Loading...

NTR1P02T3

Onsemi

NTR1P02T3 by Onsemi

NTR1P02T3 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 1A Drain Current, and 0.18 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating at up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,175

-

-

-

-

Digiode

USA . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 514 parts In-Stock

1+ parts

$8.900

100+ parts

-

1k+ parts

-

10k+ parts

-

514

$8.900

-

-

-

Component Stockers USA

USA . 282 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

282

$99.990

-

-

-

Kulean Microsystems

USA . 7,711 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,711

-

-

-

-

Problanco Electronics

Mexico . 7,477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,477

-

-

-

-

SupplyDigital Components

Austria . 6,682 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,682

-

-

-

-

TANS Electronics

Latvia . 4,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,475

-

-

-

-

UHIMA Technologies

Türkiye . 768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

768

-

-

-

-

Corphita

USA . 283 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

283

-

-

-

-

Corohmni

South Africa . 101 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

101

-

-

-

-

Overview

Enhance your electronic projects with the NTR1P02T3 by Onsemi, a high-quality P-channel small signal FET perfect for switching applications. With a built-in diode and a maximum drain current of 1A, this transistor offers reliable performance and efficiency. Onsemi's reputation for excellence ensures you're getting a top-notch product. Whether you're a hobbyist or a professional, this surface-mount transistor in a compact package provides value and versatility. Upgrade your designs with the NTR1P02T3 and experience the benefits of superior technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their lower on-resistance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and offers reverse polarity protection.

Transistor Application: SWITCHING

The transistor is specifically designed for switching applications, providing reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Minimum DS Breakdown Voltage: 20 V

The breakdown voltage of 20V ensures that the transistor can handle higher voltages without damage.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and efficient PCB layout.

Terminal Form: GULL WING

Gull wing terminals provide stability and ease of soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low on-state resistance, improving overall performance.

Maximum Drain Current (Abs) (ID): 1 A

With a maximum drain current of 1A, the transistor can handle moderate current loads.

No. of Terminals: 3

Having 3 terminals allows for proper connections in the circuit, ensuring functionality.

Maximum Power Dissipation (Abs): 0.4 W

The maximum power dissipation of 0.4W indicates the transistor's ability to handle power efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for denser circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance and reliability in the transistor.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand higher temperatures in various applications.

Transistor Element Material: SILICON

Silicon transistors offer good thermal conductivity and high temperature tolerance, ensuring stable performance.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and corrosion resistance to the terminals.

Maximum Drain-Source On Resistance: 0.18 ohm

Low drain-source on resistance of 0.18 ohm reduces power losses and improves efficiency in switching operations.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections, accommodating different layout requirements.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper soldering and reliability during assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTR1P02T3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1 A

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.18 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTR1P02T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9