Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
MGSF1N02ELT3 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.085 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.
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Corohmni
Durable and lightweight material, ideal for small signal applications.
Offers low on-state resistance and high switching speeds.
Convenient design with integrated diode for reverse voltage protection.
Suitable for efficient switching applications.
Easy to mount on circuit boards, saving space and providing a clean layout.
Adequate breakdown voltage for reliable operation.
Standard shape for easy integration into various designs.
Allows for secure soldering to the circuit board.
Enhancement mode operation allows for easy control of the transistor.
Can handle moderate current loads.
Simple three-terminal design for easy connections.
Can dissipate heat effectively to prevent overheating.
Compact package style for space-constrained applications.
Reliable technology for efficient signal amplification and switching.
Can withstand high temperatures for extended operating conditions.
High-quality silicon material for improved performance and durability.
Provides excellent solderability and conductivity.
Low on-resistance for efficient power handling.
Dual terminal position for versatile connection options.
Can withstand high-temperature reflow soldering processes.
Small Signal Field Effect Transistors (FET) MGSF1N02ELT3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
MGSF1N02ELT3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WT
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
2N2222A
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
Nexperia
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
New Jersey Semiconductor Products
MBR0520LT1
Onsemi
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
SMBJ18CA
Brightking
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Semiconductor
Semitronics
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
2N7002
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
STM32F103C8T6
STMicroelectronics
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
Excel (Suzhou) Semiconductor
Vishay Telefunken
BSS84,215
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;
BSS84AKMB,315
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Package Style (Meter): CHIP CARRIER; JESD-30 Code: R-PBCC-N3;
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
2N7000
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .2 A;
FDC658AP
The Onsemi FDC658AP is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 4A ID and 0.05 ohm RDS(on), suitable for surface mount designs.
SI2319CDS-T1-GE3
Vishay Intertechnology
SI2319CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 40V breakdown voltage and 4.4A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.5W. The small outline package and -55 to 150°C operating temperature range make it suitable for various electronic designs.
BSS8402DW-7-F
Diodes Incorporated
BSS8402DW-7-F by Diodes Inc. is a small signal FET with N-channel and P-channel polarity. It has a min DS breakdown voltage of 60V and max drain current of 0.13A, making it suitable for switching applications. Its package style is small outline with gull wing terminals, and it operates in enhancement mode at temperatures up to 150°C.
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
BSS131E6327
Siemens
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
BSS138P
NXP Semiconductors
NXP Semiconductors' BSS138P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A ID. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. The transistor's package is surface mountable, with GULL WING terminals and a max drain-source on resistance of 1.6 ohm.
BSS308PEH6327XTSA1
Infineon Technologies
BSS308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2A ID. Ideal for small outline applications, it operates in enhancement mode with a max temperature of 150°C. Suitable for various electronic devices requiring high performance in compact designs.
ZXMP6A13FTA
Zetex Plc
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; No. of Terminals: 3; Minimum DS Breakdown Voltage: 60 V;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
SI2333CDS-T1-GE3
SI2333CDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 12V DS Breakdown Voltage, 7.1A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Suitable for surface mount designs with GULL WING terminals in a RECTANGULAR package shape.
2N7002DW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .115 A;
SI2319DS-T1-E3
SI2319DS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage and 2.3A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.082 ohm On Resistance. Suitable for surface mount, it has a max operating temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
STN3P6F6
STN3P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS breakdown voltage and 3A ID. It's used for switching applications in enhancement mode, featuring 0.16 ohm RDS(on) and built-in diode. The transistor has a GULL WING terminal form, operates in DUAL position, and can withstand peak reflow temp of 260°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
2N7000TA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
BSS84
Good-ark Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .13 A; Package Shape: RECTANGULAR;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MGSF1N03LT1G
MGSF1N03LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.6A, 0.1 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology, it offers reliable performance in small outline packages at up to 150°C.
MGSF1N02LT1G
MGSF1N02LT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.75A Drain Current, and 0.09 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
MGSF1N03LT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Drain Current (Abs) (ID): .75 A; Qualification: Not Qualified;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Transistor Application: SWITCHING; JESD-609 Code: e0;
MGSF1N03LT3G
MGSF1N03LT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. It is ideal for SWITCHING applications, featuring a max Drain Current of 1.6A and 0.1 ohm Drain-Source Resistance. This small outline transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
MGSF1P02LT1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Form: GULL WING; No. of Terminals: 3;
MGSF1P02LT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Qualification: Not Qualified;
MGSF2P02HD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: .28 ohm; JESD-30 Code: R-PDSO-G6;
MGSF1N02ELT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: R-PDSO-G3; JESD-609 Code: e3;
MGSF2P02HDT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .21 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Drain Current (Abs) (ID): 1.3 A;
MGSF1N02LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Package Style (Meter): SMALL OUTLINE;
MGSF1N03LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .42 W; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 30 V;
MGSF1P02LT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
MGSF1N03L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .73 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
MGSF1N02LT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Moisture Sensitivity Level (MSL): 1;
MGSF1P02ELT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; No. of Terminals: 3; Peak Reflow Temperature (C): 235;
MGSF1N02ELT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e0; Additional Features: LOGIC LEVEL COMPATIBLE;
MGSF1N02LT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: .09 ohm; Maximum Drain Current (ID): .75 A;
MGSF1P02ELT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; No. of Terminals: 3; No. of Elements: 1;
MGSF1N02ELT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
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