Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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J111RLRAG
Onsemi
J111RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Featuring a max on resistance of 30Ω, this transistor has a cylindrical package style suitable for various electronic designs.
SINGLE
30 ohm
JUNCTION
5 pF
TO-92
O-PBCY-T3
e1
1
3
DEPLETION MODE
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
N-CHANNEL
.35 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
CHOPPER
SILICON
J111RLRPG
J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.
J112G
J112G by Onsemi is a N-CHANNEL FET with 3 terminals in a ROUND package. Operating in DEPLETION MODE, it has a max power dissipation of 0.4W and max drain-source resistance of 50 ohm. Ideal for CHOPPER applications due to its low feedback capacitance of 5pF and temp rating up to 150 °C.
50 ohm
.4 W
J112RL1G
J112RL1G by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max drain-source resistance of 50 ohm. Its cylindrical package body is made of plastic/epoxy material.
EUROPEAN PART NUMBER
J112RLRAG
J112RLRAG by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for chopper applications, it operates in depletion mode with max temp of 150 °C. Featuring a max drain-source resistance of 50 ohm, this transistor has a cylindrical package shape.
MMDF2P02HDR2G
MMDF2P02HDR2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.3A Drain Current. Ideal for SWITCHING applications, it features a RECTANGULAR package, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 2W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
LOGIC LEVEL COMPATIBLE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.3 A
.16 ohm
METAL-OXIDE SEMICONDUCTOR
232 pF
R-PDSO-G8
e3
2
8
ENHANCEMENT MODE
-55 Cel
RECTANGULAR
SMALL OUTLINE
P-CHANNEL
2 W
YES
Tin (Sn)
GULL WING
DUAL
40
SWITCHING
MMDF3N04HDR2G
MMDF3N04HDR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage and 3.4A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. This small outline transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
40 V
3.4 A
.08 ohm
96 pF
FET General Purpose Power
MPF4392G
MPF4392G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 60 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. With a max power dissipation of 0.625W and operating temperature of 150 °C, it is ideal for DEPLETION MODE operation in various electronic circuits.
30 V
60 ohm
3.5 pF
.625 W
Tin/Silver/Copper (Sn/Ag/Cu)
MPF4393G
The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.
100 ohm
NTMS3P03R2G
NTMS3P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.86A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a peak reflow temp of 260 °C and small outline package style, it offers high performance in various electronic devices.
AVALANCHE RATED
SINGLE WITH BUILT-IN DIODE
3.86 A
2.34 A
.085 ohm
135 pF
.73 W
NTMS4503NR2G
NTMS4503NR2G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 9A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at up to 150 °C, it features a built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology.
28 V
9 A
.008 ohm
2.5 W
NTMS4700NR2G
NTMS4700NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.6A ID. Ideal for SWITCHING applications, it features 0.01 ohm RDS(on) and operates in ENHANCEMENT MODE. This GULL WING package has 8 terminals and can withstand peak reflow at 260 °C.
8.6 A
.01 ohm
TIN
NTMS4N01R2G
NTMS4N01R2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5.9A, 0.04ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and PLASTIC/EPOXY body material, it offers high performance in small outline packages.
5.9 A
.04 ohm
100 pF
.77 W
NTMSD3P102R2G
NTMSD3P102R2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.34A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has 0.085 ohm On Resistance and 135pF Feedback Capacitance.
NTMSD3P303R2G
NTMSD3P303R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.34A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and a RECTANGULAR package shape, it offers high performance in small outline designs at up to 150 °C operating temperature.
NUD3048MT1G
NUD3048MT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a built-in diode and resistor, operates in enhancement mode, and has a max drain current of 1.2A. With surface mount capability and small outline package style, it offers high performance in compact designs.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
100 V
1.2 A
.82 ohm
R-PDSO-G6
6
1.56 W
30
NUD3105DMT1G
NUD3105DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 6V breakdown voltage, 0.5A drain current, and 1.3 ohm on resistance. Ideal for surface mount designs in small outline packages at temperatures up to 150°C.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
6 V
.5 A
1.3 ohm
Matte Tin (Sn) - annealed
VN2410LZL1G
VN2410LZL1G by Onsemi is a N-CHANNEL FET with 240V DS breakdown voltage, 0.2A drain current, and 10 ohm on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a cylindrical package suitable for through-hole mounting.
240 V
.2 A
10 ohm
20 pF
NTA4153NT1
NTA4153NT1 by Onsemi is a small signal FET with N-CHANNEL polarity. It features a built-in diode and resistor, ideal for switching applications. With a max drain current of 0.915A and operating temperature of 150 °C, it offers efficient performance in a compact rectangular package.
.915 A
.23 ohm
R-PDSO-G3
e0
235
.3 W
TIN LEAD
NTA7002NT1
NTA7002NT1 by Onsemi is a small signal FET with N-channel polarity. It features a built-in diode and resistor, suitable for switching applications. With a max drain current of 0.154A and operating temperature up to 150 °C, it offers reliable performance in various electronic circuits.
.154 A
7.5 ohm
6 pF
NTGD1100LT1G
NTGD1100LT1G by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 3.3A, on-resistance of 0.14 ohm, and breakdown voltage of 8V. The package is surface mountable with Gull Wing terminals in a rectangular shape, operating at up to 150°C.
COMPLEX
8 V
.14 ohm
N-CHANNEL AND P-CHANNEL
.83 W
NTGD1100LT1
NTGD1100LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It features 8V DS Breakdown Voltage, 3.3A Drain Current, and 0.14ohm On Resistance. With Gull Wing terminals and a max temp of 150 °C, it's ideal for compact electronic designs requiring efficient power management.
NTJD1155LT1
NTJD1155LT1 by Onsemi is a Small Signal FET with N/P-Channel, used for switching applications. It has a max drain current of 1.3A, on-resistance of 0.175 ohm, and operates at up to 150°C. The package is a small outline with Gull Wing terminals, made of metal-oxide semiconductor technology.
1.3 A
.175 ohm
Tin/Lead (Sn/Pb)
NTS4101PT1
NTS4101PT1 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 1.37A max drain current, and 0.12 ohm max on-resistance. With a small outline package and GULL WING terminals, it operates in enhancement mode up to 150 °C.
1.37 A
.12 ohm
85 pF
NOT SPECIFIED
.329 W
Tin/Lead (Sn80Pb20)
NTZD3152PT5G
NTZD3152PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.43A ID, and 0.9 ohm RDS(ON). It is used for SWITCHING applications in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 2 elements with built-in diode and operates in METAL-OXIDE SEMICONDUCTOR technology.
ESD PROTECTION, LOW THRESHOLD
.43 A
.9 ohm
R-PDSO-F6
FLAT
NTZD3155CT5G
NTZD3155CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 0.54A max drain current, and 0.55 ohm max on resistance. Ideal for surface mount designs in various electronic systems.
.54 A
.55 ohm
.25 W
NTZS3151PT5G
NTZS3151PT5G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 0.86A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package. Operating in ENHANCEMENT MODE, this MOSFET has 0.15 ohm Drain-Source On Resistance for efficient performance.
.86 A
.15 ohm
NTMFS4C05NT1G-001
NTMFS4C05NT1G-001 by Onsemi is a N-channel FET with 78A max drain current and 33W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations in various electronic devices.
78 A
33 W
NTMFS4C06NT1G-001
NTMFS4C06NT1G-001 by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates up to 150 °C, making it suitable for various surface-mount designs.
69 A
30.5 W
NTMFS4C08NT1G-001
NTMFS4C08NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount designs, this MOSFET offers reliable performance in various electronic circuits.
52 A
25.5 W
NTMFS4C10NT1G-001
NTMFS4C10NT1G-001 by Onsemi is a N-CHANNEL FET with 46A max drain current and 23.6W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various surface-mount designs.
46 A
23.6 W
SFT1341-TL-W
The Onsemi SFT1341-TL-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.
10 A
e6
15 W
TIN BISMUTH
SFT1341-W
The Onsemi SFT1341-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, such as power management circuits or motor control systems.
Tin/Bismuth (Sn/Bi)
SFT1342-TL-W
The Onsemi SFT1342-TL-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-power handling in compact designs.
12 A
SFT1342-W
The Onsemi SFT1342-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for applications requiring high power handling in temperatures up to 150°C, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
NTMS4107NR2G
NTMS4107NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 15A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0045 ohm.
15 A
11 A
.0045 ohm
NTJS4160NT1G
NTJS4160NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1.8A and 0.06 ohm RDS(ON), in a small outline package with GULL WING terminals for surface mount assembly.
1.8 A
.06 ohm
NTMD6P02R2SG
NTMD6P02R2SG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 6.2A Drain Current, and 0.033 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
6.2 A
4.8 A
.033 ohm
450 pF
NTMS4705NR2G
NTMS4705NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 10A Drain Current, and 0.01 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates up to 150 °C.
7.4 A
1.52 W
NTMS4706NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
6.4 A
.012 ohm
NTGS3441PT1G
NTGS3441PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 1.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.11 ohm on resistance, and operates in enhancement mode. This small outline transistor has 6 terminals and GULL WING form factor for surface mount assembly.
.11 ohm
NTMSD3P102R2SG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
NTVS3141PT2G
NTVS3141PT2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.7A and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR GRID ARRAY package has 6 terminals with BALL form, suitable for surface mount designs.
3.7 A
2.9 A
.2 ohm
R-PBGA-B6
GRID ARRAY
1.5 W
MATTE TIN
BALL
NTMS4840NR2G
NTMS4840NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.5A ID. Ideal for SWITCHING applications, it features 0.024 ohm RDS(ON) and a built-in DIODE in a GULL WING package style.
DRAIN
5.5 A
.024 ohm
FDS8449-F085
FDS8449-F085 by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage and 7.6A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can withstand temperatures up to 150°C.
7.6 A
.029 ohm
e4
NICKEL PALLADIUM GOLD SILVER
FDG6301N-F085
FDG6301N-F085 by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It features a max drain current of 0.22A, operating at an enhancement mode with a breakdown voltage of 25V. With a small outline package style and peak reflow temperature of 260°C, it offers efficient performance in various electronic devices.
25 V
.22 A
4 ohm
FDS9431A-F085
FDS9431A-F085 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 3.5A Drain Current, and 0.13 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This RECTANGULAR package features GULL WING terminals and is suitable for surface mount installations.
3.5 A
.13 ohm
FDS4435BZ-F085
FDS4435BZ-F085 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 8.8A Drain Current, ideal for SWITCHING applications. It features a RECTANGULAR package shape, GULL WING terminals, and operates in ENHANCEMENT MODE at up to 150°C. With 0.02 ohm On Resistance and 345pF Feedback Capacitance, it offers efficient performance in various electronic circuits.
8.8 A
.02 ohm
345 pF
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