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SN7002WL6433

Infineon Technologies

SN7002WL6433 by Infineon Technologies

Infineon's SN7002WL6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 5 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.5W.

Median Price

$0.047

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.047

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550

$0.047

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Vyrian

USA . 5,153 parts In-Stock

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5,153

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Digiode

USA . 341 parts In-Stock

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341

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ABC Electronics Ltd.

UK . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,147 parts In-Stock

1+ parts

$0.047

100+ parts

-

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$0.046

4,147

$0.047

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$0.046

Argo Parts USA

USA . 1,688 parts In-Stock

1+ parts

$0.047

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$0.046

1,688

$0.047

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$0.046

Modulus Dynamics

Lithuania . 5,743 parts In-Stock

1+ parts

$0.462

100+ parts

$0.444

1k+ parts

$0.425

10k+ parts

-

5,743

$0.462

$0.444

$0.425

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Aztec Data Supply Inc.

USA . 2,258 parts In-Stock

1+ parts

$1.104

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2,258

$1.104

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Corohmni

South Africa . 42 parts In-Stock

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$1.966

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42

$1.966

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AZTECH Wire

Italy . 581 parts In-Stock

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$13.856

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581

$13.856

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Ampacity Inc.

Singapore . 309 parts In-Stock

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$48.050

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309

$48.050

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Corphita

USA . 768 parts In-Stock

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768

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Netroflash

USA . 100 parts In-Stock

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100+ parts

$0.046

1k+ parts

$0.045

10k+ parts

$0.044

100

-

$0.046

$0.045

$0.044

Overview

Upgrade your electronic designs with the SN7002WL6433 from Infineon Technologies. Known for their top-notch quality and reliability, Infineon brings you a Small Signal Field Effect Transistor that offers high performance in a compact package. With N-CHANNEL polarity, SINGLE configuration with BUILT-IN DIODE, and ENHANCEMENT MODE operation, this FET is perfect for a wide range of applications. Whether you're working on consumer electronics, industrial equipment, or automotive systems, this transistor's 60V minimum DS Breakdown Voltage, low power dissipation, and 5 ohm maximum Drain-Source On Resistance provide exceptional value and efficiency. Trust Infineon to deliver cutting-edge technology for all your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the transistor, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and faster switching speeds compared to P-channel transistors, making this product suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for better voltage regulation and protection against reverse polarity, improving the overall performance and reliability of the transistor.

Surface Mount: YES

Being surface mountable makes it easy to integrate this transistor into compact electronic devices, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can safely handle high voltages, making it suitable for a wide range of electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and alignment during assembly, reducing the chances of misalignment and improving overall performance.

Terminal Form: GULL WING

The gull wing terminal form provides strong solder joints and reliable connections, ensuring the stability and longevity of the transistor in various operating conditions.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for efficient and precise control over the transistor's conductivity, making it suitable for applications that require accurate voltage regulation.

Maximum Drain Current (Abs) (ID): 0.23 A

With a maximum drain current of 0.23A, this transistor can handle moderate current loads, making it suitable for low to medium power applications.

No. of Terminals: 3

Having 3 terminals allows for easy and flexible circuit connections, enabling versatile usage in various electronic circuits and systems.

Maximum Power Dissipation (Abs): 0.5 W

The maximum power dissipation of 0.5W indicates the amount of heat the transistor can handle without compromising its performance, ensuring reliable operation even under high load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs, making this transistor ideal for portable and space-constrained electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology offers high electron mobility and low power consumption, enhancing the efficiency and performance of the transistor in various applications.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C ensures that the transistor can withstand high temperatures, making it suitable for industrial and automotive applications where heat dissipation is crucial.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, making this transistor a durable and long-lasting choice for electronic circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures strong solder connections, improving the overall reliability and longevity of the transistor in various environments.

Maximum Drain-Source On Resistance: 5 ohm

With a low drain-source on resistance of 5 ohms, this transistor offers efficient current flow and minimal power loss, making it suitable for high-performance applications that require low conduction losses.

Terminal Position: DUAL

Having dual terminal positions allows for flexible circuit configurations and compatibility with various circuit layouts, making this transistor versatile and easy to integrate into different electronic systems.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C indicates the maximum temperature at which the transistor can be soldered without damaging its internal components, ensuring reliable assembly and soldering processes.

Maximum Feedback Capacitance (Crss): 4.5 pF

The low feedback capacitance of 4.5 pF minimizes signal distortion and improves high-frequency performance, making this transistor suitable for fast-switching and high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SN7002WL6433 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.23 A

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.5 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SN7002WL6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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