Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTHD5903T1G
Onsemi
NTHD5903T1G by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 2.2A, on-resistance of 0.155 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 2.1W power dissipation at a max temp of 150 °C, making it suitable for various electronic circuits.
LOGIC LEVEL COMPATIBLE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
2.2 A
.155 ohm
METAL-OXIDE SEMICONDUCTOR
R-XDSO-C8
e3
1
2
8
ENHANCEMENT MODE
150 Cel
UNSPECIFIED
RECTANGULAR
SMALL OUTLINE
260
P-CHANNEL
2.1 W
Not Qualified
Other Transistors
YES
TIN
C BEND
DUAL
30
SWITCHING
SILICON
NTHS5404T1G
NTHS5404T1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 5.2A ID, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This RECTANGULAR package has 8 terminals and built-in DIODE, making it suitable for high-power circuits.
SINGLE WITH BUILT-IN DIODE
5.2 A
.03 ohm
N-CHANNEL
.7 W
FET General Purpose Power
MATTE TIN
NTHS5441T1G
NTHS5441T1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 3.9A Drain Current, and 0.06 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.
3.9 A
.06 ohm
1.3 W
NTR4502PT3G
NTR4502PT3G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 1.95A and 0.2 ohm RDS(on), operating in enhancement mode at up to 150 °C. This small outline transistor with GULL WING terminals is designed for surface mount configurations.
30 V
1.95 A
.2 ohm
TO-236AB
R-PDSO-G3
3
PLASTIC/EPOXY
.4 W
GULL WING
BFR30LT1G
BFR30LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 1.5pF Crss feedback capacitance. The transistor has a max power dissipation of 0.3W and can operate at temperatures up to 150°C.
SINGLE
25 V
JUNCTION
1.5 pF
DEPLETION MODE
.3 W
Tin (Sn)
40
AMPLIFIER
BS107AG
BS107AG by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage, 0.25A Drain Current, and 6.4 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE. Package style is CYLINDRICAL with THROUGH-HOLE terminals.
200 V
.25 A
6.4 ohm
TO-226AA
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.35 W
NO
Tin/Silver/Copper (Sn/Ag/Cu)
THROUGH-HOLE
BOTTOM
BS107ARL1G
BS107ARL1G by Onsemi is a N-CHANNEL FET with 200V DS Breakdown Voltage. It's used for SWITCHING applications, operating in ENHANCEMENT MODE with 0.25A Drain Current. The transistor has a Max Power Dissipation of 0.35W and Max Operating Temperature of 150°C.
NTA4151PT1
NTA4151PT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.54A Drain Current, and 0.36 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals. The transistor operates at up to 150 °C and has a max power dissipation of 0.15W in a SMALL OUTLINE package.
.54 A
.76 A
.36 ohm
e0
235
.15 W
TIN LEAD
NTR0202PLT3G
NTR0202PLT3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.4A Drain Current, and 0.8 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150 °C.
.4 A
.8 ohm
.225 W
NTR4503NT3G
NTR4503NT3G by Onsemi is a small signal FET with N-channel polarity and single configuration. It has a min DS breakdown voltage of 30V, max drain current of 2A, and max power dissipation of 0.73W. Ideal for switching applications, this MOSFET operates in enhancement mode with a max operating temperature of 150 °C.
2 A
1.5 A
.11 ohm
25 pF
.73 W
NUD3124LT1G
NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
28 V
.15 A
1.4 ohm
Matte Tin (Sn) - annealed
MMBF5460LT1G
MMBF5460LT1G by Onsemi is a P-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max temp of 150 °C and feedback capacitance of 2pF. Ideal for AMPLIFIER applications due to its small outline package and SILICON material technology.
2 pF
FET General Purpose Small Signal
MMFT960T1G
MMFT960T1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and power dissipation of 0.8W, it offers reliable performance in small outline packages at temperatures up to 150 °C.
DRAIN
60 V
.3 A
1.7 ohm
TO-261AA
R-PDSO-G4
4
.8 W
VN2222LLRLRAG
VN2222LLRLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.15A Drain Current, 7.5 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 0.4W and peak reflow temperature of 260 °C, it offers reliable performance in various electronic circuits.
7.5 ohm
5 pF
TO-92
TIN SILVER COPPER
NTHD5904NT1
NTHD5904NT1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 3.3A, Min DS Breakdown Voltage of 20V, and Max Power Dissipation of 1.13W. Its small outline package style & max operating temp of 150 °C make it suitable for various electronic designs.
3.3 A
2.5 A
.065 ohm
1.13 W
NTHD5904NT3
NTHD5904NT3 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.3A Drain Current, 0.065 ohm On Resistance. Operates in ENHANCEMENT MODE up to 150 °C, with small outline package & tin lead finish.
NUD3105LT1G
NUD3105LT1G by Onsemi is a N-CHANNEL FET with 6V DS breakdown voltage, 0.5A ID, and 1.3 ohm RDS(on). Ideal for switching applications, it features a built-in diode and resistor in a small outline package for surface mount assembly. Operating at up to 150°C, it uses metal-oxide semiconductor technology with matte tin finish.
6 V
.5 A
1.3 ohm
TO-236
NTJS3157NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; No. of Terminals: 6; Terminal Form: GULL WING;
3.2 A
R-PDSO-G6
6
1 W
NTJS3157NT4
NTJS3157NT4 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1W and can withstand temperatures up to 150 °C.
NTMFS4708NT1G
NTMFS4708NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.8A ID, and 0.01 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style.
7.8 A
.01 ohm
R-PDSO-F5
5
FLAT
BFR31LT1G
BFR31LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features GULL WING terminals, operates in DEPLETION MODE, and has a max power dissipation of 0.3W. This SMALL OUTLINE transistor has a peak reflow temperature of 260°C and feedback capacitance of 1.5pF.
NTJS3157NT2G
NTJS3157NT2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage and 3.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150°C, this MOSFET has 0.06 ohm On Resistance and Matte Tin Terminal Finish.
NTJS3157NT2
NTJS3157NT2 by Onsemi is a small signal N-channel FET with a min DS breakdown voltage of 20V. It is commonly used for switching applications due to its single configuration with built-in diode and max drain current of 3.2A.
NTJS3151PT2
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Maximum Drain-Source On Resistance: .06 ohm; Terminal Form: GULL WING;
12 V
2.7 A
.625 W
NTMFS4119NT3G
NTMFS4119NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 18A Drain Current, and 0.0035 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150 °C max operating temp.
18 A
11 A
.0035 ohm
6.1 W
NTS2101PT1
NTS2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS breakdown voltage and 3.7A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.96W. This small outline transistor has a 0.1 ohm on resistance and can withstand temperatures up to 150 °C.
8 V
3.7 A
1.4 A
.1 ohm
.96 W
Tin/Lead (Sn80Pb20)
NOT SPECIFIED
J110G
J110G by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a Max Power Dissipation of 0.31W and Max Drain-Source On Resistance of 18Ω. Ideal for SWITCHING applications due to its high feedback capacitance and low on resistance.
18 ohm
15 pF
135 Cel
.31 W
BS170RLRAG
BS170RLRAG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.5A Drain Current, and 5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.
5 ohm
MMBF5457LT1G
MMBF5457LT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It features DEPLETION MODE operation, GULL WING terminals, and 3pF Crss. With a max power dissipation of 0.225W and operating temperature up to 150°C, it is suitable for small outline packages in electronic circuits.
3 pF
NTQD6866R2G
NTQD6866R2G by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style, operating at up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.9 A
4.7 A
.032 ohm
175 pF
R-PDSO-G8
.78 W
NTTD4401FR2G
NTTD4401FR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.4A, 0.09 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150 °C operating temperature.
2.4 A
.09 ohm
1.42 W
NTMFS4121NT1G
NTMFS4121NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 17A Drain Current, and 0.00525 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY, Surface Mountable, Operating in ENHANCEMENT MODE.
17 A
.00525 ohm
6.6 W
NTMFS4701NT1G
NTMFS4701NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.7A ID, and 0.008 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE with built-in DIODE. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and operates in DUAL terminal position.
7.7 A
.008 ohm
NTMFS4707NT3G
NTMFS4707NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 6.9A ID, and 0.013 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates in SURFACE MOUNT package style.
.013 ohm
NTMS4706NR2
NTMS4706NR2 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 6.4A ID, and 0.012 ohm RDS(on). It is used for switching applications in enhancement mode with built-in diode. This small outline transistor has GULL WING terminals and operates in surface mount configuration.
6.4 A
.012 ohm
NTR2101PT1
NTR2101PT1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.7A ID, and 0.052 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals, operates up to 150 °C, and has a power dissipation of 0.96W.
.052 ohm
NTR1P02T3G
NTR1P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.
1 A
.18 ohm
Matte Tin (Sn)
NTTS2P03R2G
NTTS2P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.1A Drain Current. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology. With a max temp of 150 °C, it has a small outline package style for efficient performance.
2.1 A
.085 ohm
S-PDSO-G8
SQUARE
1.78 W
2N5457G
2N5457G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 3 terminals and 0.31W power dissipation. With a max operating temperature of 150°C, it features a feedback capacitance of 3pF and uses Tin/Silver/Copper terminal finish.
LOW NOISE
2N5638RLRAG
2N5638RLRAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 30 ohm Max RDS. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.31W Power Dissipation. Its ROUND package style and SILICON material make it suitable for various electronic circuits.
30 ohm
4 pF
2N5639RLRAG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JESD-609 Code: e1; No. of Terminals: 3;
60 ohm
BS108ZL1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 200 V; No. of Elements: 1;
8 ohm
10 pF
BS170RL1G
BS170RL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
EUROPEAN PART NUMBER
BS170RLRMG
BS170RLRMG by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
BS170ZL1G
BS170ZL1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor can handle up to 0.35W power dissipation at 150 °C.
BSR58LT1G
BSR58LT1G by Onsemi is a N-CHANNEL FET with 3 terminals in a small outline package. Operating in depletion mode, it has a max power dissipation of 0.35W and drain-source resistance of 60 ohm. Ideal for chopper applications, this transistor can withstand up to 150°C operating temperature.
CHOPPER
J110RLRAG
Onsemi's J110RLRAG is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.31W and a max drain-source on resistance of 18 ohm. Ideal for SWITCHING applications due to its high feedback capacitance of 15pF and peak reflow temperature of 260°C.
J111RL1G
J111RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max on resistance of 30 ohm, it has a feedback capacitance of 5pF and uses silicon as the transistor element material.
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