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NTQD6866R2G

Onsemi

NTQD6866R2G by Onsemi

NTQD6866R2G by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style, operating at up to 150 °C.

Median Price

$0.256

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 11,244 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.208

10k+ parts

$0.186

11,244

-

$0.251

$0.208

$0.186

Verical

USA . 7,244 parts In-Stock

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$0.260

7,244

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$0.260

Distributors (In-Stock)

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Digiode

USA . 1,902 parts In-Stock

1+ parts

$0.196

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1,902

$0.196

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Vyrian

USA . 2,144 parts In-Stock

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2,144

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Distributors (Availability)

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Corphita

USA . 627 parts In-Stock

1+ parts

$0.185

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627

$0.185

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Corohmni

South Africa . 58 parts In-Stock

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$0.206

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58

$0.206

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Component Stockers USA

USA . 6,770 parts In-Stock

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$0.210

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$0.200

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$0.180

10k+ parts

$0.180

6,770

$0.210

$0.200

$0.180

$0.180

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.309

100+ parts

$2.101

1k+ parts

$1.893

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-

2,500

$2.309

$2.101

$1.893

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AZTECH Wire

Italy . 340 parts In-Stock

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$8.200

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340

$8.200

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Perfect Parts

USA . 39,254 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,535 parts In-Stock

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Continental Prestige Electronics

USA . 11,244 parts In-Stock

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$0.200

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 9,244 parts In-Stock

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SupplyDigital Components

Austria . 8,120 parts In-Stock

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Kulean Microsystems

USA . 6,826 parts In-Stock

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TANS Electronics

Latvia . 5,469 parts In-Stock

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Problanco Electronics

Mexico . 4,437 parts In-Stock

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UHIMA Technologies

Türkiye . 100 parts In-Stock

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Overview

Upgrade your electronics with the NTQD6866R2G by Onsemi! Crafted with precision and quality, this small signal field effect transistor boasts N-CHANNEL polarity, common drain configuration, and 2 elements with a built-in diode. Ideal for switching applications, this enhancement mode transistor offers a maximum drain current of 6.9A and a low drain-source on resistance of 0.032 ohm. With Onsemi's reputation for reliability and innovation, you can trust that this FET will deliver top-notch performance and efficiency for your projects. Embrace superior technology and elevate your designs with the NTQD6866R2G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Great for small signal applications as it provides good insulation and protection for the internal components.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower ON resistance and higher current carrying capacity compared to P-Channel FETs, making them suitable for many applications.

Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Common drain configuration allows for high input impedance and low output impedance, making it ideal for buffering signals. The built-in diode provides protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Ease of installation and space-saving design make this FET suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this FET can handle higher voltages without damage, making it versatile for various applications.

Maximum Drain Current (Abs) (ID): 6.9 A

High maximum drain current allows for handling higher power loads and currents.

Maximum Power Dissipation (Abs): 0.78 W

Efficient power dissipation capability ensures stable and reliable operation even under high load conditions.

Maximum Drain-Source On Resistance: 0.032 ohm

Low ON resistance leads to minimal power loss and efficient performance in switching applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures functionality in various environmental conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTQD6866R2G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

6.9 A

Maximum Drain Current (ID):

4.7 A

Maximum Drain-Source On Resistance:

.032 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

175 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTQD6866R2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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