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MPF4393G

Onsemi

MPF4393G by Onsemi

The Onsemi MPF4393G is a N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 100 ohm Drain-Source On Resistance, and 3.5pF Feedback Capacitance. This SINGLE configuration transistor operates in DEPLETION MODE with a max power dissipation of 0.625W at 150 °C.

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1k+

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Vyrian

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Digiode

USA . 1,955 parts In-Stock

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Florida Circuit

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AZTECH Wire

Italy . 441 parts In-Stock

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Component Stockers USA

USA . 632 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 8,361 parts In-Stock

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Kulean Microsystems

USA . 7,348 parts In-Stock

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Problanco Electronics

Mexico . 4,872 parts In-Stock

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SupplyDigital Components

Austria . 4,610 parts In-Stock

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Corphita

USA . 2,334 parts In-Stock

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UHIMA Technologies

Türkiye . 464 parts In-Stock

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Corohmni

South Africa . 442 parts In-Stock

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Overview

Enhance your electronic projects with the MPF4393G by Onsemi, a high-quality Small Signal Field Effect Transistor that provides superior performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this N-CHANNEL transistor is ideal for switching applications, offering efficient power management and precise control. Whether you're a hobbyist or a professional, this transistor's dependable operation, low on-resistance, and wide temperature range make it a valuable addition to any circuit design. Upgrade your projects with the MPF4393G and experience the difference in quality and efficiency today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material provides protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, making this product a good choice for switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and allows for easier integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle higher voltage levels without failure.

Package Shape: ROUND

The round package shape is space-efficient and easy to mount, making it suitable for compact electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during PCB assembly.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for current flow when no voltage is applied to the gate, offering flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle power efficiently without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and robust design, suitable for various electronic applications.

Field Effect Transistor Technology: JUNCTION

Junction technology offers high performance and reliability, ensuring the transistor's stability in demanding conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without performance degradation.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high efficiency and reliability in electronic devices.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The tin, silver, and copper terminal finish ensures excellent conductivity and corrosion resistance, improving the transistor's longevity.

Maximum Drain-Source On Resistance: 100 ohm

With a low on-resistance of 100 ohms, this transistor minimizes power losses and heat generation during operation.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and mounting, enhancing the ease of use and installation of this transistor.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for up to 40 seconds, making it suitable for reflow soldering processes in manufacturing.

Peak Reflow Temperature °C: 260

Capable of withstanding peak reflow temperatures of 260 °C, ensuring reliable soldering and assembly processes.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance of 3.5 pF minimizes signal distortion, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4393G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4393G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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