Loading...

NTMFS4122NT1G

Onsemi

NTMFS4122NT1G by Onsemi

NTMFS4122NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 14A Drain Current, and 0.006 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. RECTANGULAR package style with PLASTIC/EPOXY body material and Tin terminal finish.

Median Price

$0.617

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,228 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.493

10k+ parts

$0.440

7,228

-

$0.595

$0.493

$0.440

DigiKey

USA . 7,228 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.740

10k+ parts

-

7,228

-

-

$0.740

-

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.617

10k+ parts

$0.550

6,000

-

-

$0.617

$0.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 435 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

-

10k+ parts

-

435

$0.463

-

-

-

Vyrian

USA . 534 parts In-Stock

1+ parts

$0.487

100+ parts

-

1k+ parts

-

10k+ parts

-

534

$0.487

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,936 parts In-Stock

1+ parts

$0.438

100+ parts

-

1k+ parts

-

10k+ parts

-

1,936

$0.438

-

-

-

Corohmni

South Africa . 314 parts In-Stock

1+ parts

$0.487

100+ parts

-

1k+ parts

-

10k+ parts

-

314

$0.487

-

-

-

Component Stockers USA

USA . 8,950 parts In-Stock

1+ parts

$0.500

100+ parts

$0.470

1k+ parts

$0.420

10k+ parts

-

8,950

$0.500

$0.470

$0.420

-

Perfect Parts

USA . 41,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

41,064

-

-

-

-

Continental Prestige Electronics

USA . 7,228 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.447

10k+ parts

-

7,228

-

-

$0.447

-

TANS Electronics

Latvia . 5,499 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,499

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 4,729 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,729

-

-

-

-

SupplyDigital Components

Austria . 4,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,698

-

-

-

-

Problanco Electronics

Mexico . 2,524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,524

-

-

-

-

Kulean Microsystems

USA . 996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

996

-

-

-

-

UHIMA Technologies

Türkiye . 678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

678

-

-

-

-

GreenTree Electronics

Israel . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Overview

Unlock the power of efficient switching with the Onsemi NTMFS4122NT1G small signal FET. Crafted by a trusted manufacturer, this N-channel transistor offers reliability and quality in a compact package. Ideal for various applications, this single configuration FET boasts a built-in diode for added convenience. Experience enhanced performance with a maximum drain current of 14A and minimum DS breakdown voltage of 30V. Trust in Onsemi to deliver cutting-edge technology that meets your needs. Choose the NTMFS4122NT1G for superior operation and lasting value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have lower ON-resistance and higher mobility, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate the transistor into compact and high-density electronic devices.

Minimum DS Breakdown Voltage: 30 V

The high breakdown voltage allows for operation in a wide range of voltage levels, making it versatile for different applications.

Maximum Drain Current (Abs) (ID): 14 A

With a high maximum drain current, this transistor can handle heavy loads without overheating or failing.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, ensuring stable performance in various conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in demanding environments without compromising performance.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability of connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTMFS4122NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

14 A

Maximum Drain Current (ID):

9.1 A

Maximum Drain-Source On Resistance:

.006 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTMFS4122NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19