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DMP2240UDM-7

Diodes Incorporated

DMP2240UDM-7 by Diodes Incorporated

DMP2240UDM-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 2A max drain current, and 0.15 ohm max on resistance. Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C with matte tin terminal finish.

Median Price

$0.538

Lifecycle Status

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14

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1k+

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DigiKey

USA . 100,562 parts In-Stock

1+ parts

$0.680

100+ parts

$0.272

1k+ parts

$0.185

10k+ parts

$0.134

100,562

$0.680

$0.272

$0.185

$0.134

Mouser Electronics

USA . 54,229 parts In-Stock

1+ parts

$0.800

100+ parts

$0.320

1k+ parts

$0.219

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$0.187

54,229

$0.800

$0.320

$0.219

$0.187

Newark

USA . 25 parts In-Stock

1+ parts

$0.857

100+ parts

$0.376

1k+ parts

$0.275

10k+ parts

-

25

$0.857

$0.376

$0.275

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Verical

USA . 21,000 parts In-Stock

1+ parts

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$0.128

21,000

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$0.128

Arrow

USA . 38 parts In-Stock

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$0.128

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38

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$0.128

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Element14

Singapore . 20 parts In-Stock

1+ parts

-

100+ parts

$0.395

1k+ parts

$0.257

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$0.246

20

-

$0.395

$0.257

$0.246

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.217

100+ parts

-

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100

$0.217

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TME

Poland . 5,802 parts In-Stock

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$0.350

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$0.176

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-

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5,802

$0.350

$0.176

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Vyrian

USA . 112,339 parts In-Stock

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112,339

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Chip Stock

USA . 72,500 parts In-Stock

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VRG Components

USA . 33,000 parts In-Stock

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33,000

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IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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$0.088

9,000

-

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$0.088

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.700

6,000

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$0.700

Bristol Electronics

USA . 2,413 parts In-Stock

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2,413

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Distributors (Availability)

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Ampacity Inc.

Singapore . 112,088 parts In-Stock

1+ parts

$0.093

100+ parts

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112,088

$0.093

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Semicontronic

India . 96,125 parts In-Stock

1+ parts

$0.093

100+ parts

$0.091

1k+ parts

$0.090

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96,125

$0.093

$0.091

$0.090

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Modulus Dynamics

Lithuania . 5,103 parts In-Stock

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$0.177

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$0.177

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$0.177

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5,103

$0.177

$0.177

$0.177

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Corohmni

South Africa . 1,010 parts In-Stock

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$0.177

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1,010

$0.177

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.182

100+ parts

$0.173

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$0.173

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40

$0.182

$0.173

$0.173

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Aranea Global

USA . 2,000 parts In-Stock

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$0.213

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$0.204

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2,000

$0.213

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$0.204

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Argo Parts USA

USA . 1,987 parts In-Stock

1+ parts

$0.217

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$0.210

1,987

$0.217

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$0.210

Continental Prestige Electronics

USA . 9,465 parts In-Stock

1+ parts

$0.289

100+ parts

$0.184

1k+ parts

$0.115

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9,465

$0.289

$0.184

$0.115

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Aztec Data Supply Inc.

USA . 90 parts In-Stock

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$0.890

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90

$0.890

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GreenTree Electronics

Israel . 57,000 parts In-Stock

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Lixinc

USA . 8,687 parts In-Stock

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Kepictronics

USA . 6,180 parts In-Stock

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Assy Fe

Spain . 1,500 parts In-Stock

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Robosynatics

Brazil . 692 parts In-Stock

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Lucentia Tech

USA . 692 parts In-Stock

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$0.173

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$0.170

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$0.170

692

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$0.170

Overview

Unlock the power of advanced technology with the DMP2240UDM-7 by Diodes Incorporated. This small signal field-effect transistor boasts high-quality construction and reliable performance, making it ideal for a variety of switching applications. With its P-channel configuration and built-in diode elements, this transistor offers enhanced functionality and efficiency. Say goodbye to limitations and hello to endless possibilities with the DMP2240UDM-7 - the perfect solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making it a reliable option for various applications.

Polarity or Channel Type: P-CHANNEL

The P-channel type allows for efficient current flow and control, enhancing the performance of the transistor.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration offers flexibility and versatility in circuit design, making it ideal for complex electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can effectively control the flow of current in circuits, ensuring efficient operation.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy integration into circuit boards, saving space and providing a neat layout.

Terminal Form: GULL WING

The gull wing terminals facilitate easy soldering and mounting onto PCBs, simplifying the assembly process.

Operating Mode: ENHANCEMENT MODE

This mode enables the transistor to enhance its conductivity when a positive voltage is applied, offering precise control over the current flow.

No. of Elements: 2

With two elements in the transistor, it can handle more complex functions and contribute to the overall efficiency of the circuit.

Maximum Drain Current (Abs) (ID): 2 A

The high maximum drain current rating allows the transistor to handle heavier loads without overheating, ensuring reliable performance.

No. of Terminals: 6

The six terminals provide multiple connection points for different circuit configurations, offering versatility in design options.

Maximum Power Dissipation (Abs): 0.6 W

With a high power dissipation capability, this transistor can operate efficiently even under heavy load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-saving and suitable for compact designs, making it ideal for portable electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The MOSFET technology offers high switching speeds and low on-resistance, making it suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliability in various environments.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability, ensuring stable performance over time.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals offers good solderability and corrosion resistance, ensuring a secure connection in the circuit.

Maximum Drain-Source On Resistance: 0.15 ohm

The low on-resistance results in minimal power loss and high efficiency in circuit operation, making it a cost-effective choice.

Terminal Position: DUAL

The dual terminal position allows for easy installation and connection, providing flexibility in circuit layout and design.

Maximum Time At Peak Reflow Temperature (s): 30

This specification indicates the maximum time the transistor can be exposed to peak reflow temperature during soldering, ensuring proper assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance makes this transistor suitable for lead-free soldering processes, ensuring reliable connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP2240UDM-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP2240UDM-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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