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SI1865DL-T1-GE3

Vishay Intertechnology

SI1865DL-T1-GE3 by Vishay Intertechnology

SI1865DL-T1-GE3 by Vishay Intertechnology is a P-channel FET with 2 elements and 6 terminals. Operating in enhancement mode, it has a max temp of 150°C and 0.215 ohm RDS(on). Ideal for switching applications, this MOSFET features a small outline package with gull wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,961 parts In-Stock

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2,961

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Nova Conductors

Japan . 55 parts In-Stock

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55

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Distributors (Availability)

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AZTECH Wire

Italy . 516 parts In-Stock

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$9.152

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516

$9.152

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Ampacity Inc.

Singapore . 918 parts In-Stock

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$14.050

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918

$14.050

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Argo Parts USA

USA . 2,987 parts In-Stock

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2,987

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Continental Prestige Electronics

USA . 2,746 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Discover the superior quality and performance of the SI1865DL-T1-GE3 by Vishay Intertechnology. Designed for small signal applications, this P-channel FET offers reliable switching capabilities in a compact package. With a durable plastic/epoxy body and advanced metal-oxide semiconductor technology, this transistor ensures efficient operation at temperatures up to 150°C. Whether you're looking to enhance your electronic devices or optimize power management systems, this transistor delivers unmatched value and versatility. Upgrade your projects with the SI1865DL-T1-GE3 and experience the benefits of Vishay Intertechnology's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching and control of current flow, making it suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and functionality.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving space and simplifying assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low output impedance, enhancing overall performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for use in a variety of environments and applications.

Maximum Drain-Source On Resistance: 0.215 ohm

Low on-resistance means minimal power loss and improved efficiency in switching operations.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1865DL-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

ESD PROTECTION

Configuration:

Maximum Drain-Source On Resistance:

.215 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI1865DL-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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