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SN7002NH6433

Infineon Technologies

SN7002NH6433 by Infineon Technologies

Infineon's SN7002NH6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS(on). Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 71,057 parts In-Stock

1+ parts

$0.290

100+ parts

$0.124

1k+ parts

$0.060

10k+ parts

$0.039

71,057

$0.290

$0.124

$0.060

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$0.093

-

-

-

Digiode

USA . 501 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

-

501

$0.200

-

-

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Vyrian

USA . 80,195 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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80,195

-

-

-

-

Rutronik

Germany . 60,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.036

60,000

-

-

-

$0.036

ComSIT Distribution GmbH

Germany . 9,345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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9,345

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,860 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

$0.083

4,860

$0.085

-

-

$0.083

Argo Parts USA

USA . 1,512 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

$0.082

1,512

$0.085

-

-

$0.082

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.093

-

-

-

Ampacity Inc.

Singapore . 160,069 parts In-Stock

1+ parts

$0.178

100+ parts

-

1k+ parts

-

10k+ parts

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160,069

$0.178

-

-

-

Semicontronic

India . 78,581 parts In-Stock

1+ parts

$0.178

100+ parts

$0.174

1k+ parts

$0.173

10k+ parts

-

78,581

$0.178

$0.174

$0.173

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Corphita

USA . 366 parts In-Stock

1+ parts

$0.189

100+ parts

-

1k+ parts

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10k+ parts

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366

$0.189

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Aztec Data Supply Inc.

USA . 2,022 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

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10k+ parts

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2,022

$0.350

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-

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Modulus Dynamics

Lithuania . 2,252 parts In-Stock

1+ parts

$1.755

100+ parts

$1.685

1k+ parts

$1.615

10k+ parts

-

2,252

$1.755

$1.685

$1.615

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Corohmni

South Africa . 427 parts In-Stock

1+ parts

$1.757

100+ parts

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10k+ parts

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427

$1.757

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iodParts Technologies Inc.

India . 9,740 parts In-Stock

1+ parts

-

100+ parts

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9,740

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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6,000

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Overview

Unlock the power of cutting-edge technology with the SN7002NH6433 by Infineon Technologies. Designed with precision and expertise, this Small Signal Field Effect Transistor (FET) offers unparalleled performance and reliability. Whether you're looking to enhance your audio systems or optimize your automation controls, this N-CHANNEL transistor with a built-in diode is the perfect solution for your needs. With a maximum operating temperature of 150°C and a minimum breakdown voltage of 60V, this transistor ensures top-notch efficiency and durability. Elevate your projects with the SN7002NH6433 and experience the difference that quality and innovation can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body makes this FET lightweight and cost-effective.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher efficiency and lower ON resistance compared to P-channel FETs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse polarity, making it convenient for various applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and space in circuit designs.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages without breakdown, ensuring reliability in high-voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to position and mount on PCBs, improving assembly efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides a strong mechanical connection, reducing the risk of solder joint failure.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control of the ON/OFF state, facilitating precise regulation in various circuit designs.

No. of Elements: 1

This single-element FET simplifies circuit design and reduces complexity in system integration.

Maximum Drain Current (Abs) (ID): 0.2 A

With a maximum drain current of 0.2 A, this FET can handle moderate loads in various applications.

No. of Terminals: 3

The three terminals provide easy connectivity for input, output, and control signals, enhancing versatility in circuit configurations.

Maximum Power Dissipation (Abs): 0.36 W

The high maximum power dissipation ensures the FET can handle heat dissipation effectively, improving reliability in high-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low power consumption, ideal for applications requiring efficiency and speed.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon-based FETs offer high reliability, temperature stability, and efficiency, making them a preferred choice in various applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a durable and corrosion-resistant surface for soldering, ensuring long-term reliability in circuit connections.

Maximum Drain-Source On Resistance: 5 ohm

The low on-resistance minimizes power loss and improves efficiency in switching applications.

Terminal Position: DUAL

The dual terminal position allows for versatile PCB layouts and multiple connection options, enhancing flexibility in circuit design.

Maximum Feedback Capacitance (Crss): 4.2 pF

The low feedback capacitance helps reduce signal interference and improve high-frequency performance in signal processing applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SN7002NH6433 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.2 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SN7002NH6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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