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SN7002WH6327XTSA1

Infineon Technologies

SN7002WH6327XTSA1 by Infineon Technologies

Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Arrow

USA . 69,000 parts In-Stock

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$0.030

69,000

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$0.030

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.055

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$0.045

10k+ parts

$0.041

9,000

-

$0.055

$0.045

$0.041

Verical

USA . 5,770 parts In-Stock

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$0.165

10k+ parts

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5,770

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$0.165

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Chip1Stop

Japan . 5,770 parts In-Stock

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$0.103

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5,770

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$0.103

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RS (Exports)

UK . 2,300 parts In-Stock

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$0.108

10k+ parts

$0.083

2,300

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$0.108

$0.083

Element14

Singapore . 1,605 parts In-Stock

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$0.214

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$0.087

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$0.066

1,605

-

$0.214

$0.087

$0.066

Farnell

UK . 755 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

$0.068

10k+ parts

$0.048

755

-

$0.130

$0.068

$0.048

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 293 parts In-Stock

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$0.034

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293

$0.034

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Nova Conductors

Japan . 10 parts In-Stock

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$0.090

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10

$0.090

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TME

Poland . 77 parts In-Stock

1+ parts

$0.360

100+ parts

$0.106

1k+ parts

$0.071

10k+ parts

$0.068

77

$0.360

$0.106

$0.071

$0.068

Vyrian

USA . 29,289 parts In-Stock

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29,289

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IBS Electronics

USA . 18,000 parts In-Stock

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Chip Stock

USA . 6,290 parts In-Stock

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6,290

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Rutronik

Germany . 3,000 parts In-Stock

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$0.037

3,000

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$0.037

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 29,659 parts In-Stock

1+ parts

$0.029

100+ parts

$0.028

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$0.028

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29,659

$0.029

$0.028

$0.028

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Ampacity Inc.

Singapore . 29,418 parts In-Stock

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$0.029

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29,418

$0.029

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Corphita

USA . 482 parts In-Stock

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$0.032

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482

$0.032

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Argo Parts USA

USA . 1,325 parts In-Stock

1+ parts

$0.084

100+ parts

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10k+ parts

$0.081

1,325

$0.084

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-

$0.081

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.090

100+ parts

$0.086

1k+ parts

$0.081

10k+ parts

$0.080

100

$0.090

$0.086

$0.081

$0.080

Continental Prestige Electronics

USA . 5,170 parts In-Stock

1+ parts

$0.343

100+ parts

$0.127

1k+ parts

$0.065

10k+ parts

$0.044

5,170

$0.343

$0.127

$0.065

$0.044

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.409

100+ parts

$0.372

1k+ parts

$0.335

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-

350

$0.409

$0.372

$0.335

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Corohmni

South Africa . 6 parts In-Stock

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$1.025

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6

$1.025

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Modulus Dynamics

Lithuania . 15,877 parts In-Stock

1+ parts

$1.127

100+ parts

$1.082

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$1.037

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15,877

$1.127

$1.082

$1.037

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Aztec Data Supply Inc.

USA . 227 parts In-Stock

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$1.310

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Perfect Parts

USA . 252,058 parts In-Stock

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Glotronic Ltd.

UK . 9,600 parts In-Stock

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Robosynatics

Brazil . 8,453 parts In-Stock

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$0.304

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$0.298

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$0.298

8,453

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$0.304

$0.298

$0.298

Lucentia Tech

USA . 8,453 parts In-Stock

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$0.304

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$0.298

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$0.298

8,453

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$0.298

$0.298

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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GreenTree Electronics

Israel . 114 parts In-Stock

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114

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Speed Components Ltd (Excess)

Israel . 114 parts In-Stock

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114

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Overview

Discover the SN7002WH6327XTSA1 by Infineon Technologies, a high-quality Small Signal Field Effect Transistor (FET) designed to deliver exceptional performance in various applications. With its N-CHANNEL configuration and built-in diode, this transistor offers unparalleled versatility and reliability. Its compact shape and gull wing terminals make it easy to install and integrate into any project. Whether you're working on automotive electronics, industrial controls, or consumer appliances, the SN7002WH6327XTSA1 is the perfect choice. Experience the value and benefits of Infineon Technologies' cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and enhances the product's resistance to damage, making it a reliable choice.

Polarity or Channel Type: N-CHANNEL

With its N-channel polarity, this small signal FET allows for efficient flow of electrons, providing excellent performance in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The presence of a built-in diode in this FET simplifies circuit design and adds versatility, making it suitable for different electronic systems.

Surface Mount: YES

Being surface mount compatible, this FET offers ease of installation and reduces space requirements, making it convenient for compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this FET can handle high voltages safely, ensuring reliable operation even in demanding conditions.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient PCB layout and space utilization, making it suitable for applications where board real estate is at a premium.

Terminal Form: GULL WING

The gull wing terminal form enables secure soldering, ensuring a robust electrical connection, which enhances the overall performance and reliability of the product.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation of this FET allows for precise control and modulation of the electric current, making it highly desirable for signal amplification and switching applications.

No. of Elements: 1

With a single element, this FET simplifies circuit design and reduces complexity, promoting ease of use and ensuring consistent performance.

No. of Terminals: 3

Having three terminals enables flexible connections and allows for efficient control and integration within various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compact dimensions, making this FET suitable for space-constrained applications without compromising on performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology, this FET achieves high switching speeds, low power consumption, and excellent linearity for enhanced efficiency and performance.

Transistor Element Material: SILICON

The utilization of silicon as the transistor element material ensures high durability, reliability, and excellent thermal stability, making it a reliable choice for various applications.

Terminal Finish: TIN

The terminal finish with tin coating provides corrosion resistance and ensures reliable electrical connections, enhancing the overall longevity and performance of the product.

Maximum Drain Current (ID): 0.23 A

Boasting a maximum drain current of 0.23A, this FET can handle higher current loads, enabling it to support a wide range of applications.

Maximum Drain-Source On Resistance: 5 ohm

With a low drain-source on resistance of 5 ohms, this FET minimizes power losses, enhances efficiency, and amplifies signal fidelity, making it an optimal choice for signal processing applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and simplifies interconnections, ensuring ease of integration within electronic systems.

Moisture Sensitivity Level (MSL): 1

With an MSL of 1, this FET is highly resistant to moisture, making it suitable for use in various environments while maintaining long-term reliability.

Maximum Feedback Capacitance (Crss): 4.5 pF

Featuring a maximum feedback capacitance of 4.5 pF, this FET exhibits low input capacitance, enabling accurate signal processing and reducing the risk of signal distortion.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 standard, this FET meets automotive industry requirements for robustness, reliability, and high temperature operation, making it suitable for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SN7002WH6327XTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SN7002WH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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