Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
MGSF1N03LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.6A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology, it offers reliable performance in small outline packages at up to 150°C.
Median Price
$0.130
Lifecycle Status
Suppliers In-Stock
32
In-Stock Inventory
1k+
Newark
1+ parts
$0.780
100+ parts
$0.344
1k+ parts
$0.217
10k+ parts
-
Future Electronics
$0.095
Chip1Stop
Arrow
$0.052
Verical
Element14
$0.311
$0.245
Farnell
$0.302
$0.238
Adafruit Industries
TME
$0.310
$0.173
$0.126
$0.099
Digiode
$0.494
Maritex
$0.585
$0.142
$0.077
Nova Conductors
$1.000
NAC Semi
$0.197
IBS Electronics
$0.086
$0.174
Chip Stock
Component Sense
Vyrian
South Electronics
ComSIT Distribution GmbH
Velocity Electronics
Bristol Electronics
Sea View Technologies
Sensible Micro Corp
Connect4Technologies Inc.
Microfarads
ACDS - Activité Composants Distribution Service
EPE Components Inc.
Holdelec - ElecDif-Pro
Prism Electronics
Sunrise Surplus Inc.
NPI Materials, Inc.
North Shore Components
Ampacity Inc.
$0.056
Semicontronic
$0.055
$0.054
Corohmni
$0.066
Continental Prestige Electronics
$0.196
$0.192
Argo Parts USA
$0.190
Corphita
$0.468
Netroflash
Aztec Data Supply Inc.
$1.694
Perfect Parts
Metaverse IC Inc.
RC Electronics
$0.200
$0.180
QUARKTWIN TECHNOLOGY LTD
Infinite Electronics LLP (Excess)
Kulean Microsystems
Kepictronics
S.R.D Solutions
Lixinc
TANS Electronics
Problanco Electronics
Eastek
$0.150
A-Z Elektronik GmbH
iodParts Technologies Inc.
SupplyDigital Components
Speed Components Ltd (Excess)
Authorized Procurement Solutions
GreenTree Electronics
Modulus Dynamics
UHIMA Technologies
Robosynatics
$0.023
Lucentia Tech
Advanced Electronics
The use of plastic/epoxy material makes the package durable and cost-effective.
N-channel transistors offer high efficiency and fast switching speeds, making them ideal for many applications.
The built-in diode simplifies circuit design and saves space on the PCB.
This transistor is specifically designed for switching applications, ensuring reliable performance.
Being surface mountable allows for easy assembly and saves space on the PCB.
The high breakdown voltage provides extra protection and reliability in high voltage applications.
The rectangular shape of the package allows for efficient placement on the PCB.
The gull wing terminal form makes soldering easier and more reliable.
Enhancement mode transistors offer low on-resistance and high current capacity, making them suitable for various applications.
The high drain current rating ensures the transistor can handle high loads without overheating.
The three terminals provide easy connectivity in the circuit.
The low power dissipation helps in improving the efficiency and reliability of the transistor.
The small outline package style saves space on the PCB.
MOSFET technology offers high switching speeds and low power consumption.
With a high operating temperature range, this transistor is suitable for a variety of demanding environments.
Silicon transistors offer high performance, reliability, and efficiency.
The matte tin finish provides good conductivity and solderability.
The low on-resistance ensures minimal power loss and high efficiency in operation.
Dual terminal positions provide flexibility in circuit design and connectivity options.
This transistor can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering.
With a high peak reflow temperature tolerance, this transistor can be used in lead-free soldering processes.
Small Signal Field Effect Transistors (FET) MGSF1N03LT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
MGSF1N03LT1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - SOT-23 Pkgs MOSFETS Copper to Gold Wire 8/Dec/2015 SOT23 16/Sep/2016
PCN Assembly/Origin - Mold Compound 07/Sep/2019
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
2N2222A
Micropac Industries
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Comchip Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
SS14
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56351
Souriau
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;
LM2931AZ-5.0G
Onsemi
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
1554216004
Molex
WIRE AND CABLE;
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
LM317T
LM317T by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. Operating temperature ranges from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. With a max output current of 1.5A, this through-hole package regulator is ideal for power supply designs where adjustable voltage levels are needed.
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
ULN2803ADWRG4
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
1N4148WS
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Commercial Components
Gec Plessey Semiconductors
BSS138
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
Daco Semiconductor
2N7000/D26Z
National Semiconductor
2N7000/D26Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A ID. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 0.4W.
2N7002BK,215
NXP Semiconductors
NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.
BSS84PH6433
Infineon Technologies
BSS84PH6433 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A ID, and 8 ohm RDS(on). Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance.
NDS0605
Rochester Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
FDV302PD87Z
Fairchild Semiconductor
Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
NDS331ND87Z
NDS331ND87Z by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.3A ID, and 0.16 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals.
FDS6681Z
FDS6681Z by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 20A max Drain Current. Operating in ENHANCEMENT MODE, it has a max Power Dissipation of 2.5W and 0.0046 ohm Drain-Source On Resistance.
BSS83PL6327XT
BSS83PL6327XT by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage and 0.33A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 2 ohm max on resistance for efficient performance in small outline packages.
LND150K1-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .013 A; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SBSS84LT1G
SBSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10Ω On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 150°C temperature.
BSS138-G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
BSS209PWH6327XTSA1
BSS209PWH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.63A ID, and 0.55 ohm RDS(ON). It is used in small outline applications requiring a single configuration with built-in diode for enhancement mode operation.
2N7002T-7-F
Diodes Incorporated
2N7002T-7-F by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, making it suitable for surface mount designs in various electronic devices.
FDV304P-F169
Onsemi's FDV304P-F169 is a P-CHANNEL FET for switching applications. It features a 25V DS breakdown voltage, 0.46A max drain current, and 1.1 ohm max on resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode at -55 to 150 °C temperature range.
2N7002PS,115
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 6;
2N7002T
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; JESD-30 Code: R-PDSO-G3; Package Body Material: PLASTIC/EPOXY;
FDC5612
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1;
2N7002DW
Onsemi's 2N7002DW is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A max drain current, and 7.5 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a peak reflow temp of 260C and -55 to 150C operating range.
FDY3000NZ
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; JESD-30 Code: R-PDSO-F6; Package Shape: RECTANGULAR;
BSD316SNH6327XTSA1
Infineon's BSD316SNH6327XTSA1 is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for automotive applications. Featuring single configuration with built-in diode, it has 6 terminals in gull wing form and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150 °C operating temp, it offers low 0.0016 ohm RDS(on) for efficient performance.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MGSF1N02LT1G
MGSF1N02LT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
MGSF1N03LT1
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain Current (Abs) (ID): .75 A; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Transistor Application: SWITCHING; JESD-609 Code: e0;
MGSF1N03LT3G
MGSF1N03LT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. It is ideal for SWITCHING applications, featuring a max Drain Current of 1.6A and 0.1 ohm Drain-Source Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
MGSF1P02LT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Form: GULL WING; No. of Terminals: 3;
MGSF1P02LT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified;
MGSF2P02HD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: .28 ohm; JESD-30 Code: R-PDSO-G6;
MGSF1N02ELT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: R-PDSO-G3; JESD-609 Code: e3;
MGSF2P02HDT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .21 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (Abs) (ID): 1.3 A;
MGSF1N02LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Package Style (Meter): SMALL OUTLINE;
MGSF1N03LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 30 V;
MGSF1P02LT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
MGSF1N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
MGSF1N02LT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Moisture Sensitivity Level (MSL): 1;
MGSF1P02ELT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; No. of Terminals: 3; Peak Reflow Temperature (C): 235;
MGSF1N02ELT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e0; Additional Features: LOGIC LEVEL COMPATIBLE;
MGSF1N02ELT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Peak Reflow Temperature (C): 235; JESD-609 Code: e0;
MGSF1N02LT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: .09 ohm; Maximum Drain Current (ID): .75 A;
MGSF1P02ELT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; No. of Terminals: 3; No. of Elements: 1;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JEDEC-95 Code: TO-236AB; Terminal Finish: Tin/Lead (Sn/Pb);
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved