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NTR1P02T1

Onsemi

NTR1P02T1 by Onsemi

NTR1P02T1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm RDS(on), and operates in ENHANCEMENT MODE. This small outline transistor with GULL WING terminals is designed for high temperature environments up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 5,115 parts In-Stock

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Digiode

USA . 2,394 parts In-Stock

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Semi Source

USA . 10 parts In-Stock

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10

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AZTECH Wire

Italy . 637 parts In-Stock

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$15.100

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637

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Ampacity Inc.

Singapore . 1,296 parts In-Stock

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$41.050

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RC Electronics

USA . 54,000 parts In-Stock

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Kepictronics

USA . 12,880 parts In-Stock

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SupplyDigital Components

Austria . 6,855 parts In-Stock

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Problanco Electronics

Mexico . 6,816 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,776 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,808 parts In-Stock

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Assy Fe

Spain . 2,700 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 863 parts In-Stock

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UHIMA Technologies

Türkiye . 856 parts In-Stock

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Corphita

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Corohmni

South Africa . 78 parts In-Stock

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Overview

Upgrade your electronics with the NTR1P02T1 by Onsemi, a top-quality P-channel small signal FET perfect for switching applications. With a single configuration and built-in diode, this transistor offers exceptional performance and reliability. Its sleek rectangular package design and gull wing terminals make it easy to install, while its low power dissipation and high drain current ensure optimal efficiency. Trust Onsemi's expertise in semiconductor technology to deliver a product that exceeds your expectations. Experience the difference with the NTR1P02T1 and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low gate capacitance and high input impedance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient protection against reverse voltage and current spikes, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures reliable and efficient performance in switching circuits.

Surface Mount: YES

Surface mount capability makes it easy to integrate this transistor into compact and densely populated circuit boards.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages safely, providing a robust solution for various applications.

Maximum Drain Current (ID): 1 A

Capable of handling a maximum drain current of 1A, this transistor is suitable for low to medium power applications.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can effectively dissipate heat and operate within safe temperature limits.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C, this transistor can withstand higher temperature environments, ensuring reliable performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR1P02T1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR1P02T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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