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NTA4001NT1

Onsemi

NTA4001NT1 by Onsemi

NTA4001NT1 by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.238A, and max power dissipation of 0.3W. This enhancement mode transistor has a built-in diode and resistor in a surface-mount package, making it ideal for compact electronic designs.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 85,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.050

85,965

-

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$0.050

Rochester

USA . 83,965 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

83,965

-

$0.053

$0.044

$0.039

Verical

USA . 81,180 parts In-Stock

1+ parts

-

100+ parts

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$0.049

81,180

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-

$0.049

Distributors (In-Stock)

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Digiode

USA . 586 parts In-Stock

1+ parts

$0.041

100+ parts

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586

$0.041

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Vyrian

USA . 1,954 parts In-Stock

1+ parts

$0.043

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1,954

$0.043

-

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Component Electronics Inc.

Canada . 8,560 parts In-Stock

1+ parts

$0.650

100+ parts

$0.490

1k+ parts

$0.430

10k+ parts

-

8,560

$0.650

$0.490

$0.430

-

Chip Stock

USA . 178,500 parts In-Stock

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178,500

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Prism Electronics

USA . 6 parts In-Stock

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6

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Distributors (Availability)

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Corphita

USA . 2,070 parts In-Stock

1+ parts

$0.039

100+ parts

-

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2,070

$0.039

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Corohmni

South Africa . 318 parts In-Stock

1+ parts

$0.043

100+ parts

-

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318

$0.043

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Advanced Electronics

New Zealand . 1,414 parts In-Stock

1+ parts

$1.546

100+ parts

$1.407

1k+ parts

$1.268

10k+ parts

-

1,414

$1.546

$1.407

$1.268

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Continental Prestige Electronics

USA . 85,965 parts In-Stock

1+ parts

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100+ parts

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$0.040

10k+ parts

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85,965

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-

$0.040

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Kulean Microsystems

USA . 5,355 parts In-Stock

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5,355

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Problanco Electronics

Mexico . 5,262 parts In-Stock

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5,262

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Kepictronics

USA . 3,700 parts In-Stock

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3,700

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TANS Electronics

Latvia . 3,310 parts In-Stock

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3,310

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Assy Fe

Spain . 3,194 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 394 parts In-Stock

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394

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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145

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Perfect Parts

USA . 7 parts In-Stock

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7

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Overview

Upgrade your electronic devices with the NTA4001NT1 from Onsemi. Known for their high-quality manufacturing, Onsemi offers a wide range of Small Signal Field Effect Transistors (FET) like this one that are perfect for switching applications. With a built-in diode and resistor, this N-channel transistor provides enhanced performance and reliability. Its compact design and surface mount capability make it easy to integrate into your projects. Trust Onsemi to deliver superior products that will take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics and higher mobility, making them suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplified circuit design with integrated diode and resistor, reducing component count and saving space on the PCB.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast turn-on and turn-off times.

Surface Mount: YES

Allows for easy and space-efficient mounting on the PCB.

Minimum DS Breakdown Voltage: 20 V

Withstands a minimum breakdown voltage of 20V, suitable for low-voltage applications.

Maximum Drain Current (ID): 0.238 A

Capable of handling up to 0.238A of drain current, suitable for low power applications.

Maximum Power Dissipation: 0.3 W

Can dissipate up to 0.3W of power, ensuring reliable operation under specified conditions.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, suitable for high-temperature environments.

Maximum Drain-Source On Resistance: 3.5 ohm

Low drain-source on resistance of 3.5 ohms, minimizing power losses and improving efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA4001NT1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.238 A

Maximum Drain Current (ID):

.238 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

6 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA4001NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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