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NTA4151PT1

Onsemi

NTA4151PT1 by Onsemi

NTA4151PT1 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.54A Drain Current, and 0.36 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with GULL WING terminals. The transistor operates at up to 150 °C and has a max power dissipation of 0.15W in a SMALL OUTLINE package.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,246 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

1,246

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,352 parts In-Stock

1+ parts

$0.051

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1,352

$0.051

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Chip Stock

USA . 312,722 parts In-Stock

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312,722

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QIE Inc.

USA . 5,747 parts In-Stock

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5,747

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Vyrian

USA . 1,919 parts In-Stock

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1,919

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Distributors (Availability)

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Corphita

USA . 745 parts In-Stock

1+ parts

$0.049

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-

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745

$0.049

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Corohmni

South Africa . 407 parts In-Stock

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$0.054

100+ parts

-

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407

$0.054

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Component Stockers USA

USA . 1,239 parts In-Stock

1+ parts

$0.060

100+ parts

$0.050

1k+ parts

$0.050

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-

1,239

$0.060

$0.050

$0.050

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AZTECH Wire

Italy . 257 parts In-Stock

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$14.130

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257

$14.130

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Kulean Microsystems

USA . 6,859 parts In-Stock

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6,859

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SupplyDigital Components

Austria . 6,734 parts In-Stock

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TANS Electronics

Latvia . 3,454 parts In-Stock

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3,454

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 2,268 parts In-Stock

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Perfect Parts

USA . 1,443 parts In-Stock

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Futuretech Components

Singapore . 512 parts In-Stock

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512

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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217

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Overview

Enhance your electronic devices with the NTA4151PT1 by Onsemi, a top-quality P-CHANNEL Small Signal Field Effect Transistor. Manufactured with precision and expertise, this versatile component is designed for switching applications, offering reliable performance and efficiency. With a built-in diode and high DS breakdown voltage, this transistor ensures optimal functionality in various electronic circuits. Upgrade your projects with the NTA4151PT1 and experience the superior quality and value that Onsemi provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good thermal conductivity and high moisture resistance, ensuring durability and reliability in various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs have lower on-state resistance and better current carrying capacity compared to N-channel FETs, making them suitable for high power efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse current, enhancing overall performance and reliability.

Transistor Application: SWITCHING

Switching FETs are designed for fast switching speeds, making them ideal for applications requiring rapid on/off transitions and efficient power management.

Surface Mount: YES

Surface mount package offers easy and reliable soldering onto PCBs, saving space and making assembly processes more efficient.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V ensures reliable operation and protection against voltage spikes in different circuit configurations.

Maximum Drain Current (Abs): 0.54 A

With a maximum drain current of 0.54A, this FET can handle moderate current loads, making it suitable for a wide range of low to medium power applications.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation of 0.15W ensures efficient operation and prevents overheating, contributing to the overall reliability of the device.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance, low noise, and low distortion characteristics, making the FET suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand high-temperature environments and maintain stable performance under elevated conditions.

Maximum Drain-Source On Resistance: 0.36 ohm

The low drain-source on resistance of 0.36 ohms minimizes power losses and improves efficiency in switching applications, reducing heat generation.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA4151PT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.54 A

Maximum Drain Current (ID):

.76 A

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA4151PT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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