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DMP21D0UFB4-7B

Diodes Incorporated

DMP21D0UFB4-7B by Diodes Incorporated

DMP21D0UFB4-7B by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 1.17A max drain current, suitable for switching applications. It operates in enhancement mode, has 0.495 ohm max on-resistance, and comes in a chip carrier package style. With a temperature range of -55 to 150°C, it features a bottom terminal position and drain case connection for efficient performance.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 10,013 parts In-Stock

1+ parts

$0.422

100+ parts

$0.164

1k+ parts

$0.116

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-

10,013

$0.422

$0.164

$0.116

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Mouser Electronics

USA . 161,383 parts In-Stock

1+ parts

$0.440

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$0.170

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$0.101

10k+ parts

$0.068

161,383

$0.440

$0.170

$0.101

$0.068

DigiKey

USA . 130,522 parts In-Stock

1+ parts

$0.440

100+ parts

$0.170

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$0.112

10k+ parts

$0.088

130,522

$0.440

$0.170

$0.112

$0.088

Verical

USA . 2,640,000 parts In-Stock

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-

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$0.064

2,640,000

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$0.064

Arrow

USA . 10,000 parts In-Stock

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$0.075

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$0.075

Farnell

UK . 9,515 parts In-Stock

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-

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$0.125

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$0.079

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$0.078

9,515

-

$0.125

$0.079

$0.078

Element14

Singapore . 9,515 parts In-Stock

1+ parts

-

100+ parts

$0.117

1k+ parts

$0.090

10k+ parts

$0.078

9,515

-

$0.117

$0.090

$0.078

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.097

100+ parts

-

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300

$0.097

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NAC Semi

USA . 510,000 parts In-Stock

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$0.058

510,000

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$0.058

Chip Stock

USA . 142,500 parts In-Stock

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142,500

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Vyrian

USA . 36,455 parts In-Stock

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36,455

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IBS Electronics

USA . 30,000 parts In-Stock

1+ parts

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$0.199

30,000

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$0.199

Bristol Electronics

USA . 5,018 parts In-Stock

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5,018

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Speed Components Ltd

Israel . 420 parts In-Stock

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420

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Rebound Electronics

UK . 21 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 34,633 parts In-Stock

1+ parts

$0.048

100+ parts

-

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34,633

$0.048

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Semicontronic

India . 34,566 parts In-Stock

1+ parts

$0.048

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$0.047

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$0.047

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34,566

$0.048

$0.047

$0.047

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Decca Corp

Germany . 34,502 parts In-Stock

1+ parts

$0.048

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$0.047

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$0.047

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34,502

$0.048

$0.047

$0.047

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Argo Parts USA

USA . 2,486 parts In-Stock

1+ parts

$0.092

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$0.089

2,486

$0.092

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$0.089

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.097

100+ parts

$0.095

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2,000

$0.097

$0.095

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iBuyXS LLC

. 5,018 parts In-Stock

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$0.150

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$0.150

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Aztec Data Supply Inc.

USA . 180 parts In-Stock

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$0.900

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180

$0.900

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Corohmni

South Africa . 192 parts In-Stock

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$1.061

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Perfect Parts

USA . 1,020,355 parts In-Stock

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iodParts Technologies Inc.

India . 30,000 parts In-Stock

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Metaverse IC Inc.

Canada . 15,369 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,214 parts In-Stock

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Kepictronics

USA . 10,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 9,615 parts In-Stock

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$0.153

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$0.080

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$0.063

9,615

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$0.153

$0.080

$0.063

Lixinc

USA . 5,432 parts In-Stock

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5,432

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Overview

Discover seamless switching capabilities with the DMP21D0UFB4-7B by Diodes Incorporated. As a leader in small signal field effect transistors, Diodes Incorporated delivers top-notch quality and reliability. This P-channel transistor offers enhanced performance with a built-in diode, making it ideal for various switching applications. With a minimum DS breakdown voltage of 20V and maximum drain current of 1.17A, this chip carrier package provides exceptional power dissipation and temperature resistance. Elevate your electronic projects with the DMP21D0UFB4-7B and experience unparalleled efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are key factors.

Polarity or Channel Type: P-CHANNEL

This P-channel FET provides efficient performance in switching applications, making it a reliable choice for various electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies the circuit design and saves space, making this FET convenient for compact electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast and efficient switching characteristics, enhancing the overall performance of the circuit.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on PCBs, making it convenient for automated assembly processes in mass production.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET can handle higher voltages, providing reliable operation in a wide range of voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape enables easy integration into circuit layouts, optimizing space utilization and enhancing circuit design flexibility.

Terminal Form: NO LEAD

The no-lead terminal form eliminates the need for leaded connections, reducing the risk of solder joint failures and enhancing reliability.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode offers precise control over the FET's conductivity, allowing for efficient and accurate signal modulation.

Maximum Drain Current (Abs) (ID): 1.17 A

With a maximum drain current of 1.17A, this FET can handle high current loads, ensuring reliable performance in demanding applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP21D0UFB4-7B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

FAST SWITCHING, LOW THRESHOLD

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

1.17 A

Maximum Drain Current (ID):

1.17 A

Maximum Drain-Source On Resistance:

.495 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10.7 pF

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.099 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP21D0UFB4-7B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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