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J111RLRPG

Onsemi

J111RLRPG by Onsemi

J111RLRPG by Onsemi is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 0.35W and a max drain-source on resistance of 30 ohm. Ideal for CHOPPER applications due to its SILICON element material and low feedback capacitance of 5pF.

Median Price

$0.548

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,976 parts In-Stock

1+ parts

-

100+ parts

$0.528

1k+ parts

$0.439

10k+ parts

$0.391

2,976

-

$0.528

$0.439

$0.391

DigiKey

USA . 2,976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.660

10k+ parts

-

2,976

-

-

$0.660

-

Verical

USA . 2,976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.548

10k+ parts

$0.489

2,976

-

-

$0.548

$0.489

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 630 parts In-Stock

1+ parts

$0.411

100+ parts

-

1k+ parts

-

10k+ parts

-

630

$0.411

-

-

-

Vyrian

USA . 4,554 parts In-Stock

1+ parts

-

100+ parts

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4,554

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,635 parts In-Stock

1+ parts

$0.368

100+ parts

-

1k+ parts

-

10k+ parts

-

2,635

$0.368

-

-

-

Corphita

USA . 263 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

-

263

$0.390

-

-

-

Corohmni

South Africa . 211 parts In-Stock

1+ parts

$0.433

100+ parts

-

1k+ parts

-

10k+ parts

-

211

$0.433

-

-

-

Component Stockers USA

USA . 2,978 parts In-Stock

1+ parts

$0.440

100+ parts

$0.420

1k+ parts

$0.380

10k+ parts

-

2,978

$0.440

$0.420

$0.380

-

AZTECH Wire

Italy . 456 parts In-Stock

1+ parts

$21.950

100+ parts

-

1k+ parts

-

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456

$21.950

-

-

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Problanco Electronics

Mexico . 7,973 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,973

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SupplyDigital Components

Austria . 6,774 parts In-Stock

1+ parts

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100+ parts

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6,774

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Kulean Microsystems

USA . 5,873 parts In-Stock

1+ parts

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5,873

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TANS Electronics

Latvia . 4,638 parts In-Stock

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4,638

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Continental Prestige Electronics

USA . 2,976 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.418

10k+ parts

-

2,976

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-

$0.418

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UHIMA Technologies

Türkiye . 288 parts In-Stock

1+ parts

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100+ parts

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288

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Overview

Unleash the power of innovation with the J111RLRPG by Onsemi. Crafted with precision and expertise, this small signal field-effect transistor offers unparalleled performance and reliability. Ideal for chopper applications, this N-channel transistor in a round package provides seamless operation in depletion mode. With a maximum power dissipation of 0.35W, this product is designed to exceed expectations. Embrace the future of technology with the J111RLRPG and experience the difference that quality and excellence can make in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance in terms of speed and efficiency compared to P-channel transistors, making this transistor a good choice for high-performance applications.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly, making this transistor easy to integrate into electronic systems.

Transistor Application: CHOPPER

Chopper application implies that this transistor is designed for switching operations, making it suitable for power control and conversion applications.

Maximum Power Dissipation: 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Maximum Drain-Source On Resistance: 30 ohm

Low on-resistance helps minimize power loss and improve efficiency in the circuit, making this transistor suitable for high-frequency switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) J111RLRPG attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J111RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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