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J111-D26Z

Onsemi

J111-D26Z by Onsemi

J111-D26Z by Onsemi is a N-CHANNEL FET with 3 terminals and 0.4W power dissipation. Ideal for SWITCHING applications, it operates in DEPLETION MODE at up to 150°C. Featuring a max on resistance of 30 ohm, this transistor has a feedback capacitance of 5pF and comes in a CYLINDRICAL package.

Median Price

$0.241

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 16,894 parts In-Stock

1+ parts

$0.360

100+ parts

$0.194

1k+ parts

$0.160

10k+ parts

$0.113

16,894

$0.360

$0.194

$0.160

$0.113

Newark

USA . 8,997 parts In-Stock

1+ parts

$0.541

100+ parts

$0.244

1k+ parts

$0.144

10k+ parts

-

8,997

$0.541

$0.244

$0.144

-

DigiKey

USA . 41,041 parts In-Stock

1+ parts

$0.600

100+ parts

$0.236

1k+ parts

$0.160

10k+ parts

$0.116

41,041

$0.600

$0.236

$0.160

$0.116

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$1.951

100+ parts

$1.775

1k+ parts

$1.600

10k+ parts

-

2,500

$1.951

$1.775

$1.600

-

Farnell

UK . 9,944 parts In-Stock

1+ parts

-

100+ parts

$0.200

1k+ parts

$0.196

10k+ parts

-

9,944

-

$0.200

$0.196

-

Element14

Singapore . 9,944 parts In-Stock

1+ parts

-

100+ parts

$0.282

1k+ parts

$0.277

10k+ parts

-

9,944

-

$0.282

$0.277

-

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.125

6,000

-

-

-

$0.125

Master Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.102

6,000

-

-

-

$0.102

Chip1Stop

Japan . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.109

6,000

-

-

-

$0.109

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

4,000

-

-

-

$0.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,755 parts In-Stock

1+ parts

$0.089

100+ parts

-

1k+ parts

-

10k+ parts

-

2,755

$0.089

-

-

-

Nova Conductors

Japan . 980 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

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980

$0.158

-

-

-

Vyrian

USA . 11,402 parts In-Stock

1+ parts

-

100+ parts

-

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11,402

-

-

-

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Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

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6,000

-

-

-

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IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.144

6,000

-

-

-

$0.144

Anansix

USA . 1,966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,966

-

-

-

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Schukat

Germany . 1,700 parts In-Stock

1+ parts

-

100+ parts

$0.213

1k+ parts

$0.169

10k+ parts

$0.140

1,700

-

$0.213

$0.169

$0.140

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 40,253 parts In-Stock

1+ parts

$0.080

100+ parts

-

1k+ parts

-

10k+ parts

-

40,253

$0.080

-

-

-

Corphita

USA . 2,339 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

-

2,339

$0.085

-

-

-

Corohmni

South Africa . 500 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.090

-

-

-

Bastille Electronics

Australia . 800 parts In-Stock

1+ parts

$0.158

100+ parts

$0.150

1k+ parts

$0.143

10k+ parts

$0.141

800

$0.158

$0.150

$0.143

$0.141

Continental Prestige Electronics

USA . 17,861 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

$0.155

17,861

$0.158

-

-

$0.155

Argo Parts USA

USA . 8,555 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

-

10k+ parts

$0.153

8,555

$0.158

-

-

$0.153

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.158

100+ parts

-

1k+ parts

$0.150

10k+ parts

$0.147

500

$0.158

-

$0.150

$0.147

Kulean Microsystems

USA . 8,162 parts In-Stock

1+ parts

-

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8,162

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Kepictronics

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 6,440 parts In-Stock

1+ parts

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6,440

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TANS Electronics

Latvia . 2,943 parts In-Stock

1+ parts

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2,943

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SupplyDigital Components

Austria . 2,500 parts In-Stock

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2,500

-

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Glotronic Ltd.

UK . 1,740 parts In-Stock

1+ parts

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1,740

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-

-

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Alle Elektronik GmbH

Germany . 1,706 parts In-Stock

1+ parts

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1,706

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Supply Digital

USA . 515 parts In-Stock

1+ parts

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515

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UHIMA Technologies

Türkiye . 447 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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447

-

-

-

-

Overview

The J111-D26Z by Onsemi is a top-of-the-line Small Signal Field Effect Transistor (FET) that offers unparalleled quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor is ideal for switching applications. With its high performance and low power dissipation, it provides exceptional value to customers looking for a dependable solution. Whether you're building electronics or working on a project that requires efficient power management, the J111-D26Z is sure to exceed your expectations. Experience the advantages of Onsemi's cutting-edge technology with this versatile and advanced field effect transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better mobility and conductivity, making them suitable for high performance switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and efficient performance.

Package Shape: ROUND

The round shape of the package allows for easy mounting and handling during installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, reducing the risk of solder joint failure in rugged environments.

Operating Mode: DEPLETION MODE

Depletion mode transistors are normally closed, providing a fail-safe operation in case of signal loss or power failure.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, this transistor can handle moderate power levels without overheating.

Package Style: CYLINDRICAL

The cylindrical package style provides a compact form factor, making it suitable for space-constrained applications.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers lower on-state resistance and improved efficiency compared to other types of FETs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability, low leakage current, and good thermal stability for long-term performance.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability, ensuring reliable electrical connections during assembly.

Maximum Drain-Source On Resistance: 30 ohm

With a low on-resistance of 30 ohms, this transistor minimizes power loss and enhances efficiency in switch-mode applications.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and solder the transistor onto a PCB, simplifying the assembly process.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance helps reduce signal distortion and improves high-frequency response in amplifier and switching circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) J111-D26Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

J111-D26Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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