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NVR5198NLT3G

Onsemi

NVR5198NLT3G by Onsemi

NVR5198NLT3G by Onsemi is a single N-channel FET with a max drain current of 2.2A and power dissipation of 1.5W. Ideal for applications requiring high temperature resistance up to 150°C, such as in surface mount configurations for compact electronic devices.

Median Price

$0.785

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 106 parts In-Stock

1+ parts

$0.730

100+ parts

$0.289

1k+ parts

$0.198

10k+ parts

$0.146

106

$0.730

$0.289

$0.198

$0.146

Mouser Electronics

USA . 622 parts In-Stock

1+ parts

$0.840

100+ parts

$0.372

1k+ parts

$0.271

10k+ parts

-

622

$0.840

$0.372

$0.271

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.192

100+ parts

-

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150

$0.192

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Digiode

USA . 2,388 parts In-Stock

1+ parts

$0.504

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2,388

$0.504

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Flip Electronics

USA . 22,758 parts In-Stock

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22,758

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NAC Semi

USA . 20,000 parts In-Stock

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$0.656

20,000

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$0.656

IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

-

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$0.421

10,000

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$0.421

Cyclops Electronics Ltd

UK . 9,770 parts In-Stock

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9,770

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Vyrian

USA . 5,494 parts In-Stock

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5,494

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Prism Electronics

USA . 23 parts In-Stock

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23

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Distributors (Availability)

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Continental Prestige Electronics

USA . 2,156 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

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10k+ parts

$0.188

2,156

$0.192

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-

$0.188

Argo Parts USA

USA . 198 parts In-Stock

1+ parts

$0.192

100+ parts

-

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$0.186

198

$0.192

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-

$0.186

Aztec Data Supply Inc.

USA . 2,062 parts In-Stock

1+ parts

$0.340

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2,062

$0.340

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Semicontronic

India . 5,504 parts In-Stock

1+ parts

$0.451

100+ parts

$0.440

1k+ parts

$0.437

10k+ parts

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5,504

$0.451

$0.440

$0.437

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Ampacity Inc.

Singapore . 5,484 parts In-Stock

1+ parts

$0.451

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5,484

$0.451

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Corphita

USA . 723 parts In-Stock

1+ parts

$0.477

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723

$0.477

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Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.530

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280

$0.530

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iodParts Technologies Inc.

India . 9,674 parts In-Stock

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9,674

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Kulean Microsystems

USA . 7,928 parts In-Stock

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7,928

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SupplyDigital Components

Austria . 5,876 parts In-Stock

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5,876

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Problanco Electronics

Mexico . 5,244 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Lixinc

USA . 2,806 parts In-Stock

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2,806

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UHIMA Technologies

Türkiye . 410 parts In-Stock

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410

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TANS Electronics

Latvia . 155 parts In-Stock

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155

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Overview

Looking for a high-quality Small Signal Field Effect Transistor? Look no further than the NVR5198NLT3G by Onsemi! Known for their reliable products, Onsemi delivers top-notch performance with this N-CHANNEL FET. Perfect for a variety of applications, this transistor offers customers exceptional value and benefits. Trust Onsemi to provide you with the quality components you need for your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are commonly used in low-side switching applications, making this product suitable for a wide range of electronic devices.

Configuration: SINGLE

The single configuration simplifies the circuit design and enhances the overall reliability of the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost in manufacturing processes.

Maximum Drain Current (Abs) (ID): 2.2 A

With a maximum drain current of 2.2 A, this FET can handle high current applications effectively.

Maximum Power Dissipation (Abs): 1.5 W

The low power dissipation of 1.5 W ensures efficient operation and reduces heat generation in the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high speed and low power consumption, making this transistor ideal for small signal applications.

Maximum Operating Temperature: 150 °C

The high operating temperature of 150°C allows this FET to withstand elevated temperatures, ensuring reliability in harsh environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, enhancing the longevity of the product.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures proper soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable solder joints and ensures the durability of the FET in various operating conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVR5198NLT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVR5198NLT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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