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NTMFS4708NT1G

Onsemi

NTMFS4708NT1G by Onsemi

NTMFS4708NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 7.8A ID, and 0.01 ohm RDS(ON). Ideal for SWITCHING applications due to ENHANCEMENT MODE operation. Features include SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package style.

Median Price

$0.280

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 64,433 parts In-Stock

1+ parts

-

100+ parts

$0.291

1k+ parts

$0.241

10k+ parts

$0.215

64,433

-

$0.291

$0.241

$0.215

Verical

USA . 49,500 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.269

49,500

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-

-

$0.269

Distributors (In-Stock)

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Digiode

USA . 896 parts In-Stock

1+ parts

$0.226

100+ parts

-

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896

$0.226

-

-

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Vyrian

USA . 5,111 parts In-Stock

1+ parts

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5,111

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Cyclops Electronics Ltd

UK . 2,540 parts In-Stock

1+ parts

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2,540

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4 Star Electronics, Inc.

USA . 590 parts In-Stock

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590

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Component Electronics Inc.

Canada . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 59,441 parts In-Stock

1+ parts

$0.202

100+ parts

-

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59,441

$0.202

-

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Corphita

USA . 1,901 parts In-Stock

1+ parts

$0.214

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1,901

$0.214

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Corohmni

South Africa . 54 parts In-Stock

1+ parts

$0.238

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54

$0.238

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Component Stockers USA

USA . 69,393 parts In-Stock

1+ parts

$0.240

100+ parts

$0.230

1k+ parts

$0.210

10k+ parts

$0.210

69,393

$0.240

$0.230

$0.210

$0.210

AZTECH Wire

Italy . 230 parts In-Stock

1+ parts

$22.040

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230

$22.040

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Continental Prestige Electronics

USA . 64,433 parts In-Stock

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100+ parts

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1k+ parts

$0.219

10k+ parts

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64,433

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$0.219

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Problanco Electronics

Mexico . 8,024 parts In-Stock

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SupplyDigital Components

Austria . 7,681 parts In-Stock

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7,681

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Kulean Microsystems

USA . 4,290 parts In-Stock

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TANS Electronics

Latvia . 3,651 parts In-Stock

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Kepictronics

USA . 3,040 parts In-Stock

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3,040

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 785 parts In-Stock

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785

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Futuretech Components

Singapore . 506 parts In-Stock

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506

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GreenTree Electronics

Israel . 155 parts In-Stock

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155

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Overview

Enhance your electronic devices with the NTMFS4708NT1G by Onsemi, a top-quality N-CHANNEL Small Signal Field Effect Transistor with a built-in diode for efficient switching applications. Manufactured by Onsemi, this FET offers reliability and superior performance. Perfect for a wide range of applications, this product provides value through its high drain current and low on-resistance. Upgrade your designs with the NTMFS4708NT1G and experience the benefits of enhanced functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient flow of electrons in the channel, enhancing overall performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified design with a built-in diode for additional circuit protection and functionality.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast and reliable performance.

Surface Mount: YES

Enables easy and compact integration into circuit boards.

Minimum DS Breakdown Voltage: 30 V

Withstands voltages up to 30V, making it suitable for various electronic applications.

Package Shape: RECTANGULAR

Efficient use of space on circuit boards, allowing for compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable performance with low power consumption.

Maximum Drain Current (ID): 7.8 A

Capable of handling high current loads, suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.01 ohm

Low on-resistance ensures minimal power loss and efficient operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS4708NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

7.8 A

Maximum Drain-Source On Resistance:

.01 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMFS4708NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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