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6HP04MH-TL-W

Onsemi

6HP04MH-TL-W by Onsemi

6HP04MH-TL-W by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode and resistor, suitable for surface mount applications. With 0.37A ID and 4.2Ω RDS(on), it's ideal for small outline packages in enhancement mode circuits.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 127,571 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.091

10k+ parts

$0.082

127,571

-

$0.110

$0.091

$0.082

Verical

USA . 126,000 parts In-Stock

1+ parts

-

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$0.102

126,000

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$0.102

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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Distributors (In-Stock)

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Digiode

USA . 2,102 parts In-Stock

1+ parts

$0.090

100+ parts

-

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2,102

$0.090

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-

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Chip Stock

USA . 39,000 parts In-Stock

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39,000

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Vyrian

USA . 4,440 parts In-Stock

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4,440

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,247 parts In-Stock

1+ parts

$0.081

100+ parts

-

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-

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2,247

$0.081

-

-

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Corphita

USA . 1,492 parts In-Stock

1+ parts

$0.086

100+ parts

-

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1,492

$0.086

-

-

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Corohmni

South Africa . 214 parts In-Stock

1+ parts

$0.095

100+ parts

-

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214

$0.095

-

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Component Stockers USA

USA . 1,815 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

1,815

$0.100

$0.090

$0.080

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AZTECH Wire

Italy . 363 parts In-Stock

1+ parts

$18.510

100+ parts

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363

$18.510

-

-

-

Native Components

USA . 206 parts In-Stock

1+ parts

$420.150

100+ parts

$411.747

1k+ parts

$407.545

10k+ parts

$403.344

206

$420.150

$411.747

$407.545

$403.344

Northwest PG Solutions

USA . 1,326 parts In-Stock

1+ parts

$462.165

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1,326

$462.165

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QUARKTWIN TECHNOLOGY LTD

USA . 16,000 parts In-Stock

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RC Electronics

USA . 10,800 parts In-Stock

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10,800

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,962 parts In-Stock

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7,962

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Kulean Microsystems

USA . 5,776 parts In-Stock

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5,776

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TANS Electronics

Latvia . 5,674 parts In-Stock

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5,674

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SupplyDigital Components

Austria . 3,058 parts In-Stock

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3,058

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UHIMA Technologies

Türkiye . 240 parts In-Stock

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240

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Overview

Elevate your electronic designs with the 6HP04MH-TL-W by Onsemi. Crafted with precision and expertise, this small signal Field Effect Transistor offers unparalleled quality and reliability. Ideal for a variety of applications, this P-Channel FET boasts a built-in diode and resistor, enhancing its functionality. With a low power dissipation and high breakdown voltage, this transistor delivers exceptional performance while maximizing efficiency. Trust Onsemi to provide cutting-edge technology that pushes boundaries and exceeds expectations. Experience the difference with the 6HP04MH-TL-W.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: P-CHANNEL

This type of channel allows for efficient current control and operation in specific circuit configurations.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Having a built-in diode and resistor simplifies circuit design and can save space on the PCB.

Surface Mount: YES

Surface mount compatibility makes it easy to integrate this transistor into compact electronic devices.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control and modulation of the transistor's conduction, offering flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.6 W

The low power dissipation helps in maintaining the temperature of the transistor within permissible limits, enhancing its lifespan.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers good performance characteristics such as high input impedance and low input current, making it suitable for many applications.

Maximum Drain Current (ID): 0.37 A

The high maximum drain current rating allows the transistor to handle higher current loads without overheating or damage.

Maximum Drain-Source On Resistance: 4.2 ohm

A low drain-source on resistance means the transistor experiences less power loss and operates more efficiently.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process during assembly without degradation.

Maximum Feedback Capacitance (Crss): 4.1 pF

Low feedback capacitance helps in reducing noise and interference in the circuit, leading to better signal integrity.

Technical Specifications

Small Signal Field Effect Transistors (FET) 6HP04MH-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.37 A

Maximum Drain-Source On Resistance:

4.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.1 pF

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

6HP04MH-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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