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NTA4153NT1

Onsemi

NTA4153NT1 by Onsemi

NTA4153NT1 by Onsemi is a small signal FET with N-CHANNEL polarity. It features a built-in diode and resistor, ideal for switching applications. With a max drain current of 0.915A and operating temperature of 150 °C, it offers efficient performance in a compact rectangular package.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

3,500

-

$0.079

$0.066

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,140 parts In-Stock

1+ parts

$0.062

100+ parts

-

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1,140

$0.062

-

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Chip Stock

USA . 327,500 parts In-Stock

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327,500

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Vyrian

USA . 8,217 parts In-Stock

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8,217

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 442 parts In-Stock

1+ parts

$0.058

100+ parts

-

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442

$0.058

-

-

-

Corohmni

South Africa . 143 parts In-Stock

1+ parts

$0.065

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-

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143

$0.065

-

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-

AZTECH Wire

Italy . 794 parts In-Stock

1+ parts

$11.350

100+ parts

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794

$11.350

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Assy Fe

Spain . 12,000 parts In-Stock

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12,000

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Problanco Electronics

Mexico . 7,158 parts In-Stock

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7,158

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SupplyDigital Components

Austria . 3,069 parts In-Stock

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3,069

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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TANS Electronics

Latvia . 1,855 parts In-Stock

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1,855

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Perfect Parts

USA . 952 parts In-Stock

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952

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UHIMA Technologies

Türkiye . 593 parts In-Stock

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593

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Futuretech Components

Singapore . 512 parts In-Stock

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512

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Kulean Microsystems

USA . 305 parts In-Stock

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305

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Overview

Discover the power of the NTA4153NT1 by Onsemi, a top-tier manufacturer known for delivering high-quality Small Signal Field Effect Transistors. With its N-CHANNEL configuration, built-in diode and resistor, this transistor is perfect for switching applications. Its compact design, maximum drain current of 0.915 A, and low on-resistance of 0.23 ohm make it a versatile choice for various electronic projects. Trust in Onsemi's expertise and elevate your designs with the value and reliability of the NTA4153NT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and durability, making the transistor suitable for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have better performance and lower resistance compared to P-channel FETs, making this transistor a good choice for efficient switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, making the transistor easier to use in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation, making it ideal for efficient electronic control.

Surface Mount: YES

Surface mounting allows for compact and efficient PCB designs, making this transistor suitable for space-constrained applications.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can withstand higher voltages without breakdown, ensuring reliable operation in demanding conditions.

Maximum Drain Current (Abs) (ID): 0.915 A

With a maximum drain current of 0.915 A, this transistor can handle high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 0.3 W

The low maximum power dissipation of 0.3 W helps prevent overheating and ensures the transistor operates efficiently even under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a dependable choice for electronics applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can operate in high-temperature environments without performance degradation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA4153NT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.915 A

Maximum Drain Current (ID):

.915 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA4153NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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