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DMP2100U-7

Diodes Incorporated

DMP2100U-7 by Diodes Incorporated

DMP2100U-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 4.3A max drain current, and 0.038 ohm RDS(on). Ideal for switching applications in enhancement mode operation, it comes in a small outline package with gull wing terminals for surface mount assembly at up to 260°C peak reflow temp.

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 17,173 parts In-Stock

1+ parts

$0.420

100+ parts

$0.162

1k+ parts

$0.107

10k+ parts

-

17,173

$0.420

$0.162

$0.107

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.065

3,000

-

-

-

$0.065

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.082

-

-

-

Bristol Electronics

USA . 3,930 parts In-Stock

1+ parts

$0.300

100+ parts

$0.150

1k+ parts

$0.060

10k+ parts

$0.045

3,930

$0.300

$0.150

$0.060

$0.045

Chip Stock

USA . 201,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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201,900

-

-

-

-

Vyrian

USA . 178,618 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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178,618

-

-

-

-

ComSIT Distribution GmbH

Germany . 9,128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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9,128

-

-

-

-

Micros

Poland . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

3,000

-

-

-

$0.066

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,000

-

-

-

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Partservice

France . 2,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.083

10k+ parts

$0.060

2,900

-

-

$0.083

$0.060

Micros sp.j. W. Kędra i J. Lic

Poland . 2,890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.089

10k+ parts

$0.064

2,890

-

-

$0.089

$0.064

Dan-Mar Components

USA . 1,945 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,945

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 178,618 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

178,618

$0.048

-

-

-

Argo Parts USA

USA . 4,677 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

4,677

$0.082

-

-

$0.079

Continental Prestige Electronics

USA . 1,770 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

1,770

$0.082

-

-

$0.080

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.082

100+ parts

-

1k+ parts

$0.078

10k+ parts

$0.076

50

$0.082

-

$0.078

$0.076

Semicontronic

India . 178,503 parts In-Stock

1+ parts

$0.105

100+ parts

$0.102

1k+ parts

$0.102

10k+ parts

-

178,503

$0.105

$0.102

$0.102

-

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.806

100+ parts

$0.733

1k+ parts

$0.661

10k+ parts

-

20

$0.806

$0.733

$0.661

-

Corohmni

South Africa . 363 parts In-Stock

1+ parts

$1.698

100+ parts

-

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-

10k+ parts

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363

$1.698

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Kepictronics

USA . 32,800 parts In-Stock

1+ parts

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32,800

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Lixinc

USA . 17,394 parts In-Stock

1+ parts

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100+ parts

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17,394

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-

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iodParts Technologies Inc.

India . 9,230 parts In-Stock

1+ parts

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100+ parts

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9,230

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-

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Overview

Enhance your electronic projects with the DMP2100U-7 by Diodes Incorporated, a top-quality P-channel field-effect transistor that offers reliable switching capabilities. With a maximum drain current of 4.3A and a low on-resistance of 0.038 ohm, this small outline package transistor is perfect for a wide range of applications. Whether you're designing power supplies, battery management systems, or motor control circuits, this enhancement mode FET will deliver superior performance and durability. Trust in the expertise of Diodes Incorporated to provide you with cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor

Polarity or Channel Type: P-CHANNEL

Suitable for certain circuit configurations and applications

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for circuits that require a diode

Transistor Application: SWITCHING

Ideal for use in switching circuits

Surface Mount: YES

Allows for easy installation on circuit boards

Minimum DS Breakdown Voltage: 20 V

Can handle high voltages for various applications

Package Shape: RECTANGULAR

Fits well on circuit boards for space efficiency

Terminal Form: GULL WING

Provides secure connections for reliable performance

Operating Mode: ENHANCEMENT MODE

Enhances control over the transistor's operation

Maximum Drain Current: 4.3 A

Can handle high current loads effectively

Maximum Power Dissipation: 1.3 W

Efficiently dissipates heat for reliable operation

Package Style: SMALL OUTLINE

Compact design for space-constrained applications

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides stable performance and low noise operation

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and corrosion resistance

Maximum Drain-Source On Resistance: 0.038 ohm

Low resistance for efficient operation

Terminal Position: DUAL

Allows for versatile connectivity options

Maximum Time At Peak Reflow Temperature: 30s

Withstands reflow soldering for easy assembly

Peak Reflow Temperature: 260

Withstands high reflow temperatures for manufacturing

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP2100U-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.3 A

Maximum Drain Current (ID):

4.3 A

Maximum Drain-Source On Resistance:

.038 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP2100U-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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