.081

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$0.070

27,299

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$0.209

$0.081

$0.070

Chip1Stop

Japan . 9,950 parts In-Stock

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-

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$0.151

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$0.063

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$0.055

9,950

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$0.151

$0.063

$0.055

Verical

USA . 2,878 parts In-Stock

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$0.152

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$0.063

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2,878

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$0.152

$0.063

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Distributors (In-Stock)

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Digiode

USA . 695 parts In-Stock

1+ parts

$0.331

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695

$0.331

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Nova Conductors

Japan . 10 parts In-Stock

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$1.000

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10

$1.000

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Cyclops Electronics Ltd

UK . 58,365 parts In-Stock

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IBS Electronics

USA . 40,000 parts In-Stock

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$0.192

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$0.192

Chip Stock

USA . 32,250 parts In-Stock

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32,250

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Vyrian

USA . 17,402 parts In-Stock

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NAC Semi

USA . 10,000 parts In-Stock

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$0.103

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$0.103

Ashlea Components Ltd

UK . 375 parts In-Stock

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375

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Distributors (Availability)

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Ampacity Inc.

Singapore . 17,333 parts In-Stock

1+ parts

$0.065

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17,333

$0.065

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Corohmni

South Africa . 249 parts In-Stock

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$0.077

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249

$0.077

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Corphita

USA . 804 parts In-Stock

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$0.313

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804

$0.313

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Component Stockers USA

USA . 93,330 parts In-Stock

1+ parts

$0.390

100+ parts

$0.120

1k+ parts

$0.090

10k+ parts

$0.060

93,330

$0.390

$0.120

$0.090

$0.060

Continental Prestige Electronics

USA . 16,685 parts In-Stock

1+ parts

$0.400

100+ parts

$0.166

1k+ parts

$0.098

10k+ parts

$0.077

16,685

$0.400

$0.166

$0.098

$0.077

Perfect Parts

USA . 324,558 parts In-Stock

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GreenTree Electronics

Israel . 50,000 parts In-Stock

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Kepictronics

USA . 48,000 parts In-Stock

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iodParts Technologies Inc.

India . 28,375 parts In-Stock

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Lixinc

USA . 15,962 parts In-Stock

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Authorized Procurement Solutions

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Eastek

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A-Z Elektronik GmbH

Germany . 7,079 parts In-Stock

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Kulean Microsystems

USA . 6,901 parts In-Stock

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TANS Electronics

Latvia . 6,668 parts In-Stock

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Problanco Electronics

Mexico . 4,962 parts In-Stock

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 2,620 parts In-Stock

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UHIMA Technologies

Türkiye . 589 parts In-Stock

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Overview

Discover the NTR1P02LT3G by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor with a built-in diode for enhanced performance in switching applications. With a maximum drain current of 1.3 A and a low on-resistance of 0.22 ohm, this transistor offers exceptional reliability and efficiency. From its robust construction to its wide operating temperature range, Onsemi's expertise shines through in every aspect of this product. Upgrade your electronic designs with the NTR1P02LT3G and experience the difference in quality and performance that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where a negative voltage is required for operation, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a diode, reducing component count and board space requirements.

Transistor Application: SWITCHING

Designed for high-speed switching applications, ensuring efficient performance in electronic circuits.

Surface Mount: YES

Allows for easy and compact mounting on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 20 V

Provides a sufficient voltage rating for reliable operation in various electronic circuits.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation during assembly, improving manufacturing efficiency.

Terminal Form: GULL WING

Enables secure and reliable solder connections on the circuit board, enhancing the overall reliability of the product.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of the transistor's conductivity, enhancing the versatility of the device in various applications.

Maximum Drain Current (Abs) (ID): 1.3 A

Supports high current flow, making it suitable for applications that require a significant amount of power.

No. of Terminals: 3

Provides necessary connections for the transistor to operate effectively in a circuit.

Maximum Power Dissipation (Abs): 0.4 W

Can handle power dissipation efficiently, ensuring the transistor's reliability under operating conditions.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space on the circuit board and allows for high-density mounting of components.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Features advanced semiconductor technology for improved performance and reliability in electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate effectively at elevated temperatures, suitable for demanding environmental conditions.

Transistor Element Material: SILICON

Utilizes silicon material for the transistor element, known for its high performance and reliability in electronic devices.

Minimum Operating Temperature: -55 °C

Can operate in cold temperatures, making it suitable for a wide range of operating conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable finish for the terminal connections, ensuring long-term performance and stability.

Maximum Drain-Source On Resistance: 0.22 ohm

Low on-resistance enhances the efficiency of the transistor in conducting current, reducing power losses in the circuit.

Terminal Position: DUAL

Offers flexibility in circuit design by providing multiple terminal options for connection to other components.

Maximum Time At Peak Reflow Temperature (s): 40

Able to withstand peak reflow temperatures for a specified duration during manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of enduring high reflow temperatures during soldering processes without compromising its performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR1P02LT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.3 A

Maximum Drain Current (ID):

1.3 A

Maximum Drain-Source On Resistance:

.22 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR1P02LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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