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NTA4151PT1G

Onsemi

NTA4151PT1G by Onsemi

NTA4151PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.54A ID, and 0.36 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating at 150°C max temp, it features ENHANCEMENT MODE technology and a built-in DIODE.

Median Price

$0.069

Lifecycle Status

Suppliers In-Stock

41

In-Stock Inventory

1k+

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Mouser Electronics

USA . 63,615 parts In-Stock

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$0.260

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$0.139

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$0.090

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$0.055

63,615

$0.260

$0.139

$0.090

$0.055

Newark

USA . 1,036 parts In-Stock

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$0.350

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$0.350

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DigiKey

USA . 78,561 parts In-Stock

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$0.360

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$0.139

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$0.091

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$0.065

78,561

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$0.139

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$0.065

Future Electronics

Canada . 3,174,000 parts In-Stock

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Arrow

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Verical

USA . 237,000 parts In-Stock

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Master Electronics

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Farnell

UK . 61,681 parts In-Stock

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Element14

Singapore . 61,681 parts In-Stock

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RS (Exports)

UK . 57,400 parts In-Stock

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Avnet

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USA . 1,530 parts In-Stock

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Chip1Stop

Japan . 1,080 parts In-Stock

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DF Sales Co.

USA . 2,990 parts In-Stock

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Digiode

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Nova Conductors

Japan . 450 parts In-Stock

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Maritex

Poland . 18,617 parts In-Stock

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IBS Electronics

USA . 5,019,000 parts In-Stock

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NAC Semi

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Vyrian

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Atlantic Semiconductor

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ComSIT USA

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Germany . 2,156 parts In-Stock

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New Tech Sourcing

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QIE Inc.

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Elcom Components

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Connector Distribution Corp

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Semicontronic

India . 112,951 parts In-Stock

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Ampacity Inc.

Singapore . 123,083 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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Corphita

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Aranea Global

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Argo Parts USA

USA . 4,249 parts In-Stock

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Advanced Electronics

New Zealand . 345 parts In-Stock

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$0.426

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Continental Prestige Electronics

USA . 63,047 parts In-Stock

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$0.082

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Aztec Data Supply Inc.

USA . 2,265 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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Futuretech Components

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 132,000 parts In-Stock

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Eastek

USA . 129,000 parts In-Stock

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RC Electronics

USA . 101,036 parts In-Stock

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iodParts Technologies Inc.

India . 8,700 parts In-Stock

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Lixinc

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Mexico . 5,434 parts In-Stock

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Kulean Microsystems

USA . 694 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Overview

Discover the NTA4151PT1G by Onsemi, a high-quality P-Channel Field Effect Transistor designed for switching applications. With a single configuration and built-in diode, this product offers optimal performance and efficiency. Manufactured by Onsemi, a trusted name in semiconductor technology, you can trust in the reliability and durability of this transistor. Ideal for various electronic devices, this FET provides value and benefits to customers looking for superior quality and functionality in their components. Experience seamless operation and enhanced performance with the NTA4151PT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors offer low on-resistance and high current carrying capability, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy and efficient circuit design, saving space and improving overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

The surface mount capability makes it easy to integrate this transistor into compact electronic designs.

Minimum DS Breakdown Voltage: 20 V

With a high breakdown voltage, this transistor can handle higher voltages without damage, ensuring reliability in various operating conditions.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, allowing for easy placement on PCBs with limited space.

Terminal Form: GULL WING

The gull-wing terminals offer secure connections and ease of soldering, ensuring reliable electrical contact.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors provide high input impedance and low leakage current, improving overall circuit performance.

Maximum Drain Current (Abs): 0.54 A

With a high drain current rating, this transistor can handle significant current flow, making it suitable for high-power applications.

No. of Terminals: 3

The three terminals allow for easy connection and circuit integration, simplifying the overall design process.

Maximum Power Dissipation (Abs): 0.15 W

This low power dissipation rating helps to minimize heat generation, ensuring the transistor operates efficiently and reliably.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers space-saving benefits, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high switching speeds, low input capacitance, and low leakage current, enhancing circuit performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and efficiency, making them a popular choice in various electronic applications.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures stable electrical connections, prolonging the lifespan of the transistor.

Maximum Drain Current (ID): 0.76 A

This high drain current rating allows the transistor to handle heavy loads and provide reliable operation in demanding applications.

Maximum Drain-Source On Resistance: 0.36 ohm

The low on-resistance minimizes power loss and heat generation, increasing efficiency and performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and ensures easy connection to other components.

Maximum Time At Peak Reflow Temperature (s): 30

This short reflow time ensures the transistor is not exposed to excessive heat, preventing damage during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for quick and reliable soldering, ensuring secure connections and overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) NTA4151PT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.54 A

Maximum Drain Current (ID):

.76 A

Maximum Drain-Source On Resistance:

.36 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTA4151PT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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