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J111RL1

Onsemi

J111RL1 by Onsemi

J111RL1 by Onsemi is a N-CHANNEL FET with 3 terminals and 0.35W power dissipation. Ideal for chopper applications, it operates in depletion mode at up to 150 °C. Featuring a max drain-source resistance of 30Ω, this transistor has a cylindrical package body suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 852 parts In-Stock

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Vyrian

USA . 741 parts In-Stock

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741

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Ampacity Inc.

Singapore . 1,122 parts In-Stock

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$37.050

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Problanco Electronics

Mexico . 7,045 parts In-Stock

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TANS Electronics

Latvia . 5,080 parts In-Stock

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SupplyDigital Components

Austria . 4,073 parts In-Stock

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Kulean Microsystems

USA . 3,708 parts In-Stock

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UHIMA Technologies

Türkiye . 953 parts In-Stock

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953

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Corphita

USA . 155 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Overview

Upgrade your electronic projects with the J111RL1 by Onsemi, a top-quality Small Signal Field Effect Transistor that delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this N-CHANNEL transistor is perfect for chopper applications. With its impressive power dissipation of 0.35W and low drain-source resistance of 30 ohms, this transistor ensures efficient operation. Whether you're a hobbyist or a professional, the J111RL1 offers unbeatable value and benefits, making it a must-have component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow in the transistor, enhancing its performance.

Configuration: SINGLE

Simplifies the circuit design and makes the transistor easy to use.

Transistor Application: CHOPPER

Designed for chopper applications, ensuring optimal performance in such specific functions.

Package Shape: ROUND

Facilitates easy installation and allows for compact circuit design.

Terminal Form: THROUGH-HOLE

Enables secure soldering connections and easy integration into a circuit board.

Operating Mode: DEPLETION MODE

Offers precise control over the transistor's behavior, enhancing its efficiency.

No. of Terminals: 3

Provides the necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.35 W

Can handle moderate power levels, making it suitable for various low-power applications.

Package Style (Meter): CYLINDRICAL

Offers a unique design that may be beneficial for certain applications or space constraints.

Field Effect Transistor Technology: JUNCTION

Utilizes junction technology, known for its reliability and efficiency in transistor operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring stability and performance in various environments.

Transistor Element Material: SILICON

Silicon is a common material known for its semiconductor properties, ensuring reliable transistor operation.

Terminal Finish: TIN LEAD

Provides a reliable and corrosion-resistant finish for the terminals, enhancing the transistor's lifespan.

Maximum Drain-Source On Resistance: 30 ohm

Allows for efficient current flow and minimal power loss in the transistor.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering of the transistor in a circuit.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during the soldering process, ensuring secure connections.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance reduces the risk of signal interference, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) J111RL1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J111RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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