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MPF4393ZL1

Onsemi

MPF4393ZL1 by Onsemi

MPF4393ZL1 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring DEPLETION MODE operation, it has a low 100 ohm RDS(on) and 3.5 pF Crss for efficient performance in various electronic circuits. Packaged in PLASTIC/EPOXY material, it offers reliable THROUGH-HOLE mounting in a CYLINDRICAL shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,983 parts In-Stock

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Digiode

USA . 1,456 parts In-Stock

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TANS Electronics

Latvia . 6,901 parts In-Stock

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Problanco Electronics

Mexico . 2,268 parts In-Stock

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Kulean Microsystems

USA . 2,197 parts In-Stock

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SupplyDigital Components

Austria . 1,815 parts In-Stock

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UHIMA Technologies

Türkiye . 794 parts In-Stock

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Corphita

USA . 585 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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Overview

Elevate your electronic designs with the MPF4393ZL1 by Onsemi. Crafted with precision and expertise, this N-CHANNEL Small Signal Field Effect Transistor offers unparalleled quality and reliability. Ideal for switching applications, this transistor provides seamless performance and efficiency. With its low drain-source resistance and high breakdown voltage, the MPF4393ZL1 ensures superior functionality in a compact package. Trust Onsemi to deliver cutting-edge technology that empowers your creations to reach new heights. Experience the difference with the MPF4393ZL1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the transistor lightweight and durable for easy installation and long-term use.

Polarity or Channel Type: N-CHANNEL

N-Channel type FETs typically have better performance in terms of conduction and switching characteristics compared to P-Channel FETs.

Configuration: SINGLE

Single configuration FETs are easier to design circuits with and are typically more reliable compared to multiple configuration FETs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in electronic circuits.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltage applications without risk of damage.

Package Shape: ROUND

Round package shape allows for easy mounting and soldering on circuit boards, saving space and making installation simpler.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection to the circuit board, ensuring stability and reliability in operation.

Operating Mode: DEPLETION MODE

Depletion mode FETs offer precise control over the current flow, making them suitable for a wide range of circuit applications.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit design and integration, offering multiple connection points for various applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and efficient form factor for easy integration into electronic devices.

Field Effect Transistor Technology: JUNCTION

Junction technology offers improved performance and reliability compared to other FET technologies, making this transistor a solid choice.

Transistor Element Material: SILICON

Silicon material ensures high conductivity and low power loss, making this FET an efficient choice for electronic circuits.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals provides good solderability and resistance to corrosion, ensuring a reliable electrical connection.

Maximum Drain-Source On Resistance: 100 ohm

Low on-resistance ensures minimal power loss and heat generation during operation, making this FET energy-efficient.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting on the circuit board and facilitates efficient heat dissipation.

Maximum Feedback Capacitance (Crss): 3.5 pF

Low feedback capacitance minimizes signal loss and distortion in high-frequency applications, making this FET suitable for demanding circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) MPF4393ZL1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3.5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPF4393ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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