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MPF4392RLRM

Onsemi

MPF4392RLRM by Onsemi

MPF4392RLRM by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a DEPLETION MODE and 60 ohm Drain-Source On Resistance. The transistor has 3 terminals, ROUND package shape, and 3.5 pF Feedback Capacitance (Crss).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,299 parts In-Stock

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Digiode

USA . 1,029 parts In-Stock

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SupplyDigital Components

Austria . 8,065 parts In-Stock

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TANS Electronics

Latvia . 6,468 parts In-Stock

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Problanco Electronics

Mexico . 5,637 parts In-Stock

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Kulean Microsystems

USA . 4,402 parts In-Stock

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Corphita

USA . 614 parts In-Stock

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UHIMA Technologies

Türkiye . 503 parts In-Stock

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Corohmni

South Africa . 422 parts In-Stock

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Overview

Upgrade your electronic projects with the MPF4392RLRM Small Signal Field Effect Transistor by Onsemi. Known for their high-quality components, Onsemi delivers reliability and performance. This N-CHANNEL transistor is perfect for switching applications, providing a minimum DS Breakdown Voltage of 30V and a maximum Drain-Source On Resistance of 60 ohms. With its DEPLETION MODE operating mode and durable PLASTIC/EPOXY package body material, this transistor offers value and efficiency to every customer. Enhance your designs with the MPF4392RLRM and experience the difference that Onsemi quality brings.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good insulation and protection for the transistor, making it more durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance and higher efficiency compared to P-channel transistors, making them a good choice for many applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and reduces complexity, making it easier to implement this transistor in various projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it suitable for use in power electronics and other applications that require rapid switching.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle higher voltage levels, providing a wider range of applications and increasing versatility.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making it convenient to integrate this transistor into various electronic devices or circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, making it easier to solder and secure the transistor in place during assembly.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer precise control over current flow, allowing for efficient switching operation and improved performance in specific applications.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options and can be easily integrated into different circuit configurations for various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, making it ideal for applications where size constraints are a concern.

Field Effect Transistor Technology: JUNCTION

Junction FET technology provides high performance and reliability, making this transistor a suitable choice for demanding applications where precision and efficiency are critical.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors, offering good thermal stability and high electron mobility, which helps enhance the overall performance and reliability of this transistor.

Terminal Finish: TIN LEAD

Tin-lead terminal finish allows for easy soldering and secure connections, ensuring reliable performance and durability in various operating conditions.

Maximum Drain-Source On Resistance: 60 ohm

With a low on-resistance of 60 ohms, this transistor minimizes power loss and heat generation, making it energy-efficient and suitable for high-performance applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier PCB layout and soldering, providing a more efficient and reliable connection for integrating this transistor into electronic circuits.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance of 3.5 pF helps minimize signal distortion and improve high-frequency performance, making this transistor a good choice for applications requiring fast response times and high bandwidth.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4392RLRM attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4392RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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