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FDG8842CZ

Onsemi

FDG8842CZ by Onsemi

FDG8842CZ by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, and built-in diode. Ideal for switching applications, it has a max drain current of 0.75A, on-resistance of 0.4 ohm, and breakdown voltage of 30V. With a package style of small outline and operating temp up to 150°C, it's suitable for various electronic designs.

Median Price

$0.193

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,818 parts In-Stock

1+ parts

$0.193

100+ parts

$0.182

1k+ parts

$0.164

10k+ parts

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8,818

$0.193

$0.182

$0.164

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Distributors (In-Stock)

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Digiode

USA . 2,165 parts In-Stock

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$0.183

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2,165

$0.183

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Nova Conductors

Japan . 57 parts In-Stock

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$0.248

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57

$0.248

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NAC Semi

USA . 18,000 parts In-Stock

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$0.206

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$0.206

Chip Stock

USA . 13,848 parts In-Stock

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Vyrian

USA . 8,724 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,682 parts In-Stock

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Dark Horse Electronics

USA . 2,662 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,500 parts In-Stock

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Semi Source

USA . 323 parts In-Stock

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323

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Distributors (Availability)

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Semicontronic

India . 8,796 parts In-Stock

1+ parts

$0.164

100+ parts

$0.160

1k+ parts

$0.159

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8,796

$0.164

$0.160

$0.159

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Ampacity Inc.

Singapore . 8,619 parts In-Stock

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$0.164

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8,619

$0.164

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Corphita

USA . 2,652 parts In-Stock

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$0.174

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2,652

$0.174

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Continental Prestige Electronics

USA . 5,946 parts In-Stock

1+ parts

$0.248

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$0.243

5,946

$0.248

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$0.243

Argo Parts USA

USA . 1,018 parts In-Stock

1+ parts

$0.248

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$0.241

1,018

$0.248

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$0.241

Corohmni

South Africa . 358 parts In-Stock

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$1.250

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358

$1.250

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Microchip USA

USA . 439 parts In-Stock

1+ parts

$1.330

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$1.330

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$1.330

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$1.320

439

$1.330

$1.330

$1.330

$1.320

Aztec Data Supply Inc.

USA . 1,033 parts In-Stock

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$1.800

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1,033

$1.800

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$2.249

100+ parts

$2.047

1k+ parts

$1.844

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40

$2.249

$2.047

$1.844

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RC Electronics

USA . 72,242 parts In-Stock

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Kepictronics

USA . 65,000 parts In-Stock

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Futuretech Components

Singapore . 30,000 parts In-Stock

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Lixinc

USA . 17,012 parts In-Stock

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Kulean Microsystems

USA . 7,925 parts In-Stock

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Problanco Electronics

Mexico . 7,126 parts In-Stock

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TANS Electronics

Latvia . 6,624 parts In-Stock

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S.R.D Solutions

India . 5,700 parts In-Stock

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iodParts Technologies Inc.

India . 2,500 parts In-Stock

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Supply Digital

USA . 1,485 parts In-Stock

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UHIMA Technologies

Türkiye . 962 parts In-Stock

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SupplyDigital Components

Austria . 623 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.243

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$0.236

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$0.231

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$0.231

Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

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$2.247

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$2.247

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$2.247

100

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$2.247

$2.247

$2.247

Overview

Upgrade your electronic projects with the high-quality FDG8842CZ by Onsemi, a top manufacturer in the industry. This Small Signal Field Effect Transistor (FET) offers versatile applications in switching, thanks to its N-Channel and P-Channel configuration. With a compact design and excellent performance, this transistor provides outstanding value for your projects. Trust Onsemi's expertise and elevate your designs with the FDG8842CZ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring it stays in good condition for longer periods of time.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Versatile transistor that can be used in a wide range of circuit designs.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and efficient power management.

Maximum Drain Current (Abs): 0.75 A

Capable of handling moderate current levels, suitable for many small signal applications.

Maximum Power Dissipation (Abs): 0.36 W

Efficient power handling capabilities, helps in reducing heat dissipation and improving overall performance.

Maximum Operating Temperature: 150 °C

Can operate effectively in a wide range of temperature environments, making it suitable for various applications.

Maximum Drain-Source On Resistance: 0.4 ohm

Low on-resistance helps in minimizing power loss and improving efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDG8842CZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.75 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

25 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDG8842CZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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