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ZVP2110ASTOB

Zetex Plc

ZVP2110ASTOB by Zetex Plc

ZVP2110ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 8Ω Drain-Source Resistance, and 0.23A Drain Current. With SILICON element material and ENHANCEMENT MODE operation, it's ideal for various electronic circuits.

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Aztec Data Supply Inc.

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AZTECH Wire

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Overview

Experience the superior performance and reliability of the ZVP2110ASTOB by Zetex Plc, a leading manufacturer in the field of Small Signal Field Effect Transistors. Ideal for switching applications, this P-Channel transistor offers a minimum DS breakdown voltage of 100V and a maximum drain current of 0.23A. With its high-quality construction and innovative technology, this transistor provides unmatched efficiency and durability. Upgrade your electronics with the ZVP2110ASTOB and enjoy seamless operation and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and long-lasting performance of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower leakage currents and are suitable for high-side switching applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Minimum DS Breakdown Voltage: 100 V

Can handle higher voltages, providing a safety margin for the circuit.

Package Shape: RECTANGULAR

Allows for easy mounting and placement on PCBs or breadboards.

Terminal Form: WIRE

Wire terminals ensure easy connectivity and secure connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors have high input impedance and low leakage current, improving overall performance.

No. of Terminals: 3

Simple and straightforward connection setup with only three terminals required.

Package Style (Meter): IN-LINE

Convenient form factor for easy integration into circuits or systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and performance compared to other transistor technologies.

Maximum Operating Temperature: 200 °C

Can operate at high temperatures without performance degradation, suitable for various applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency.

Terminal Finish: MATTE TIN

Provides a reliable and long-lasting connection without corrosion or oxidation issues.

Maximum Drain Current (ID): 0.23 A

Capable of handling high current loads for reliable switching operations.

Maximum Drain-Source On Resistance: 8 ohm

Low on-resistance ensures efficient switching and minimal power loss.

Terminal Position: SINGLE

Simplified design with a single terminal position for easy installation and connectivity.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP2110ASTOB attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Zetex Plc

Specs

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP2110ASTOB Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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