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NTA4153NT1G

Onsemi

NTA4153NT1G by Onsemi

NTA4153NT1G by Onsemi is a small signal N-channel FET with built-in diode and resistor, ideal for switching applications. It has a min DS breakdown voltage of 20V, max drain current of 0.915A, and max power dissipation of 0.3W. Its surface mount package style and gull wing terminals make it suitable for compact designs.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

44

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 194,559 parts In-Stock

1+ parts

$0.280

100+ parts

$0.106

1k+ parts

$0.069

10k+ parts

$0.047

194,559

$0.280

$0.106

$0.069

$0.047

Distrelec

Netherlands . 117 parts In-Stock

1+ parts

$0.413

100+ parts

$0.283

1k+ parts

$0.152

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117

$0.413

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Future Electronics

Canada . 786,000 parts In-Stock

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Arrow

USA . 288,000 parts In-Stock

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Verical

USA . 288,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 219,000 parts In-Stock

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DigiKey

USA . 130,884 parts In-Stock

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RS (Exports)

UK . 68,300 parts In-Stock

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Master Electronics

USA . 63,000 parts In-Stock

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Chip1Stop

Japan . 18,000 parts In-Stock

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Farnell

UK . 11,156 parts In-Stock

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Avnet

USA . 6,000 parts In-Stock

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Element14

Singapore . 4,254 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,917 parts In-Stock

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TME

Poland . 1,238 parts In-Stock

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$0.056

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Nova Conductors

Japan . 30 parts In-Stock

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Maritex

Poland . 16,949 parts In-Stock

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$0.414

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$0.069

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$0.069

$0.054

IBS Electronics

USA . 8,295,000 parts In-Stock

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NAC Semi

USA . 1,566,000 parts In-Stock

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Chip Stock

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ACDS - Activité Composants Distribution Service

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Rebound Electronics

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Sensible Micro Corp

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Micros

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Partservice

France . 2,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 2,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,975 parts In-Stock

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Netsource Technology, Inc.

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Prism Electronics

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Semi Source

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Ampacity Inc.

Singapore . 111,782 parts In-Stock

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Semicontronic

India . 103,731 parts In-Stock

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Corohmni

South Africa . 156 parts In-Stock

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Component Stockers USA

USA . 991,092 parts In-Stock

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Argo Parts USA

USA . 4,688 parts In-Stock

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Corphita

USA . 2,379 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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Continental Prestige Electronics

USA . 5,011 parts In-Stock

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$0.156

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Aztec Data Supply Inc.

USA . 340 parts In-Stock

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$1.910

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S.R.D Solutions

India . 1,000,000 parts In-Stock

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Perfect Parts

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ChipstoGo Electronic ltd

UK . 294,000 parts In-Stock

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RC Electronics

USA . 145,099 parts In-Stock

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GreenTree Electronics

Israel . 48,000 parts In-Stock

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Eastek

USA . 30,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Latvia . 7,034 parts In-Stock

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Brazil . 6,956 parts In-Stock

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Lucentia Tech

USA . 6,956 parts In-Stock

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Lixinc

USA . 6,807 parts In-Stock

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Mexico . 6,275 parts In-Stock

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Israel . 6,000 parts In-Stock

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UK . 3,796 parts In-Stock

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Singapore . 2,980 parts In-Stock

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iodParts Technologies Inc.

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Overview

Discover the NTA4153NT1G by Onsemi, a high-quality Small Signal Field Effect Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a renowned industry leader, this transistor is designed to meet the needs of various applications, particularly in switching. With its built-in diode and resistor, it simplifies the circuit design process. Its compact size and surface mount capability make installation a breeze. Offering a maximum drain current of 0.915 A and a minimum DS breakdown voltage of 20 V, this product delivers exceptional value and benefits to customers. Choose the NTA4153NT1G for superior quality and enhanced functionality in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer better performance and efficiency compared to P-channel transistors, making this product a good choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, saving time and space.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient performance in switching circuits.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on circuit boards, enhancing overall reliability and performance.

Minimum DS Breakdown Voltage: 20 V

The minimum breakdown voltage ensures reliable operation within specified voltage limits, making this transistor suitable for various voltage requirements.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standard form factor for easy integration into circuit designs.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering onto circuit boards, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation offers high efficiency and performance, making this transistor a reliable choice for enhancing circuit functionality.

Maximum Drain Current (Abs) (ID): 0.915 A

With a high maximum drain current, this transistor can handle higher power requirements in various applications.

No. of Terminals: 3

The three terminals provide necessary connections for proper operation in circuit designs, enhancing versatility and usability.

Maximum Power Dissipation (Abs): 0.3 W

The maximum power dissipation rating ensures reliable operation without overheating, making this transistor a durable and efficient choice.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs, making this transistor ideal for applications with size constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a suitable choice for demanding applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring stable performance in various operating conditions.

Transistor Element Material: SILICON

Silicon material offers superior performance and durability for transistor elements, making this product a reliable choice for long-term use.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable performance in cold environments, making this transistor suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and durable connection, ensuring long-term performance in various applications.

Maximum Drain Current (ID): 0.915 A

With a high maximum drain current rating, this transistor can handle high current loads, making it suitable for a wide range of applications.

Maximum Drain-Source On Resistance: 0.23 ohm

The low drain-source on resistance ensures efficient conduction and minimal power loss, making this transistor ideal for high-performance circuits.

Terminal Position: DUAL

The dual terminal position allows for versatile connectivity options, enhancing compatibility with various circuit layouts and designs.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and reliable connections during manufacturing processes, ensuring product quality.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand high-temperature soldering processes, ensuring reliable connectivity in manufacturing.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA4153NT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.915 A

Maximum Drain Current (ID):

.915 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA4153NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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