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SN7002WH6433

Infineon Technologies

SN7002WH6433 by Infineon Technologies

Infineon's SN7002WH6433 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A max drain current, and 5 ohm max on resistance. Ideal for small outline packages in enhancement mode applications, it features a built-in diode and operates up to 150°C.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

$0.020

100+ parts

$0.020

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$0.020

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-

10,000

$0.020

$0.020

$0.020

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.067

100+ parts

-

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300

$0.067

-

-

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Digiode

USA . 990 parts In-Stock

1+ parts

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990

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Vyrian

USA . 909 parts In-Stock

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909

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Distributors (Availability)

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Argo Parts USA

USA . 4,000 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

$0.065

4,000

$0.067

-

-

$0.065

Continental Prestige Electronics

USA . 560 parts In-Stock

1+ parts

$0.067

100+ parts

-

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$0.066

560

$0.067

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-

$0.066

Corohmni

South Africa . 665 parts In-Stock

1+ parts

$0.688

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665

$0.688

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Modulus Dynamics

Lithuania . 15,311 parts In-Stock

1+ parts

$0.968

100+ parts

$0.929

1k+ parts

$0.891

10k+ parts

-

15,311

$0.968

$0.929

$0.891

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Aztec Data Supply Inc.

USA . 1,563 parts In-Stock

1+ parts

$1.940

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1,563

$1.940

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AZTECH Wire

Italy . 736 parts In-Stock

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$6.342

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736

$6.342

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Semicontronic

India . 1,016 parts In-Stock

1+ parts

$8.050

100+ parts

$7.849

1k+ parts

$7.808

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1,016

$8.050

$7.849

$7.808

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Ampacity Inc.

Singapore . 187 parts In-Stock

1+ parts

$8.050

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187

$8.050

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iodParts Technologies Inc.

India . 9,990 parts In-Stock

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9,990

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Component Stockers USA

USA . 7,801 parts In-Stock

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$0.070

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7,801

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$0.070

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.066

1k+ parts

$0.064

10k+ parts

$0.062

2,000

-

$0.066

$0.064

$0.062

Microchip USA

USA . 1,616 parts In-Stock

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1,616

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Corphita

USA . 503 parts In-Stock

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503

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Overview

Enhance your electronic designs with the SN7002WH6433 by Infineon Technologies, a high-quality N-channel small signal FET with a built-in diode. Designed for reliability and performance, this transistor offers a maximum drain current of 0.23A and a minimum DS breakdown voltage of 60V, making it ideal for a wide range of applications. Whether you're working on automotive, industrial, or consumer electronics projects, this enhancement mode transistor provides value and efficiency to meet your needs. Upgrade your designs today with the trusted manufacturer, Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good thermal stability, making the transistor reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and faster switching speeds, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode helps protect the transistor from reverse voltage spikes, enhancing its durability.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages without breakdown, ensuring safe operation.

Surface Mount: YES

Surface-mount packaging allows for easy and efficient integration into circuit boards, saving space and simplifying assembly.

Maximum Drain Current (Abs) (ID): 0.23 A

With a maximum drain current of 0.23A, this transistor can support moderate current loads in various applications.

Maximum Power Dissipation (Abs): 0.5 W

The transistor can dissipate up to 0.5W of power without overheating, ensuring stable performance under various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the transistor can withstand high temperatures without performance degradation.

Maximum Drain-Source On Resistance: 5 ohm

Low on-resistance of 5 ohms reduces power loss and improves efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 4.5 pF

Low feedback capacitance of 4.5 pF minimizes signal distortion and improves high-frequency performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) SN7002WH6433 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.23 A

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.5 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

SN7002WH6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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