Loading...

6HP04MH

Onsemi

6HP04MH by Onsemi

6HP04MH by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.37A ID, and 4.2 ohm RDS(ON). It's used in Enhancement Mode applications due to its built-in diode and resistor, making it ideal for small outline packages in surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,503 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,503

-

-

-

-

Vyrian

USA . 1,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,423

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 184 parts In-Stock

1+ parts

$310.625

100+ parts

$304.412

1k+ parts

$301.306

10k+ parts

$298.200

184

$310.625

$304.412

$301.306

$298.200

Northwest PG Solutions

USA . 1,725 parts In-Stock

1+ parts

$341.688

100+ parts

-

1k+ parts

-

10k+ parts

-

1,725

$341.688

-

-

-

Kepictronics

USA . 71,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

71,000

-

-

-

-

TANS Electronics

Latvia . 6,522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,522

-

-

-

-

SupplyDigital Components

Austria . 6,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,140

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Problanco Electronics

Mexico . 2,409 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,409

-

-

-

-

Kulean Microsystems

USA . 2,189 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,189

-

-

-

-

Corphita

USA . 1,752 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,752

-

-

-

-

UHIMA Technologies

Türkiye . 373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

373

-

-

-

-

Corohmni

South Africa . 312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

312

-

-

-

-

Overview

Experience the superior quality and reliability of Onsemi with the 6HP04MH small signal field effect transistor. This P-channel transistor offers a single configuration with a built-in diode and resistor, making it perfect for a variety of applications. With its high breakdown voltage and low power dissipation, this transistor delivers exceptional performance while maximizing efficiency. Trust Onsemi to provide innovative solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, ensuring a long lifespan and reliable performance.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance and low input capacitance, making them suitable for low-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB, making this transistor a convenient choice for compact electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto the PCB, saving time and effort during manufacturing.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage of 60V ensures that the transistor can handle a wide range of voltages, making it versatile for various applications.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to mount and solder onto the PCB, providing a secure and stable connection.

Terminal Form: FLAT

Flat terminals make it easy to make proper connections and ensure good thermal conductivity, enhancing the overall performance of the transistor.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the output signal, providing efficient and precise operation in various circuits.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into circuits, offering flexibility in circuit design and functionality.

Maximum Power Dissipation (Abs): 0.6 W

The high maximum power dissipation of 0.6W allows the transistor to handle higher power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices or applications where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance, low noise, and low leakage current, making this transistor reliable and efficient for various applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing consistent performance and durability for long-term use.

Maximum Drain Current (ID): 0.37 A

The high maximum drain current of 0.37A allows the transistor to handle higher current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 4.2 ohm

The low drain-source on resistance of 4.2 ohms ensures minimal power loss and high efficiency in the transistor's operation.

Terminal Position: DUAL

Dual terminal position allows for easy connections and flexibility in circuit design, enhancing the versatility of the transistor.

Maximum Feedback Capacitance (Crss): 4.1 pF

The low feedback capacitance of 4.1pF minimizes signal distortion and improves high-frequency performance, making the transistor ideal for high-speed applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 6HP04MH attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.37 A

Maximum Drain-Source On Resistance:

4.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

4.1 pF

JESD-30 Code:

R-PDSO-F3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

6HP04MH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8