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NTMFS4121NT1G

Onsemi

NTMFS4121NT1G by Onsemi

NTMFS4121NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 17A Drain Current, and 0.00525 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Package: PLASTIC/EPOXY, Surface Mountable, Operating in ENHANCEMENT MODE.

Median Price

$0.444

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 728,470 parts In-Stock

1+ parts

-

100+ parts

$0.436

1k+ parts

$0.362

10k+ parts

$0.323

728,470

-

$0.436

$0.362

$0.323

Verical

USA . 316,500 parts In-Stock

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-

100+ parts

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$0.452

10k+ parts

$0.403

316,500

-

-

$0.452

$0.403

Distributors (In-Stock)

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Digiode

USA . 2,493 parts In-Stock

1+ parts

$0.339

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2,493

$0.339

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Chip Stock

USA . 70,000 parts In-Stock

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70,000

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Vyrian

USA . 12,300 parts In-Stock

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12,300

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Distributors (Availability)

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Corphita

USA . 1,101 parts In-Stock

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$0.321

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-

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1,101

$0.321

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Corohmni

South Africa . 323 parts In-Stock

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$0.357

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323

$0.357

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AZTECH Wire

Italy . 71 parts In-Stock

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$18.090

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71

$18.090

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Continental Prestige Electronics

USA . 728,470 parts In-Stock

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$0.328

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728,470

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$0.328

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QUARKTWIN TECHNOLOGY LTD

USA . 15,238 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,939 parts In-Stock

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5,939

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Kulean Microsystems

USA . 4,488 parts In-Stock

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SupplyDigital Components

Austria . 4,414 parts In-Stock

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RC Electronics

USA . 3,060 parts In-Stock

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Problanco Electronics

Mexico . 2,292 parts In-Stock

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TANS Electronics

Latvia . 514 parts In-Stock

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514

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Metaverse IC Inc.

Canada . 497 parts In-Stock

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UHIMA Technologies

Türkiye . 264 parts In-Stock

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264

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Overview

Upgrade your electronic devices with the NTMFS4121NT1G by Onsemi, a top-quality N-CHANNEL Field Effect Transistor. Manufactured by Onsemi, this transistor offers reliable performance and durability. Ideal for switching applications, this transistor features a built-in diode for added convenience. With a maximum drain current of 17A and a low on-resistance of 0.00525 ohm, this transistor provides efficient power management. Trust Onsemi for cutting-edge technology and superior products that enhance your electronic designs. Elevate your projects with the NTMFS4121NT1G and experience unmatched performance and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer better performance and higher efficiency compared to P-channel transistors, making them suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and low power consumption, making it ideal for use in electronic devices.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages without failure, offering protection against voltage spikes and surges.

Maximum Drain Current (ID): 11 A

With a high maximum drain current of 11A, this transistor can handle larger loads and deliver high performance in demanding applications.

Maximum Power Dissipation (Abs): 6.6 W

The high power dissipation capability of 6.6W ensures that the transistor can operate efficiently and reliably without overheating, even under high loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers improved performance and efficiency, making this transistor a reliable choice for various electronic applications.

Maximum Drain-Source On Resistance: 0.00525 ohm

With a low drain-source on resistance, this transistor minimizes power losses and heat generation, resulting in improved efficiency and performance.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring reliable solder connections during manufacturing.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS4121NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

17 A

Maximum Drain Current (ID):

11 A

Maximum Drain-Source On Resistance:

.00525 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMFS4121NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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