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MPF4856

Onsemi

MPF4856 by Onsemi

The Onsemi MPF4856 is a N-CHANNEL FET for SWITCHING applications. It features a 40V DS Breakdown Voltage, 25 ohm Drain-Source Resistance, and 8pF Feedback Capacitance. This PLASTIC/EPOXY transistor has a ROUND package with THROUGH-HOLE terminals in DEPLETION MODE operation.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 1,402 parts In-Stock

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Digiode

USA . 921 parts In-Stock

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Electronic Expediters

USA . 250 parts In-Stock

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TANS Electronics

Latvia . 4,585 parts In-Stock

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SupplyDigital Components

Austria . 3,820 parts In-Stock

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Kulean Microsystems

USA . 2,982 parts In-Stock

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Corphita

USA . 1,138 parts In-Stock

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Problanco Electronics

Mexico . 853 parts In-Stock

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UHIMA Technologies

Türkiye . 645 parts In-Stock

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Corohmni

South Africa . 79 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MPF4856 by Onsemi. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled quality and reliability. Ideal for switching applications, this N-channel transistor provides smooth and efficient performance. With a minimum DS breakdown voltage of 40V and maximum drain-source on resistance of 25 ohm, this transistor delivers superior functionality. Trust in Onsemi's reputation for excellence and choose the MPF4856 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and resistant to environmental factors, making it suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer faster switching speeds and lower on-resistance compared to P-channel transistors, making them ideal for high-performance applications.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easier integration into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides high efficiency and fast response times when turning on and off.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this transistor can handle higher voltages without risking damage, ensuring reliable performance in a wide range of operating conditions.

Package Shape: ROUND

The round package shape allows for easy mounting and better heat dissipation, making it suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the assembly process and provides strong mechanical support, enhancing the reliability of the transistor in various applications.

Operating Mode: DEPLETION MODE

Depletion mode transistors are normally on unless a voltage signal is applied, making them suitable for applications where a default closed state is desired.

No. of Terminals: 3

Having 3 terminals allows for easy connection in standard circuit configurations, providing versatility in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides robust protection for the transistor elements and allows for efficient heat dissipation, ensuring reliable performance in various environmental conditions.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance and low noise performance, making it ideal for high-frequency applications and low-power circuits.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, temperature stability, and low leakage current, making them suitable for a wide range of applications requiring precise electrical characteristics.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and ensures a reliable electrical connection, making it easier to integrate this transistor into various electronic systems.

Maximum Drain-Source On Resistance: 25 ohm

With a low on-resistance of 25 ohms, this transistor minimizes power loss and heat generation, improving efficiency in switching applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and efficient heat dissipation, enhancing the overall performance and reliability of the transistor.

Maximum Feedback Capacitance (Crss): 8 pF

The low feedback capacitance of 8pF reduces the risk of parasitic oscillations and improves stability in high-frequency applications, ensuring reliable performance in demanding circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4856 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain-Source On Resistance:

25 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

8 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4856 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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