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NTMFS4C10NT1G-001

Onsemi

NTMFS4C10NT1G-001 by Onsemi

NTMFS4C10NT1G-001 by Onsemi is a N-CHANNEL FET with 46A max drain current and 23.6W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various surface-mount designs.

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 668,206 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.196

668,206

-

$0.264

$0.219

$0.196

DigiKey

USA . 668,206 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.330

10k+ parts

-

668,206

-

-

$0.330

-

Farnell

UK . 668,206 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.316

668,206

-

-

-

$0.316

Verical

USA . 668,206 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.244

668,206

-

-

-

$0.244

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 33 parts In-Stock

1+ parts

$0.193

100+ parts

-

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-

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33

$0.193

-

-

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Digiode

USA . 1,381 parts In-Stock

1+ parts

$0.206

100+ parts

-

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1,381

$0.206

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-

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Vyrian

USA . 405 parts In-Stock

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405

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Distributors (Availability)

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Ampacity Inc.

Singapore . 668,082 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

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668,082

$0.184

-

-

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Semicontronic

India . 668,023 parts In-Stock

1+ parts

$0.184

100+ parts

$0.179

1k+ parts

$0.178

10k+ parts

-

668,023

$0.184

$0.179

$0.178

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Corohmni

South Africa . 351 parts In-Stock

1+ parts

$0.190

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351

$0.190

-

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Argo Parts USA

USA . 2,619 parts In-Stock

1+ parts

$0.193

100+ parts

-

1k+ parts

-

10k+ parts

$0.187

2,619

$0.193

-

-

$0.187

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.193

100+ parts

-

1k+ parts

$0.184

10k+ parts

$0.180

1,000

$0.193

-

$0.184

$0.180

Corphita

USA . 662 parts In-Stock

1+ parts

$0.195

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662

$0.195

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Aztec Data Supply Inc.

USA . 450 parts In-Stock

1+ parts

$0.370

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450

$0.370

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AZTECH Wire

Italy . 405 parts In-Stock

1+ parts

$17.320

100+ parts

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405

$17.320

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Continental Prestige Electronics

USA . 668,206 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.199

10k+ parts

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668,206

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-

$0.199

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

-

-

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TANS Electronics

Latvia . 4,893 parts In-Stock

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4,893

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-

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SupplyDigital Components

Austria . 3,899 parts In-Stock

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3,899

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Problanco Electronics

Mexico . 3,607 parts In-Stock

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3,607

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Kulean Microsystems

USA . 386 parts In-Stock

1+ parts

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386

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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246

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Overview

Unleash the power of innovation with the NTMFS4C10NT1G-001 by Onsemi. As a leading manufacturer in the small signal field effect transistors category, Onsemi delivers unparalleled quality and reliability in every product. Ideal for a wide range of applications, this N-CHANNEL FET offers customers the value of high performance and efficiency. With a maximum drain current of 46A and a maximum power dissipation of 23.6W, this transistor is designed to meet the demands of modern electronics. Elevate your projects with the NTMFS4C10NT1G-001 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and higher efficiency compared to P-channel FETs, making this product a good choice for various applications.

Configuration: SINGLE

Single configuration FETs are easy to integrate into circuits and provide simple control, making this product suitable for straightforward applications.

Surface Mount: YES

Surface mount FETs save space on circuit boards and enable automated assembly, making this product ideal for compact and mass-produced electronic devices.

Maximum Drain Current (Abs): 46 A

High maximum drain current capacity allows for handling of heavy loads and high-power applications, making this product suitable for demanding circuits.

Maximum Power Dissipation (Abs): 23.6 W

High power dissipation capability ensures the FET can handle high power levels without overheating, making it reliable for continuous operation in various conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics and reliability, making this product a dependable choice for electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation, making it suitable for applications where heat dissipation is a concern.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS4C10NT1G-001 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

46 A

Maximum Drain Current (ID):

46 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

NTMFS4C10NT1G-001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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