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MPF4392RLRE

Onsemi

MPF4392RLRE by Onsemi

MPF4392RLRE by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a DEPLETION MODE, it has a low 60 ohm Drain-Source On Resistance and 3.5 pF Feedback Capacitance. This THROUGH-HOLE transistor in CYLINDRICAL package is made of SILICON for efficient performance.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,744 parts In-Stock

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Digiode

USA . 955 parts In-Stock

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SupplyDigital Components

Austria . 8,149 parts In-Stock

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TANS Electronics

Latvia . 7,434 parts In-Stock

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Problanco Electronics

Mexico . 4,947 parts In-Stock

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Kulean Microsystems

USA . 3,681 parts In-Stock

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Corphita

USA . 2,318 parts In-Stock

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UHIMA Technologies

Türkiye . 642 parts In-Stock

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Discover the versatility and reliability of the MPF4392RLRE by Onsemi, a top-tier manufacturer renowned for its high-quality components. As part of the Small Signal Field Effect Transistors category, this N-CHANNEL transistor offers exceptional performance in switching applications. With a minimum DS breakdown voltage of 30 V and a maximum drain-source on resistance of 60 ohms, this transistor is a powerhouse in efficiency and functionality. Whether you're looking to enhance your electronic projects or streamline your systems, the MPF4392RLRE provides unbeatable value, benefits, and advantages that will elevate your creations to new heights. Choose Onsemi for top-of-the-line components that deliver excellence every time!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the transistor lightweight and durable, ideal for compact electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and higher mobility, making them efficient for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance in on/off operations.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage levels safely.

Package Shape: ROUND

Round package shape allows for easier mounting and integration in circular or space-constrained designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals make soldering and connections easy, ensuring a secure and reliable connection.

Operating Mode: DEPLETION MODE

Depletion mode operation provides versatility in circuit design and flexibility in controlling the transistor.

No. of Terminals: 3

Three terminals offer standard connections for easy integration into existing circuit layouts.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact form factor suitable for space-saving applications.

Field Effect Transistor Technology: JUNCTION

Junction technology enhances the transistor's performance and efficiency in handling signals.

Transistor Element Material: SILICON

Silicon material ensures reliability, stability, and high performance in various operating conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides a reliable and solderable surface for easy installation and connectivity.

Maximum Drain-Source On Resistance: 60 ohm

Low on-resistance of 60 ohms ensures efficient power delivery and minimal power loss.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and efficient heat dissipation.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance of 3.5 pF ensures improved stability and reduced signal distortion.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4392RLRE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

60 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4392RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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