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NTMFS006N12MC

Onsemi

NTMFS006N12MC by Onsemi

NTMFS006N12MC by Onsemi is a N-CHANNEL FET with 120V DS breakdown voltage, 0.006 ohm max RDS(on), and 150 °C max operating temp. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,896 parts In-Stock

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Digiode

USA . 984 parts In-Stock

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Problanco Electronics

Mexico . 7,387 parts In-Stock

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SupplyDigital Components

Austria . 2,414 parts In-Stock

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TANS Electronics

Latvia . 1,212 parts In-Stock

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Corphita

USA . 864 parts In-Stock

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Kulean Microsystems

USA . 612 parts In-Stock

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UHIMA Technologies

Türkiye . 493 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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Overview

Discover the power of the NTMFS006N12MC by Onsemi, a high-quality N-channel small signal field effect transistor with a built-in diode. Perfect for switching applications, this transistor offers exceptional performance and reliability. With a minimum DS breakdown voltage of 120V and a maximum operating temperature of 150 °C, this enhancement mode transistor delivers superior functionality in a compact package. Trust Onsemi's expertise in semiconductor technology to provide you with the best solution for your electronic needs. Unleash the potential of your designs with the NTMFS006N12MC!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high electron mobility and fast switching speeds, making this transistor ideal for switching applications.

Minimum DS Breakdown Voltage: 120 V

With a minimum breakdown voltage of 120V, this transistor can handle high voltage applications with ease.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the switching operation, providing improved efficiency in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the transistor can withstand elevated temperatures without performance degradation.

Maximum Drain-Source On Resistance: 0.006 ohm

The low drain-source on resistance of 0.006 ohm minimizes power losses and improves efficiency in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS006N12MC attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

120 V

Maximum Drain-Source On Resistance:

.006 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMFS006N12MC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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