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DMP21D0UT-7

Diodes Incorporated

DMP21D0UT-7 by Diodes Incorporated

DMP21D0UT-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 0.65A max drain current, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.33W and operating temperature up to 150°C, it offers reliable performance in small outline packages.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 4 parts In-Stock

1+ parts

$0.466

100+ parts

$0.195

1k+ parts

$0.152

10k+ parts

-

4

$0.466

$0.195

$0.152

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Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.082

3,000

-

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-

$0.082

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.082

3,000

-

-

-

$0.082

Element14

Singapore . 2,645 parts In-Stock

1+ parts

-

100+ parts

$0.120

1k+ parts

$0.084

10k+ parts

$0.083

2,645

-

$0.120

$0.084

$0.083

Farnell

UK . 1,799 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.062

10k+ parts

$0.059

1,799

-

-

$0.062

$0.059

DigiKey

USA . 1,572 parts In-Stock

1+ parts

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$0.081

1,572

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-

-

$0.081

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 382 parts In-Stock

1+ parts

$0.063

100+ parts

$0.046

1k+ parts

$0.037

10k+ parts

-

382

$0.063

$0.046

$0.037

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.098

100+ parts

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10

$0.098

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Vyrian

USA . 193,919 parts In-Stock

1+ parts

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193,919

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NAC Semi

USA . 180,000 parts In-Stock

1+ parts

-

100+ parts

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$0.055

180,000

-

-

-

$0.055

Chip Stock

USA . 72,500 parts In-Stock

1+ parts

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72,500

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Cyclops Electronics Ltd

UK . 10,306 parts In-Stock

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10,306

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Euro-Tech

UK . 2,225 parts In-Stock

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2,225

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Speed Components Ltd

Israel . 980 parts In-Stock

1+ parts

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980

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 194,074 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

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194,074

$0.049

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Semicontronic

India . 193,584 parts In-Stock

1+ parts

$0.049

100+ parts

$0.048

1k+ parts

$0.048

10k+ parts

-

193,584

$0.049

$0.048

$0.048

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

$0.092

10k+ parts

-

1,000

$0.096

-

$0.092

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Argo Parts USA

USA . 2,606 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

$0.095

2,606

$0.098

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-

$0.095

Continental Prestige Electronics

USA . 655 parts In-Stock

1+ parts

$0.365

100+ parts

$0.154

1k+ parts

$0.081

10k+ parts

$0.062

655

$0.365

$0.154

$0.081

$0.062

Corohmni

South Africa . 118 parts In-Stock

1+ parts

$1.500

100+ parts

-

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118

$1.500

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Aztec Data Supply Inc.

USA . 271 parts In-Stock

1+ parts

$1.550

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271

$1.550

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.961

100+ parts

$1.785

1k+ parts

$1.608

10k+ parts

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500

$1.961

$1.785

$1.608

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Formix International (Excess)

India . 36,679 parts In-Stock

1+ parts

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36,679

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Infinite Electronics LLP (Excess)

. 36,001 parts In-Stock

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36,001

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Kepictronics

USA . 15,800 parts In-Stock

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15,800

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Authorized Procurement Solutions

USA . 4,480 parts In-Stock

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4,480

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Assy Fe

Spain . 3,000 parts In-Stock

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3,000

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EMSNET (Excess)

USA . 3,000 parts In-Stock

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3,000

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Lixinc

USA . 716 parts In-Stock

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716

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Overview

Unlock the power of cutting-edge technology with the DMP21D0UT-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal Field Effect Transistors that provide unparalleled performance and reliability. Ideal for switching applications, this P-Channel transistor offers enhanced efficiency and precision. With a focus on innovation and customer satisfaction, Diodes Incorporated ensures that their products meet the highest standards of excellence. Upgrade your electronics with the DMP21D0UT-7 and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for use in various electronic devices.

Polarity or Channel Type: P-CHANNEL

The P-channel type allows for easy integration into circuits and provides efficient performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and enhances the functionality of the transistor in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and reliability in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, the transistor can handle high voltage levels, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular package shape is standardized and easy to handle, making it compatible with existing PCB layouts and assembly processes.

Terminal Form: GULL WING

The gull-wing terminal form provides secure connections and allows for easy soldering during assembly, ensuring reliable performance.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation offers improved control and efficiency in switching applications, enhancing overall performance.

Maximum Drain Current (Abs) (ID): 0.65 A

With a maximum drain current of 0.65A, the transistor can handle high current loads, making it suitable for a variety of applications.

No. of Terminals: 3

Having 3 terminals allows for proper connections and control within a circuit, enabling versatile use in various electronic devices.

Maximum Power Dissipation (Abs): 0.33 W

The transistor's maximum power dissipation of 0.33W ensures efficient heat dissipation, contributing to overall reliability and longevity.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high performance and reliability, ensuring stable operation in various conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperature environments, making it suitable for industrial applications.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability, ensuring stable performance in diverse applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections and performance.

Maximum Drain Current (ID): 0.59 A

With a maximum drain current of 0.59A, the transistor can handle high current loads, making it suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.495 ohm

The low drain-source on resistance of 0.495 ohms enhances efficiency and reduces power dissipation, resulting in improved performance.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and proper connections, enhancing usability in various circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and assembly processes, contributing to reliable performance.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C provides for reliable solder joints during assembly, ensuring stability and longevity of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP21D0UT-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.65 A

Maximum Drain Current (ID):

.59 A

Maximum Drain-Source On Resistance:

.495 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP21D0UT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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